Photovoltaics - IPHT Jena

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- 26 - Table 4.5: Debye length in instrinsic semiconductors at 300 K semiconductor Si GaAs -3 l D/cm 1,15�10 0,116 Fig. 4.19: Band bending near the surface of an intrinsic semiconductor due to surface charges 4 Semiconductors I: Equilibrium F. Falk, <strong>Photovoltaics</strong> WS 2010/11
- 27 - Fig. 4.20: Band bending near the surface of an n-doped semiconductor due to surface charges 4 Semiconductors I: Equilibrium F. Falk, <strong>Photovoltaics</strong> WS 2010/11
Page 1 and 2: Institute of Photonic Technology Al
Page 3 and 4: - 3 - 1 Energy Consumption and ist
Page 5 and 6: - 5 - Fig. 1.4: Increase of mean te
Page 7 and 8: - 7 - Table 1.4: Production and mar
Page 9 and 10: -9 - Fig. 2.3: Insolation as depend
Page 11 and 12: - 11 - Fig. 2.6: Average yearly glo
Page 13 and 14: Table 3.1: Band gaps of semiconduct
Page 15 and 16: - 15 - Fig. 3.6: Absorptions coeffi
Page 17 and 18: - 17 - 4 Semiconductors I: Equilibr
Page 19 and 20: Fig. 4.4: Band structure of GaAs Fi
Page 21 and 22: Fig. 4.9: Fermi distribution for di
Page 23 and 24: - 23 - Fig. 4.12: Carrier density i
Page 25: - 25 - Fig. 4.17: Resistivity of n-
Page 29 and 30: - 29 - 4 Semiconductors I: Equilibr
Page 31 and 32: - 31 - 5 Semiconductors II: Non-Equ
Page 33 and 34: Reverse bias n-type + Forward bias
Page 35 and 36: - 35 - Fig. 5.7: Width of space cha
Page 37 and 38: Fig. 5.10: I-V-curve of a solar cel
Page 39 and 40: Fig. 5.12: Circuit diagram of a sol
Page 41 and 42: Fig. 6.3: Wire saw for wafering - 4
Page 43 and 44: - 43 - Fig. 6.6: Open circuit volta
Page 45 and 46: - 45 - Fig. 6.10: Open circuit vola
Page 47 and 48: - 48 - 7 Types of Solar Cells II: T
Page 49 and 50: - 50 - Fig. 7.5: Open circuit volta
Page 51 and 52: - 52 - 7 Types of Solar Cells II: T
Page 53 and 54: - 54 - Fig. 7.12: LLC process: Laye
Page 55 and 56: Table 7.1: Properties of CdTe and C
Page 57 and 58: Fig. 7.20: Phasen diagram of CdTe/C
Page 59 and 60: - 60 - Fig. 7.24: Band diagram of a
Page 61 and 62: enlargement X 1 X 10 3 X 10 6 X 10
Page 63 and 64: References A. Goetzberger, V.U. Hof

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