3C-SiC growth on Si substrates via CVD: An introduction - Mansic

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Figure 6. Plane view TEM micrograph The cross-section TEM shows excellent quality and perfect alignment of films with substrate. Micro-twins and stacking faults are typical defects for <strong>3C</strong>-<strong>SiC</strong>/Si heteroepitaxy system. Figure 7. Cross-section TEM (X-TEM) micrographs showing the <strong>SiC</strong>/Si interface: a) Low Pressure (LP) process, b) Atmospheric Pressure (LP) process on Si (100) substrate and the associated selected area electron diffraction images. The thickness affects strongly the size of the defect-free domains. As Figure 7.b shows, in the APCVD carbonization, a higher density of defects in initial stage of <strong>growth</strong> was observed. The stacking faults (SFs) along the (111) directions detected (by plan view) on the surface with a characteristic cross-shaped Physics of Advanced Materials Winter School 2008 6
diffraction of the (200) <strong>3C</strong>-<strong>SiC</strong> spots. The micro-twins appear in the initial stage of <strong>growth</strong> leading to the exposure of the (111) plane on the surface during <strong>growth</strong>. 4.4. Low Temperature photoluminescence (LTPL) The LTPL measurements were performed on different layers grown with different <strong>growth</strong> rate. The samples were irradiated with 40 mW He-Cd laser (325nm) at 2K. The <strong>3C</strong>-<strong>SiC</strong> penetration is 2,9 µm. In Figure 9 we see a global picture of the <strong>3C</strong>- <strong>SiC</strong> LTPL spectrum. It shows that the nitrogen no-phonon line (N0) at 5210A° is absent. The peak 2 is an intrinsic defect whose no-phonon line is at 5373A°. TA, LA, TO, LO are the first order phonon replicas of N0. 5. Summary Figure 9. 2K spectrum of the <strong>3C</strong>-<strong>SiC</strong> film grown by CVD A process suitable to produce high-quality <strong>3C</strong>-<strong>SiC</strong> hetero-epitaxial films of single crystal morphology has been developed in a hot-wall CVD reactor. Epitaxial film deposition on planar (100) Si substrates was performed at a <strong>growth</strong> rate ranging between 15 and 30 µm/h. The density of different defects still needs to be reduced in order to realize electronic devices. The carbonization step and compliant substrates are under investigation. Finally, <strong>3C</strong>-<strong>SiC</strong> membranes for MEMS applications are under development. Physics of Advanced Materials Winter School 2008 7
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3C-SiC growth on Si substrates via CVD: An introduction - Mansic

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