Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
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BackgroundExperimentalModelingSummaryMethodologySingle-bit<strong>Multiple</strong>-bit<strong>Multiple</strong>-bit probability depends on orient<strong>at</strong>ion90°45°0°Preferential direction from spacing and nuclear productsAlan Douglas TiptonNASA Review15
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