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Science Opportunities in Azerbaijan - Science and Technology ...

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<strong>Technology</strong> Profile<br />

New Anti – Stokes Lum<strong>in</strong>ophors <strong>and</strong> Laser Mediums<br />

on the Base of II-III 2 - VI 4 Typed Wide-B<strong>and</strong> Chalcogenide<br />

Semiconductors Doped by Rare-Earth Elements<br />

Description<br />

Traditional <strong>in</strong>vestigations, synthesis <strong>and</strong> use of anti –<br />

Stokes lum<strong>in</strong>ophors (ASL) have an objective to visualize<br />

IR-radiation, i.e. IR-signal conversion <strong>in</strong>to visible b<strong>and</strong><br />

(0.38÷0.76mkm). Recently there have been created systems<br />

of length fiber optic communication l<strong>in</strong>es where data<br />

carrier is the radiation with wavelength about 1.55 mkm.<br />

There have been developed lasers on the base of erbium<br />

glasses with wavelength of generation 1.54÷1.65 mkm.<br />

Therefore activation of wide-b<strong>and</strong> semiconductive compounds<br />

EuGa 2S 4 <strong>and</strong> YbGa 2S 4 by 4f-elements, study of impurity<br />

state <strong>and</strong> behavior is one of the central issues of<br />

physics <strong>and</strong> material science of semiconductors as a<br />

whole.<br />

Nowadays complex rare – earth compounds of MIM II<br />

2 X4VI (MI -Eu, Yl,Sm; MII-Ga,In; X VI<br />

4 - S,Se) – typed take a special<br />

place among wide - b<strong>and</strong> semiconductors.<br />

MIM II<br />

2 X4VI - typed crystals have been crystallized <strong>in</strong> rhombic<br />

s<strong>in</strong>gony, they are high – resistance (105 ÷10IIOhm/cm), wide-b<strong>and</strong> (~4.4eV) semiconductors <strong>and</strong> show particularly<br />

pronounced lum<strong>in</strong>escent <strong>and</strong> photoconductive properties.<br />

In accord<strong>in</strong>g with above- mentioned it is of <strong>in</strong>terest spectroscopic<br />

<strong>in</strong>vestigation of 4f-elements <strong>in</strong> Eu (Yb) Ga2S4 crystals.<br />

There has been developed technology of II-III2 - IV2 (II-Eu,<br />

Yb,Sm,Ca, Sr,Ba; III-Ga,Al;VI-S,Se,O) - typed semiconductors<br />

activated by rare-earth ions.<br />

Innovative Aspects <strong>and</strong> Ma<strong>in</strong> Advantages<br />

Production of effective devices for visualization <strong>and</strong> illum<strong>in</strong>ation,<br />

be<strong>in</strong>g able to compete with traditional systems requires<br />

to manufacture lum<strong>in</strong>ophors with specific properties.<br />

This necessity promotes development of new materials <strong>and</strong><br />

optimization of exist<strong>in</strong>g lum<strong>in</strong>ophors. İn this aspect perspective<br />

ones are ternary alkali-earth chalcogenide semiconductors<br />

of II-III 2 - IV 2 (II-Eu, Yb,Sm,Ca, Sr,Ba;<br />

III-Ga,Al;VI-S,Se,O) – typed activated by rare-earth ions.<br />

One of the qualities of ternary compounds compar<strong>in</strong>g<br />

favourably with b<strong>in</strong>ary one as regards applied use is the resistance<br />

to hydrolysis <strong>and</strong> good implantation of rare-earth<br />

ions <strong>in</strong>to crystal lattice. High l<strong>in</strong>earity of cathode lum<strong>in</strong>escence<br />

at high densities of current makes them suitable for<br />

use as a lum<strong>in</strong>ophor <strong>in</strong> TV <strong>and</strong> field ionization displays. Se-<br />

Contact Details<br />

Institute of Physics<br />

Contact person: Tagiev Oktay Bahadur<br />

Address: 33, H. Javid Avenue<br />

AZ1143, Baku, <strong>Azerbaijan</strong><br />

lection of correspond<strong>in</strong>g sensitizers <strong>and</strong> activators one can<br />

change efficiency of conversion of various k<strong>in</strong>ds of energy<br />

<strong>in</strong>to light one <strong>and</strong> lum<strong>in</strong>escence colors of these compounds.<br />

Areas of Application<br />

Systems of fiber optic communication l<strong>in</strong>es, lasers with<br />

wavelength of generation 1.54-1/65mkm, night vision<br />

equipments.<br />

Stage of Development<br />

Development phase - laboratory tested.<br />

Fig.1 The diagram of light emitt<strong>in</strong>g diode with phosphide we.<br />

Fig.2. Three-color comb<strong>in</strong>ation wed <strong>in</strong> light emitt<strong>in</strong>g diode.<br />

Tel: (994 12) 439 6795<br />

Fax: (994 12) 447 0456<br />

E-mail: oktay58@mail.ru<br />

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