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Photovoltaics - IPHT Jena

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Table 4.2: Band gap,, effective mass and carrier density in intrinsic semiconductors<br />

semiconductor Si GaAs<br />

E g/eV<br />

1,12 1,43<br />

m /m 1,08 0,067<br />

nZ 0<br />

m /m 0,55 0,47<br />

pZ 0<br />

-3 n i/cm<br />

at 300 K<br />

10 6<br />

10 10<br />

Table 4.3: Energy level of donors and acceptors in silicon<br />

donors E-E c D/meV acceptors EA-E v/meV<br />

P 45 B 44<br />

As 53 Al 68<br />

Sb 42 Ga 72<br />

Bi 71 In 155<br />

Fig. 4.11: Fermi level as depending on temperature for different<br />

doping levels (n doping increasing from 1 to 3)<br />

4 Semiconductors I: Equilibrium F. Falk, <strong>Photovoltaics</strong> WS 2010/11

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