Quality Assurance - Index of

CUSTOM SOLUTIONS............. I ......! .....'''''''''.;I;;,.. ... .Application Gate·· ... Interconnect PitchesI H'-> ............ ........ Voltage BVDSS Length Poly 1 Metal 1 Metal· 2 FeaturesCG Si-Gate, dual metal, 5V 7V 1.511 3.011 4.511 6.011 • DDD SID structuredual poly, PWell• Poly-poly capacitors• Shrinkable to 1.211CJ Si-Gate, dual metal, 5V 7V 1.011 2.011 3.011 3.311 • Ldd SID structuredual poly, NWell• Poly-poly capacitors• Shrinkable to O.SI1ICK Si-Gate, dual metal, 5V 7V O.SI1 1.611 2.011 2.411 • Ldd SID structuredual poly, NWell• Poly-poly capacitors• Shrinkable to 0.511• High voltage FETs• 15V NPNs.? ...... ....... ..> ..DrawnTABLE 1: CMOS Process Chart··>< A i...........Gate Interconnect Pitches.-~':"~~ .,.< .....••.. lf~. ·tS~U~~ Length Poly IMO M1 M2 BV CEO NPNFt Emitter FeaturesBCA: 5V 10V 1.011 2.611 3.211 3.SI1 5.011 SV 13 GHz 1.011 Bipolar:• High Periormance NPNs• Polysilicon emitters• PtSi Schottky Diodes• Poly resistersBCB: 5V SV O.SI1 1.611 2.411 2.011 2.411 SV 15 GHz O.SI1 • Gate Oxide Capacitors• Poly Capacitors• Sidewall Oxide Isolation• FusesCMOS:• Lightly Doped Drains> ...............TABLE 2: BiCMOS Process ChartEmitter M1 M2t'TOC855. aVD.,>