CMOS Production Compatible SiGe Heteroepitaxy for High ... - Imec

Tab. 1: Technological targets X, relative upper and lower specification limits
(USL/X, LSL/X), and capability indices C P , C PK of relevant epitaxy
parameters.
Number of Data Points
Parameter X LSL/X USL/X C P C PK
3000
2000
1000
0
LDE
LDC
DGe
x
RSBi
References:
60 nm
120 nm
25 nm
0,20
5000 Ω
Rsbi Distribution
Target
-25 %
-29 %
-50 %
-10 %
-38 %
Mean 4719 Ohm
Sigma 734 Ohm
Cp 1.1
Cpk 0.94
LSL ULS
3000 4000 5000 6000 7000 8000
Rsbi / Ohm
Fig. 3:
Distribution of R SBi including the value of
technological target and specification
limits (LSL, USL). The statistical values
and C P , C PK are inserted.
+42 %
+35 %
+50 %
+10 %
+54 %
1) E. Crabbe et al., IEDM Tech. Dig., pp. 83 - 86, 1993.
2) A. Schüppen et al., IEDM Tech. Dig., pp. 743 - 746, 1995.
3) D. L. Harame et al., IEDM Tech. Dig., pp. 19 - 22, 1992.
4) D. C. Ahlgren et al., IEDM Tech. Dig., pp. 859 - 862, 1996.
5) See, e. g., G. Ritter et al., MRS Symp. Proc., Vol. 387, pp. 341 - 346,
1995.
6) P. Zaumseil, Cryst. Res. Technol. 31(4), pp. 529 - 537, 1996.
7) See, e. g., ed. R. Bowman et al., „Advanced VLSI Fabrication“ (ICE,
1995),
pp. 1017 - 1022.
Number of Data Points
3000
2500
2000
1500
1000
500
1.3
1.6
1.5
1.5
1.1
1.2
1.5
1.4
1.4
0.9
Depletion Layer Width (E-B) Distribution
Target
Mean 48.7 nm
Sigma 4.3 nm
Cp 1.3
Cpk 1.2
LSL ULS
0
30 40 50 60 70
Depletion Layer Width (E-B) / nm
Fig. 4:
Distribution of the thickness values of
low doped emitter obtained by electrical
measurement on the background
of target and specification tolerance
values.