3C-SiC growth on Si substrates via CVD: An introduction - Mansic

7. References
[1] E. Polychroniadis, M. Syväjärvi, R. Yakimova, J. Stoemenos.
Microstructural characterization of very thick freestanding <strong>3C</strong>-<strong>SiC</strong>
wafers. Journal of Crystal Growth 263 (2004), p. 68-75
[2] J.A. Powell, D.J. Jarkin, L.G. Matus, W.J. Choyke, J.L. Bradshaw, L.
Henderson, M. Yoganathan, J. Yang, P. Pirouz. Growth of improved
quality <strong>3C</strong>-<strong>SiC</strong> films on 6H-<strong>SiC</strong> substrates. Applied Physics Letters 56
(1990), p. 1353
[3] S. Nishino, Y. Hazuki, H. Matsunami, T. Tanaka. Chemical Vapor
Deposition of Single Crystalline β-<strong>SiC</strong> Films on Silicon Substrate with
Sputtered <strong>SiC</strong> Intermediate Layer. Journal of Electrochemical Society
127 (1980), p. 2674
[4] H. Matsunami, S. Nishino, T. Tanaka. Heteroepitaxial <strong>growth</strong> of β-<strong>SiC</strong> on
silicon substrate using <strong>SiC</strong>l4-C3H8-H2 system. Journal of Crystal
Growth 45 (1978), p. 138.
[5] S. Nishino, J.A. Powell, H.A. Will. Production of Large-area Singlecrystal
Wafers of Cubic <strong>SiC</strong> for Semiconductors. Applied Physics Letters
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[6] C.A. Zorman, A.J. Fleischman, A.S. Dewa, M. Mehregany, C. Jacob, S.
Nishino, P. Pirouz. Epitaxial <strong>growth</strong> of <strong>3C</strong>-<strong>SiC</strong> films on 4 in. diam (100)
silicon wafers by atmospheric pressure chemical vapor deposition.
Journal of Applied Physics 78 (1995), p. 5136
[7] K. Ikoma, M. Yamanaka, H. Yamaguchi, Y. Shichi. Heteroepitaxial Growth
of β-<strong>SiC</strong> on Si(111) by CVD using a CH<strong>3C</strong>l-SiH4-H2 Gas System.
Journal of Electrochemical Society 138 (1991), p. 3028
[8] H. Nagasawa, K. Yagi, T. Kawahara. <strong>3C</strong>-<strong>SiC</strong> Hetero-epitaxial <strong>growth</strong> on
undulant Si(001) substrate. Journal of Crystal Growth 237 (2002), p.
1244
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