3C-SiC growth on Si substrates via CVD: An introduction - Mansic

(a) 18 µm/h and (b) 30 µm/h are shown. For both samples, the peak at 33° is
the substrate Si (200) peak. Along with the substrate peaks a pronounced peak
at 41.3° attributed to the diffraction due to <strong>3C</strong>-<strong>SiC</strong> (200) planes was observed.
For both samples, the peak at about 36° attributed to the <strong>3C</strong>-<strong>SiC</strong> (111) plane did
not appeared. From the spectra it could be concluded that the layers were grown
epitaxially with preferred orientation and highly aligned with that of the
substrates.
4.2.2. Rocking curve
Figure 5. XRD spectra for <strong>3C</strong>-<strong>SiC</strong> grown on Si (001)
The XRD rocking curve data of the 10 µm thick <strong>3C</strong>-<strong>SiC</strong> epitaxial film grown at a
rate of about 30 µm/h shows that the full width at half maximum (FWHM) of the
(200) peak was 300 arcsec.
The <strong>growth</strong> of <strong>3C</strong>-<strong>SiC</strong> thin films on Si(001), Si(011) and Si(111) substrates using
silane and propane precursors in LPCVD (400 Torr) at carbonization
temperatures 1135°C and <strong>growth</strong> temperature 1380°C was investigated.
Different from APCVD technique, the LPCVD method produces homogeneous films
with a smoother surface but thinner films (i.e., lower <strong>growth</strong> rate). The rocking
curve data shows a narrower FWMH and therefore a better quality is obtained
when a LPCVD process is used, except for the films grown on Si (110) substrate.
4.3. Transmission electron microscopy (TEM)
A plane view TEM micrograph (Figure 6) from the <strong>3C</strong>-<strong>SiC</strong> film shows the presence
of the stacking faults and the anti-phase boundaries.
Physics of Advanced Materials Winter School 2008 5