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Curvature - Laytec

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Example R 405 : InGaN MQW (const. T)<br />

Reflectance (405 nm)<br />

0.25<br />

0.24<br />

0.23<br />

0.22<br />

0.21<br />

0.20<br />

0.19<br />

0.18<br />

0.17<br />

R 405<br />

pocket temperature<br />

QW<br />

Barrier<br />

GaN InGaN-MQW<br />

growth time (s)<br />

cool down<br />

1200<br />

1000<br />

800<br />

600<br />

400<br />

T(°C)<br />

0<br />

-200<br />

-400<br />

-600<br />

-800<br />

� All quantum wells<br />

and barriers<br />

distinguishable<br />

� Temperature<br />

changes between<br />

barrier and well not<br />

visible in R 405

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