JANSR2N7389 JANSF2N7389 HEXFET® TRANSISTOR IRHF9130 ...
JANSR2N7389 JANSF2N7389 HEXFET® TRANSISTOR IRHF9130 ...
JANSR2N7389 JANSF2N7389 HEXFET® TRANSISTOR IRHF9130 ...
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REVIEW ONLY<strong>IRHF9130</strong>, IRHF93130, JANSR-, JANSF-, 2N7389 DevicePre-Irradiation-I D , Drain-to-Source Current (A)10010VGSTOP -15V-12V-10V-9.0V-8.0V-7.0V-6.0VBOTTOM -5.0V-5.0V20µs PULSE WIDTHT J = 25 ° C11 10 100-V DS , Drain-to-Source Voltage (V)-I D , Drain-to-Source Current (A)10010VGSTOP -15V-12V-10V-9.0V-8.0V-7.0V-6.0VBOTTOM -5.0V-5.0V20µs PULSE WIDTHT J = 150 ° C11 10 100-V DS , Drain-to-Source Voltage (V)Fig 1. Typical Output CharacteristicsFig 2. Typical Output Characteristics-I D , Drain-to-Source Current (A)10010T J = 25 ° CT J = 150 ° CV DS= -50V20µs PULSE WIDTH15 6 7 8 9 10-V GS , Gate-to-Source Voltage (V)R DS(on) , Drain-to-Source On Resistance(Normalized)2.5I D = -6.5A2.01.51.00.5V GS = -12V0.0-60 -40 -20 0 20 40 60 80 100 120 140 160T J , Junction Temperature( ° C)Fig 3. Typical Transfer CharacteristicsFig 4. Normalized On-ResistanceVs. Temperature4 www.irf.com
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