Curvature - Laytec

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Outline � MOVPE growth equipment � EpiCurveTT - What can be measured? � In-situ results & analysis - Example: sapphire/GaN/AlGaN/InGaN - Pocket temperature vs. process temperature - Reflectance @ 950 nm - <strong>Curvature</strong> & @ 405 nm
MOVPE growth equipment nitrides • AIX2400G3-HT planetary reactor with 11x2 / 8x3 inch configuration satellite • Water-cooled triple gas inlet (V-III-V), TaC-coated sandwich susceptor
Page 1: Analysis and Interpretation of EpiC
Page 5 and 6: Wafer asphericity (deviation from r
Page 7 and 8: Pocket temperature vs. process temp
Page 9 and 10: Reflectance � Example: 420 nm LD
Page 11 and 12: Wafer-to-wafer & run-to-run analysi
Page 13 and 14: Thickness uniformity tuning using R
Page 15 and 16: Thickness uniformity tuning using R
Page 17 and 18: Reflectance � Example: 420 nm LD
Page 19 and 20: Example R 405: AlN reflectance 0.30
Page 21 and 22: Simulation: InGaN composition vs. r
Page 23 and 24: Wafer curvature Curvature (1/km) 25
Page 25 and 26: Wafer Curvature Curvature (1/km) 25
Page 33 and 34: Curvature changes wafer-temperature
Page 35 and 36: Summary Temperature: � Shows resp

Curvature - Laytec

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