Development of a New Electro-thermal Simulation Tool for RF circuits

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xiv List of Tables A.3b Relative error for N amount of RC pairs for the curve n o 2. 1 st and 2 nd Simplex pass. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 A.3c Relative error for N amount of RC pairs for the curve n o 3. 1 st and 2 nd Simplex pass. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 A.3d Relative error for N amount of RC pairs for the curve n o 4. 1 st and 2 nd Simplex pass. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 A.4 Comparison between identification methods for the curve in Fig. A.4 with distant thermal time constants. . . . . . . . . . . . . . . . . . . . 132
CHAPTER 1 The relevance of the electro-thermal phenomena Thermal problems in electronics have become one of the highest importance due to several technological trends, which contribute to consider thermal aspects in a reliable, modern electronic design. Following the well-known Moore’s law1 [15], the enhanced device integration pursued in order to favour high current capability and higher operation speed, has led to a steady increase (Fig. 1.1) in power density [1, 16], which in consequence contributes Figure 1.1: Power density on-chip trend. Source: [1]. to even higher device/system operational temperature [17]. As an example, the scaling 1 the number of transistors per chip double every 24 months 1
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Page 5 and 6: Preface Thermal interactions set a
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APPENDIX A Design of efficient opti
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Appendix A. Design of efficient opt
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List of publications ⋆ F. M. De P
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Bibliography 139 [8] B. Jagannathan
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Bibliography 141 ii. a novel analys
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Bibliography 143 [50] C. C. McAndre
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Development of a New Electro-thermal Simulation Tool for RF circuits

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