section 1 - World Intellectual Property Organization
section 1 - World Intellectual Property Organization
section 1 - World Intellectual Property Organization
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12/2002<br />
5770 PCT Gazette - Section I - Gazette du PCT 21 Mar/mar 2002<br />
(30) 2000-282047 18 Sep/sep 2000 JP<br />
(18.09.2000)<br />
(30) 2001-68067 12 Mar/mar 2001 JP<br />
(12.03.2001)<br />
(43) 21 Mar/mar 2002 (21.03.2002)<br />
(54) SEMICONDUCTOR BASE MATERIAL<br />
AND METHOD OF MANUFACTURING<br />
THE MATERIAL<br />
MATERIAU DE BASE SEMI-CONDUC-<br />
TEUR ET PROCEDE DE FABRICATION<br />
DUDIT MATERIAU<br />
(71) MITSUBISHI CABLE INDUSTRIES,<br />
LTD. [JP/JP]; 8, Nishinocho, Higashimukaijima,<br />
Amagasaki-shi, Hyogo 660-0856 (JP).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) OKAGAWA, Hiroaki [JP/JP]; c/o Itami<br />
Factory of MITSUBISHI CABLE INDUS-<br />
TRIES, LTD., 3, Ikejiri 4-chome, Itami-shi,<br />
Hyogo 664-0027 (JP). TADATOMO,<br />
Kazuyuki [JP/JP]; c/o Itami Factory of MIT-<br />
SUBISHI CABLE INDUSTRIES, LTD., 3,<br />
Ikejiri 4-chome, Itami-shi, Hyogo 664-0027<br />
(JP). OUCHI, Yoichiro [JP/JP]; c/o Itami<br />
Factory of MITSUBISHI CABLE INDUS-<br />
TRIES, LTD., 3, Ikejiri 4-chome, Itami-shi,<br />
Hyogo 664-0027 (JP). TSUNEKAWA,<br />
Takashi [JP/JP]; c/o Itami Factory of MIT-<br />
SUBISHI CABLE INDUSTRIES, LTD., 3,<br />
Ikejiri 4-chome, Itami-shi, Hyogo 664-0027<br />
(JP).<br />
(74) TAKASHIMA, Hajime; Fujimura Yamato<br />
Seimei Bldg., 2-14, Fushimimachi 4-chome,<br />
Chuo-ku, Osaka-shi, Osaka 541-0044 (JP).<br />
(81) CA KR US.<br />
(84) EP (DE FR GB).<br />
(51) 7 H01L 21/28<br />
(11) WO 02/23605 (13) A1<br />
(21) PCT/US01/23580<br />
(22) 26 Jul/juil 2001 (26.07.2001)<br />
(25) en (26) en<br />
(30) 09/660,723 13 Sep/sep 2000 US<br />
(13.09.2000)<br />
(43) 21 Mar/mar 2002 (21.03.2002)<br />
(54) DRY ISOTROPIC REMOVAL OF INOR-<br />
GANIC ANTI-REFLECTIVE COATING<br />
AFTER POLY GATE ETCHING<br />
ENLEVEMENT ISOTROPE A SEC<br />
DE REVETEMENT ANTIREFLET MI-<br />
NERAL APRES GRAVURE DE PLU-<br />
SIEURS GRILLES<br />
(71) ADVANCED MICRO DEVICES, INC.<br />
[US/US]; One AMD Place, Mail Stop 68,<br />
Sunnyvale, CA 94088-3453 (US).<br />
(72) BONSER, Douglas, J.; 5336 Magdelena<br />
Drive, Austin, TX 78735 (US). PURDY,<br />
Matthew; 6307 Bluff Springs Road #731,<br />
Austin, TX 78744 (US). HUSSEY, James,<br />
H., Jr.; 2108 Airole Way, Austin, TX 78704<br />
(US).<br />
(74) DRAKE, Paul, S.; Advanced Micro Devices,<br />
Inc., 5204 East Ben White Boulevard, Mail<br />
Stop 562, Austin, TX 78741 (US).<br />
(81) AE AG AL AM AT AU AZ BA BB BG BR<br />
BY BZ CA CH CN CO CR CU CZ DE DK<br />
DM DZ EE ES FI GB GD GE GH GM HR<br />
HU ID IL IN IS JP KE KG KP KR KZ LC<br />
LK LR LS LT LU LV MA MD MG MK MN<br />
MW MX MZ NO NZ PL PT RO RU SD SE<br />
SG SI SK SL TJ TM TR TT TZ UA UG UZ<br />
VN YU ZA ZW.<br />
(84) AP (GH GM KE LS MW MZ SD SL SZ TZ<br />
UG ZW); EA (AM AZ BY KG KZ MD RU<br />
TJ TM); EP (AT BE CH CY DE DK ES FI<br />
FR GB GR IE IT LU MC NL PT SE TR); OA<br />
(BF BJ CF CG CI CM GA GN GQ GW ML<br />
MR NE SN TD TG).<br />
Published / Publiée :(c)<br />
(51) 7 H01L 21/306, H01H 3/00<br />
(11) WO 02/23606 (13) A1<br />
(21) PCT/US01/28614<br />
(22) 12 Sep/sep 2001 (12.09.2001)<br />
(25) en (26) en<br />
(30) 60/231,543 11 Sep/sep 2000 US<br />
(11.09.2000)<br />
(30) 60/231,529 11 Sep/sep 2000 US<br />
(11.09.2000)<br />
(30) PCT/US01/22661 18 Jul/juil 2001 US<br />
(18.07.2001)<br />
(43) 21 Mar/mar 2002 (21.03.2002)<br />
(54) DUAL POSITION LINEAR DISPLACE-<br />
MENT MICROMECHANISM<br />
MICROMECANISME DE DEPLACE-<br />
MENT LINEAIRE A DOUBLE POSI-<br />
TION<br />
(71) BRIGHAM YOUNG UNIVERSITY<br />
[US/US]; P.O. Box 21231, A-285 ASB,<br />
Provo, UT 84062 (US).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) HOWELL, Larry [US/US]; 1624 North<br />
Main, Orem, UT 84057 (US). LYON, Scott<br />
[US/US]; 1960 North Canyon Road, #40,<br />
Provo, UT 84604 (US). WEIGHT, Brent<br />
[US/US]; 417 North 600 East, Springville,<br />
UT 84663 (US). CLEMENTS, Deanne<br />
[US/US]; 2450 Sycamore Lane, #14B West,<br />
Lafayette, IN 47906 (US).<br />
(74) WITT, Evan; MADSON & METCALF, 15<br />
West South Temple, Suite 900, Salt Lake City,<br />
UT 84101 (US).<br />
(81) AE AG AL AM AT AU AZ BA BB BG BR<br />
BY BZ CA CH CN CO CR CU CZ DE DK<br />
DM DZ EC EE ES FI GB GD GE GH GM<br />
HR HU ID IL IN IS JP KE KG KP KR KZ<br />
LC LK LR LS LT LU LV MA MD MG MK<br />
MN MW MX MZ NO NZ PH PL PT RO RU<br />
SD SE SG SI SK SL TJ TM TR TT TZ UA<br />
UG US UZ VN YU ZA ZW.<br />
Declaration / Déclaration :<br />
(u) for / pour US only / seulement<br />
(51) 7 H01L 21/3063<br />
(11) WO 02/23607<br />
(21) PCT/US01/28934<br />
(13) A1<br />
(22) 14 Sep/sep 2001 (14.09.2001)<br />
(25) en (26) en<br />
(30) 09/662,682 15 Sep/sep 2000<br />
(15.09.2000)<br />
US<br />
(43) 21 Mar/mar 2002 (21.03.2002)<br />
(54) METAL-ASSISTED CHEMICAL ETCH<br />
POROUS<br />
METHOD<br />
SILICON FORMATION<br />
PROCEDE DE FORMATION DE SILI-<br />
CIUM POREUX PAR GRAVURE CHI-<br />
MIQUE ASSISTEE PAR UN METAL<br />
(71) THE BOARD OF TRUSTEES OF THE<br />
UNIVERSITY OF ILLINOIS [US/US];<br />
352 Henry Administration Building, Urbana,<br />
IL 61801 (US).<br />
(72) LI, Xiuling; 2712 Prairie Meadow Drive,<br />
Champaign, IL 61821 (US). BOHN, Paul,<br />
W.; 2413 Longmeadow Lane, Champaign,<br />
IL 61822 (US). SWEEDLER, Jonathan, V.;<br />
1502 Hillcrest Street, Urbana, IL 6122 (US).<br />
(74) FALLON, Steven, P.; Greer, Burns & Crain,<br />
Ltd., Suite 2500, 300 South Wacker Drive,<br />
Chicago, IL 60606 (US).<br />
(81) AE AG AL AM AT AU AZ BA BB BG BR<br />
BY BZ CA CH CN CR CU CZ DE DK DM<br />
DZ EE ES FI GB GD GE GH GM HR HU<br />
ID IL IN IS JP KE KG KP KR KZ LC LK<br />
LR LS LT LU LV MA MD MG MK MN MW<br />
MX MZ NO NZ PL PT RO RU SD SE SG SI<br />
SK SL TJ TM TR TT TZ UA UG UZ VN YU<br />
ZA ZW.<br />
(84) AP (GH GM KE LS MW MZ SD SL SZ TZ<br />
UG ZW); EA (AM AZ BY KG KZ MD RU<br />
TJ TM); EP (AT BE CH CY DE DK ES FI<br />
FR GB GR IE IT LU MC NL PT SE TR); OA<br />
(BF BJ CF CG CI CM GA GN GQ GW ML<br />
MR NE SN TD TG).<br />
(51) 7 H01L 21/3065, 21/205, C23C 16/44<br />
(11) WO 02/23608<br />
(21) PCT/JP01/07782<br />
(13) A1<br />
(22) 7 Sep/sep 2001 (07.09.2001)<br />
(25) ja (26) ja<br />
(30) 2000-275647 11 Sep/sep 2000<br />
(11.09.2000)<br />
JP<br />
(30) 2001-261471 30 Aug/août 2001<br />
(30.08.2001)<br />
JP<br />
(43) 21 Mar/mar 2002 (21.03.2002)<br />
(54) CLEANING GASSES AND ETCHING<br />
GASES<br />
GAZ DE NETTOYAGE ET GAZ D’AT-<br />
TAQUE<br />
(71) RESEARCH INSTITUTE OF INNOVA-<br />
TIVE TECHNOLOGY FOR THE EARTH<br />
[JP/JP]; 2, Kizugawa-dai 9-chome, Kizu-cho,<br />
Souraku-gun, Kyoto 619-0292 (JP). NA-<br />
TIONAL INSTITUTE OF ADVANCED<br />
INDUSTRIAL SCIENCE AND TECH-<br />
NOLOGY [JP/JP]; 3-1, Kasumigaseki<br />
1-chome, Chiyoda-ku, Tokyo 100-8921 (JP).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) SEKIYA, Akira [JP/JP]; c/o Tsukuba<br />
Center NATIONAL INSTITUTE OF<br />
ADVANCED INDUSTRIAL SCIENCE<br />
AND TECHNOLOGY, 1-1-1, Higashi,<br />
Tsukuba-shi, Ibaraki 305-8565 (JP). MIT-<br />
SUI, Yuki [JP/JP]; c/o RESEARCH INSTI-<br />
TUTE OF INNOVATIVE TECHNOLOGY<br />
FOR THE EARTH, 11-6, Nishi-Shimbashi<br />
2-chome, Minato-ku, Tokyo 105-0003<br />
(JP). TOMIZAWA, Ginjiro [JP/JP]; c/o<br />
DAIKIN INDUSTRIES, LTD., 3, Miyukigaoka,<br />
Tsukuba-shi, Ibaraki 305-0841 (JP).<br />
FUKAE, Katsuya [JP/JP]; c/o Shibukawa<br />
Laboratory KANTO DENKA KOGYO<br />
CO., LTD., 1497, Shibukawa-shi, Gunma<br />
377-8513 (JP). OHIRA, Yutaka [JP/JP]; c/o<br />
RESEARCH INSTITUTE OF INNOVATIVE<br />
TECHNOLOGY FOR THE EARTH, 11-6,