Development of a New Electro-thermal Simulation Tool for RF circuits

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xii List of Figures 3.81 Schematic to Simulation 3 . . . . . . . . . . . . . . . . . . . . . . . . . 105 3.82 Results of Simulation 3. . . . . . . . . . . . . . . . . . . . . . . . . . . 106 3.83 Schematic to Simulation 4. . . . . . . . . . . . . . . . . . . . . . . . . . 107 3.84 Layout for simulation 4. . . . . . . . . . . . . . . . . . . . . . . . . . . 107 3.85 Simulation 4.(1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 3.86 Simulation 4 (2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 3.87 Simulation 4 (3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 3.88 Thermal maps for simulation 4. . . . . . . . . . . . . . . . . . . . . . . 110 3.89 Schematic to Simulation 5. . . . . . . . . . . . . . . . . . . . . . . . . . 112 3.90 Simulation 5 (1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 3.91 Simulation 5 (2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 3.92 Schematic to Simulation 6. . . . . . . . . . . . . . . . . . . . . . . . . . 114 3.93 Simulation 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 3.94 Schematic to Simulation 7. . . . . . . . . . . . . . . . . . . . . . . . . . 116 3.95 Simulation 7 (1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 3.96 Simulation 7 (2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 3.97 Thermal maps for Simulation 7. . . . . . . . . . . . . . . . . . . . . . . 118 3.98 Simulation 8 (1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 3.99 Simulation 8 (2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 3.100Thermal maps for the simulation 8. . . . . . . . . . . . . . . . . . . . . 120 3.101Circuit for transient simulation. . . . . . . . . . . . . . . . . . . . . . . 121 3.102The collector current reduces with increasing temperature due to the negative temperature coefficient of the current gain. . . . . . . . . . . . 121 A.1 Reference thermal impedance responses, created using [12] according to parameters in the Tab. A.1. . . . . . . . . . . . . . . . . . . . . . . . . 125 A.2 Identification results for the curve n o 1, with only one Simplex pass. . . 127 A.3 Derivative of the transient thermal response in time d(Zth)/dt. The selected time range (red) is restricted by the gb parameter. . . . . . . . 130 A.4 Possible influence of the package . . . . . . . . . . . . . . . . . . . . . . 131 A.5 Description of thermal networks. Source [13]. . . . . . . . . . . . . . . . 133 A.6 Cauer type ladder network. . . . . . . . . . . . . . . . . . . . . . . . . 134 A.7 The Crank-Nicolson stencil for 1D problem. . . . . . . . . . . . . . . . 134
List of Tables 1.1 Comparison between bulk Si and SOG transistor. Source: [14] . . . . . 5 1.2 Estimated thermal conductivity for various materials used/to be used in electronics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 Results of 3D detailed simulation. . . . . . . . . . . . . . . . . . . . . . 30 2.2 Equilibrium temperatures corresponding to the transient thermal curves in Fig. 2.23. The diagonal corresponds to self-heating. P = 1W . . . . . 35 2.3 Thermal resistance values for all branches in Fig. 2.24. . . . . . . . . . 36 3.1 Values (1) of thermal resistances for Simulation 2. . . . . . . . . . . . . 102 3.2 Values (2) of thermal reistances for Simulation 2. . . . . . . . . . . . . 105 3.3 Values of thermal resistances for Simulation 3. . . . . . . . . . . . . . . 106 3.4 Values of thermal resistances for Simulation 6. . . . . . . . . . . . . . . 115 A.1 Parameters of reference thermal impedance curves, created using [12]. . 125 A.2a Identified resistances for the curve n o 1 with one Simplex pass. . . . . . 126 A.2b Identified capacitances for the curve n o 1 with one Simplex pass. . . . . 127 A.2c Relative error for N amount of RC pairs for the curve n o 1. 1 st and 2 nd Simplex pass. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 A.2d Relative error for N amount of RC pairs for the curve n o 2. 1 st and 2 nd Simplex pass. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 A.2e Relative error for N amount of RC pairs for the curve n o 3. 1 st and 2 nd Simplex pass. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 A.2f Relative error for N amount of RC pairs for the curve n o 4. 1 st and 2 nd Simplex pass. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 A.3a Relative error for N amount of RC pairs for the curve n o 1. 1 st and 2 nd Simplex pass. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 xiii
Page 1: Tesi di Dottorato Università degli
Page 5 and 6: Preface Thermal interactions set a
Page 7 and 8: Contents v 3.2.2 Processing . . . .
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Page 11 and 12: List of Figures ix 3.20 Selecting "
Page 13: List of Figures xi 3.57 Fourth prep
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APPENDIX A Design of efficient opti
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Appendix A. Design of efficient opt
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List of publications ⋆ F. M. De P
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Bibliography 139 [8] B. Jagannathan
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Bibliography 141 ii. a novel analys
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Bibliography 143 [50] C. C. McAndre
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Development of a New Electro-thermal Simulation Tool for RF circuits

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