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Analog CMOS Integrated Circuit Design Set 2 - Courses - University ...

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I<br />

D<br />

SM<br />

= I<br />

Long Channel Current Equations - 7<br />

• If V DS > V GS – V TH, the transistor is in saturation (active) region,<br />

and the channel is pinched off.<br />

L'<br />

∫ I dx =<br />

D<br />

x=<br />

0<br />

VGS<br />

−VTH<br />

∫WC<br />

μ [ V<br />

V = 0<br />

ox<br />

1 W<br />

I D = μnC<br />

ox ( VGS<br />

−V<br />

2 L'<br />

n<br />

GS<br />

TH<br />

)<br />

−V<br />

( x)<br />

−V<br />

2<br />

TH<br />

EECE 488 – <strong>Set</strong> 2: Background<br />

SM 10<br />

] dV<br />

• Let’s, for now, assume that L’=L. The fact that<br />

L’ is not equal to L is a second-order effect<br />

known as channel-length modulation.<br />

• Since I D only depends on V GS, MOS transistors in saturation can be<br />

used as current sources.<br />

SM<br />

Long Channel Current Equations - 8<br />

• Current Equation for NMOS:<br />

DS<br />

⎧<br />

⎪0<br />

; if VGS<br />

< VTH<br />

( Cut − off )<br />

⎪<br />

⎪<br />

⎪ W<br />

⎪μ<br />

n ⋅ Cox<br />

⋅ ⋅(<br />

VGS<br />

−VTH<br />

) ⋅V<br />

⎪ L<br />

= ⎨<br />

⎪ W<br />

⎪μ<br />

n ⋅ Cox<br />

⋅ ⋅<br />

⎪ L<br />

⎪<br />

⎪<br />

⎪1<br />

W<br />

2<br />

⋅ μ ⋅ C ⋅ ⋅ ( V −V<br />

)<br />

⎪ n ox<br />

GS TH<br />

⎩2<br />

L<br />

DS<br />

; if V<br />

1 2<br />

[ ( VGS<br />

−VTH<br />

) ⋅V<br />

DS − ⋅VDS<br />

]<br />

2<br />

; if V<br />

GS<br />

GS<br />

> V<br />

> V<br />

EECE 488 – <strong>Set</strong> 2: Background<br />

, V<br />

; if V<br />

TH<br />

TH<br />

, V<br />

GS<br />

DS<br />

DS<br />

V<br />

> V<br />

TH<br />

GS<br />

GS<br />

, V<br />

DS<br />

−V<br />

TH<br />

−V<br />

TH<br />

< V<br />

GS<br />

−V<br />

( Saturation )<br />

19<br />

) ( Deep Triode)<br />

TH<br />

( Triode)<br />

20

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