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Curvature - Laytec

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Reflectance<br />

� Example: 420 nm<br />

LD test structure<br />

R 405/950 nm<br />

0.35<br />

0.30<br />

0.25<br />

0.20<br />

0.15<br />

0.10<br />

0.05<br />

0.00<br />

Desorption<br />

GaN<br />

Growth time (s)<br />

Process Temperature<br />

Pocket Temperature.<br />

Reflectance<br />

<strong>Curvature</strong><br />

AlGaN/GaN<br />

InGaN<br />

T (°C)<br />

1200<br />

1000<br />

800<br />

600<br />

400<br />

200<br />

κ<br />

(km -1 )<br />

300<br />

250<br />

200<br />

150<br />

100<br />

50<br />

0

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