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EPP Europe P2.2022

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» TEST & QUALITY ASSURANCE Source: Omron Electronic Components Europe Isolation and insertion loss characteristics for G3VM-21MT the diagram on p. 55). This design facilitates a higher degree of control over leakage current. As shown in the diagram, the leakage current flows to the ground via a central joint when the relay is in the OFF position and the primary line is open. The result is a substantially lower level of leakage from the DUT than in a standard circuit configuration. The technical construction centres on MOSFET pairs and enables effective control of the leakage current, delivering minimal levels of pA or even fA. The Omron G3VM-21MT module, for instance, specifies a maximum leakage current less than 1pA at V OFF 20V. Real-world values are usually lower by a factor of ten. This indicates that T-circuit solid-state modules represent a real alternative to conventional solutions provided by reed relays in terms of measurement performance. Reference design is encouraging A reference design is available to help design engineers evaluate the impact of transitioning from reed relays to these new T-circuit solid-state modules. The aim of this is to show the value of MOSFET relays in standard and T-circuit configurations and reed relays on the same board under identical conditions. Comparison of measurement accuracy can be achieved across mature mechanical reed relays, MOSFET relays and the MOSFET T-module. The reference design highlights further differences between these options and reveals the value of the T-module. The results (shown in the graph on p.55) prove that levels of leakage current from T-module and reed relays are almost same as the reference value from the DUT diode. Gabriel Sikorjak is European Technical Sales Manager at Omron Electronic Components Europe. He is responsible for managing its Technical Competence Center in Bratislava, Slovakia. He joined the company in 2005 and has a degree in control and automation engineering from the Technical University in Kosice. Source: Omron Electronic Components Europe Comparison of reed relay characteristics with those of a typical solid-state relay 48 EPP Europe » 11 | 2022

The range of T-circuit MOSFET relay modules currently available Source: Omron Electronic Components Europe One of the key attributes of G3VM-MT modules is their performance at higher frequency levels. While continuing to offer reliability and durability like other MOSFET relays, these modules also deliver further positive characteristics at higher frequencies. As shown in the diagram, results from the G3VM- 21MT confirm that a device with a high reliability, small size and extremely low leakage can offer outstanding RF performance. Its isolation performance is less than –30dB at 1 GHz and the insertion loss is more than –3dB (see graphs on p. 56). The combination of benefits offered by MOSET relays and mechanical relays mean the G3VM-MT series is suited not only to ATE solutions, but is also worth considering in other applications. More than a component With their T- circuit structure, Omron’s G3VM-MT MOSFET modules demonstrate exceptionally low leakage current, giving accurate measurements in all types of test equipment. Their compact size (5mm x 3.75 mm x 2.7mm), achieved by incorporating the MOSFETs into the module, allows for simpler PCB board design owing to the elimination of crossovers in PCB tracks and simplified wiring patterns. The device is designed for surface mounting and offered in SPST-NO form with ambient temperature ranges above 100°C. New solutions include a high current and high voltage model (as seen in the diagram and graph above). Together, these specifications help pave the way for wider use of T-circuit MOSFET relay modules. In summary, these modules offer maintenancefree operation and a simplified design that saves space on PCBs as well as great measurement performance: contributing to industry progress and adding value for the customer. Electronica, Booth A3.538 Zusammenfassung Die Verwendung von MOSFET-Modulen bietet einen wartungsfreien Betrieb zusammen mit einem vereinfachten Design, welches Platz auf der Leiterplatte spart bei gleichzeitig hervorragender Messleistung zum Mehrwert für den Kunden. Résumé L'utilisation de modules MOSFET offre un fonctionnement sans entretien ainsi qu'une conception simplifiée qui permet d'économiser de l'espace sur le circuit imprimé tout en fournissant d'excellentes performances de mesure, ce qui constitue une valeur ajoutée pour le client. Резюме Системы, работающие на основе модулей MOSFET, не требуют обслуживания, имеют упрощенную конструкцию, занимающую меньше места на печатной плате, и одновременно обеспечивают прекрасные измерительные характеристики, что в совокупности экономит время и средства клиента. EPP Europe » 11 | 2022 49