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Photovoltaics - IPHT Jena

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- 24 -<br />

15 -3<br />

Table 4.4: Carrier mobilities at 300 K (for Si and GaAs dopand density 10 cm )<br />

Si GaAs CdTe CuInSe2 a-Si<br />

2 -1 -1 ì /cm V s 1350 8800 600 320 0,1...1<br />

n<br />

2 -1 -1 -3<br />

ì /cm V s 500 400 10 10 ...0,03<br />

p<br />

Fig. 4.14: Mobility of electrons and holes at 300 K as<br />

depending on doping level[Enderlein]<br />

Fig. 4.15: Mobilities for different doping levels of silicon as depending on temperature<br />

[Enderlein]<br />

4 Semiconductors I: Equilibrium F. Falk, <strong>Photovoltaics</strong> WS 2010/11

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