Photovoltaics - IPHT Jena
Photovoltaics - IPHT Jena
Photovoltaics - IPHT Jena
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- 24 -<br />
15 -3<br />
Table 4.4: Carrier mobilities at 300 K (for Si and GaAs dopand density 10 cm )<br />
Si GaAs CdTe CuInSe2 a-Si<br />
2 -1 -1 ì /cm V s 1350 8800 600 320 0,1...1<br />
n<br />
2 -1 -1 -3<br />
ì /cm V s 500 400 10 10 ...0,03<br />
p<br />
Fig. 4.14: Mobility of electrons and holes at 300 K as<br />
depending on doping level[Enderlein]<br />
Fig. 4.15: Mobilities for different doping levels of silicon as depending on temperature<br />
[Enderlein]<br />
4 Semiconductors I: Equilibrium F. Falk, <strong>Photovoltaics</strong> WS 2010/11