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Modelling and Simulating the Selective Epitaxial Growth of ... - Imec

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4a 3 4b<br />

1<br />

Figure 9: Silicon window – measurement template<br />

experimental<br />

results [nm]<br />

simulation<br />

results [nm]<br />

target thickness [nm]<br />

30,0 90,0 130,0 170,0<br />

1 173,0 165,1 169,0 171,0<br />

2 31,5 95,3 136,6 174,9<br />

3 141,5 45,2 26,5 17,7<br />

4a 23,6 63,9 69,8 80,6<br />

4b 20,6 64,9 83,5 82,6<br />

1 175,0 175,0 175,0 175,0<br />

2 30,5 93,5 136,0 178,0<br />

3 128,9 55,3 32,2 6,7<br />

4a 23,0 59,9 71,4 84,2<br />

4b 23,0 59,9 71,4 84,2<br />

Table 1: Comparison: experimental vs. simulation results<br />

References<br />

[1] C. Menon, A. Bentzen, G. L<strong>and</strong>gren, <strong>and</strong> H. Radamson,<br />

“Defect density in non-selective <strong>and</strong> selective<br />

Si/SiGe structures,” Journal <strong>of</strong> Crystal <strong>Growth</strong>,<br />

vol. 237, p. 259ff, Apr. 2002.<br />

[2] R. Bashir, F. Hébert, J. DeSantis, et al., “A complementary<br />

bipolar technology family with a vertically<br />

integrated PNP for high-frequency analog applications,”<br />

IEEE Transactions on Electron Devices,<br />

vol. 48, p. 2525ff, Nov. 2001.<br />

[3] M. Racanelli, K. Schuegraf, A. Kalburge, et al., “Ultra<br />

high speed SiGe NPN for advanced BiCMOS technology,”<br />

IEDM Technical Digest, p. 336ff, 2001.<br />

[4] K. Fujihira, S. Tamura, T. Kimoto, <strong>and</strong> H. Matsunami,<br />

“Low-loss, high-voltage 6H-SiC epitaxial pi-n<br />

diode,” IEEE Transactions on Electron Devices,<br />

vol. 49, p. 150ff, Jan. 2002.<br />

[5] D. Behammer, L. Vescan, R. Loo, et al., “<strong>Selective</strong>ly<br />

grown vertical Si-p MOS transistor with short channel<br />

lengths,” Electronics Letters, vol. 32, no. 4, p. 406ff,<br />

1996.<br />

2<br />

[6] M. Liebsch, “Selektives epitaktisches Schichtwachstum<br />

für skalierte DRAM,” Diplomarbeit, Dresden<br />

University <strong>of</strong> Technology, July 2002.<br />

[7] M. T. Swihart <strong>and</strong> R. W. Carr, “On <strong>the</strong> mechanism<br />

<strong>of</strong> homogeneous decomposition <strong>of</strong> <strong>the</strong> chlorinated<br />

silanes. Chain reactions propagated by divalent silicon<br />

species,” J. Phys. Chem. A, vol. 102, no. 9, p. 1542ff,<br />

1998.<br />

[8] K. Grimm, “Untersuchung der Facettenbildung bei selektiver<br />

Epitaxie von Si mittels LPCVD,” Forschungsbericht<br />

Jül-3416, Forschungszentrum Jülich, Institut<br />

für Schicht- und Ionentechnik, July 1997.

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