Diploma Thesis - Erich Schmid Institute

Deposition of Thin Films
the development laboratories of “Infineon AG, München”. In the preparation phase
the substrate is degreased and etched for the removal of surface contaminates and
mechanical damage due to polishing, and finally rinsed in deionised water. The
deposition of both sublayers on monocrystalline Al2O3(0 0 0 1) was performed at
700 °C in ultra-high vacuum gradually - at first BGaN sublayer was prepared and
then the deposition process was concluded with the deposition of GaN sublayer. The
original goal was to understand an influence of the BGaN buffer layer on the stress
state in the GaN top layer.
35