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Curvature - Laytec

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Wafer curvature<br />

<strong>Curvature</strong> (1/km)<br />

250<br />

200<br />

150<br />

100<br />

50<br />

0<br />

-50<br />

-100<br />

desorption<br />

GaN<br />

<strong>Curvature</strong><br />

growth time (s)<br />

pocket temperature<br />

n-GaN (Al,Ga)N InGaN<br />

1200<br />

1000<br />

800<br />

600<br />

400<br />

T(°C)<br />

0<br />

-200<br />

-400<br />

cooling<br />

� Initial substrate<br />

curvature<br />

� Thermal induced<br />

substrate bow<br />

(concave)<br />

� Temperaturerelated<br />

curvature<br />

change

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