Photovoltaics - IPHT Jena
Photovoltaics - IPHT Jena
Photovoltaics - IPHT Jena
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Table 4.2: Band gap,, effective mass and carrier density in intrinsic semiconductors<br />
semiconductor Si GaAs<br />
E g/eV<br />
1,12 1,43<br />
m /m 1,08 0,067<br />
nZ 0<br />
m /m 0,55 0,47<br />
pZ 0<br />
-3 n i/cm<br />
at 300 K<br />
10 6<br />
10 10<br />
Table 4.3: Energy level of donors and acceptors in silicon<br />
donors E-E c D/meV acceptors EA-E v/meV<br />
P 45 B 44<br />
As 53 Al 68<br />
Sb 42 Ga 72<br />
Bi 71 In 155<br />
Fig. 4.11: Fermi level as depending on temperature for different<br />
doping levels (n doping increasing from 1 to 3)<br />
4 Semiconductors I: Equilibrium F. Falk, <strong>Photovoltaics</strong> WS 2010/11