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Diploma Thesis - Erich Schmid Institute

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The relations between the compliance tensor and matrix are:<br />

sijkl = smn when m and n are 1, 2 or 3.<br />

2 sijkl = smn when either m or n are 4, 5 or 6.<br />

4 sijkl = smn when both m and n are 4, 5 or 6.<br />

Mechanical properties of crystals<br />

The advantage of working with matrix notation is the compacter formalism, though<br />

the rotation of the compliance and the stiffness matrix is more complicated than the<br />

rotation in the tensor notation. For example an isotropic material can be<br />

characterized by the following stiffness matrix:<br />

⎛ c11<br />

c12<br />

c12<br />

0 0 0 ⎞<br />

⎜<br />

⎟<br />

⎜c12<br />

c11<br />

c12<br />

0 0 0 ⎟<br />

⎜c<br />

⎟<br />

12 c12<br />

c11<br />

0 0 0<br />

c = ⎜<br />

⎟<br />

(equ. 4.14)<br />

⎜ 0 0 0 c44<br />

0 0 ⎟<br />

⎜ 0 0 0 0 c ⎟<br />

44 0<br />

⎜<br />

⎟<br />

⎜<br />

⎟<br />

⎝ 0 0 0 0 0 c44<br />

⎠<br />

Isotropic materials have only two independent components, so the third one can be<br />

calculated:<br />

4.3. Intrinsic and extrinsic stress<br />

1<br />

c44 = ( c11<br />

− c12<br />

)<br />

2<br />

The residual stresses in thin films results from a growth procedure and from a cooling<br />

down to the operation temperature after the deposition with specific intrinsic and<br />

extrinsic stress contributions, respectively. The intrinsic stresses originate from a<br />

specific microstructure development and the film densification during the growth [5].<br />

An atomic disorder caused by foreign atoms integrated into the lattice can serve as<br />

an example of the intrinsic stress origin. An impurity atom can substitute a lattice<br />

atom or it can be found in lattice gaps as an interstitial atom. The compressive/tensile<br />

stress is getting higher if the atomic radius of the impurity atoms is larger/smaller than<br />

the atomic radius of the original lattice atoms. Intrinsic stresses can be reduced by<br />

applying high substrate temperatures during deposition, because of the high mobility<br />

of the atoms reduces the disorder. An additional part of intrinsic stresses occur in<br />

sputtered layers. The incoming sputtered atoms are hitting the layer and this is like<br />

9

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