Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
Increased Rate of Multiple-Bit Upset at Large Angles of Incidence
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Modeling methodologyTI 90 nm SRAM modelSensitive nodeCharge collectionvolumeTechnology ComputerAided Design (TCAD)ModelSimul<strong>at</strong>ion - MRED(Monte-Carlo Radi<strong>at</strong>iveEnergy Deposition) CodeSingle bit<strong>Multiple</strong> bitBackgroundExperimentalModelingSummaryMethodologySingle-bit<strong>Multiple</strong>-bitNeutronSpectrumSensitiveNodeSBUTCADMREDMetalliz<strong>at</strong>ionMBUAlan Douglas TiptonNASA Review9
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