the disruptive semiconductor technologies magazine - I-Micronews

More documents

Recommendations

Info

OCTOBER 2010 issue n°100 THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE Register Today to explore “Innovations in High Density Flowcell Etching” Wednesday, October 13 8:00 AM PDT NEW LIVE WEBCAST Next Generation Flowcells: Advanced Fabrication and Packaging Solutions Moderator & Speakers: Frédéric Breussin Yole Développement Join our panel of experts, led by Frédéric Breussin of Yole Développement to discuss these critical issues. • Genomics companies are pursuing a cost per sequencing curve that can only be achieved with higher data density from flowcells. Wilbur Catabay SVTC Technologies • Higher data density requires finer geometries in surface patterning as well as improved surface chemistry. • Semiconductor tools, process integration know-how and understanding the properties of the materials used in fabricating and assembling flowcells are required to maintain the density curve. Chip Spangler Aspen Technologies Copyrights © Yole Développement SA. All rights reserved - Recycled paper For FREE REGISTRATION, please go to i-micronews, webcast section or click here. Hosted by Sponsored by Partners Michael Grimes Applied Microstructures 12
OCTOBER 2010 issue n°100 THE DISRUPTIVE SEMICONDUCTOR TECHNOLOGIES MAGAZINE COMPOUND SEMICONDUCTORS Sony releases 400mW-output blue-violet laser diode for blu-ray disc Sony Corp released the "SLD3237VF," a new blue-violet laser diode expected to be used for recording and playing Blu-ray discs. It features a pulsed output as high as 400mW and supports "BDXL," a new standard for largecapacity Blu-ray discs. According to Sony, the SLD3237VF is the industry's first blue-violet laser diode that has an output of 400mW or higher. The high output allows to use a wider variety of optical components such as lenses and prisms and, thus, to design hardware more freely. To realize the high output, innovative technologies are necessary to prevent the end face of a laser resonator from being melted by the heat from laser (a phenomenon called "catastrophic optical damage" (COD)) and to enhance the crystal quality of GaN crystal, which is a constituent material for ensuring a high reliability, the company said. This time, Sony newly developed an end-face coating material and a film forming method and succeeded in heightening the optical output level that causes COD, compared with that of the company's 300mW-class laser diode. Moreover, to improve the crystal quality, Sony developed new MOCVD crystal growth equipment that is optimized for producing GaN materials. The equipment can grow crystals on multiple substrates at the same time and deal with a future increase in the demand for laser diodes used for Blu-ray discs, the company said. Furthermore, Sony developed a process and processing equipment that realize a high production efficiency in the process of processing wafers, which follows the crystal growth process. The SLD3237VF is mounted in a standard package with a diameter of 5.6mm. Its operating temperature range is from 0 to 85°C. The "SLD3237VF" with an output of 400mW (left) and the "SLD3237VFR" with an output of 350mW. This time, Sony also released the "SLD3237VFR," which has a pulsed output of 350mW and is mounted in a package with a diameter of 3.8mm. Its operating temperature range is from 0 to 90°C. www.sony.net Dow Corning to produce 100mm Silicon Carbide epitaxy Dow Corning announced that it will begin production of 100mm SiC epitaxy, providing a single source for SiC substrates used in power electronics device manufacturing. The new product expands Dow Corning’s product line beyond its existing offerings of 76mm SiC wafers and epitaxy and 100 mm SiC wafers. Dow Corning supplies SiC and silicone materials that can be used in high power applications such as hightech communications, solar and wind energy systems, large scale electrical distribution grids, vehicles, and academic research. "We are committed to supporting the success of our customers by developing products that enhance performance while being cost effective," said Fred Buether, Commercial Manager, Dow Corning Compound Semiconductor Solutions. "Dow Corning is committed to continuing its leadership in supplying materials solutions to a broad cross section of the global electronics industry. Our global expertise and collaborative approach enable us to deliver solutions that reliably perform, time after time." www.dowcorning.com UCSB researchers claim semi-polar nitride light extraction comparable to conventional LEDs Researchers at the University of California Santa Barbara report substantial improvement in the extraction efficiency of LEDs grown on semi-polar nitride substrates. The researchers claim that the efficiency's are comparable to those of conventional c-plane devices. The findings were published in Applied Physics Express. At a drive current of 20mA, the devices emitted SETI drives single chip germicidal UV LED optical output power to a record 100mW Sensor Electronic Technology Inc (SETI) says that, in its continuing program to develop UV LEDs for germicidal applications, it has achieved single chip constant current performance of 100mW in the germicidal wavelength range. According to the firm, this achievement exceeds the record for maximum optical power out of a single chip device of this type. SETI says that although this level of single chip performance is not yet available in its production LEDs, high power UV LED lamps are available under the UVCLEAN trademark with germicidal powers up to 50mW. “High power UV LEDs are essential to achieve the level of disinfection required in point-of-use and point-of-entry water treatment systems,” said Remis Gaska, president and CEO of SETI. “This ongoing development of large area high power UV LEDs will help to reduce the price per milliwatt and allow UV LEDs to enter cost sensitive disinfection markets.” 31.1mW, with external quantum efficiency (EQE) of 54.7%. Researchers expect non-polar and semi-polar nitride materials to produce improved efficiency LEDs because of reduced spontaneous and straindependent (piezoelectric) polarization fields. These polarization fields tend to pull electrons and holes apart in the light-emitting active region, thus reducing the chances of recombination occurring as photons. www.ucsb.edu The firm announced that it had been awarded a $475,000 Small Business Innovation Research (SBIR) Phase II award from the US National Science Foundation (NSF) to develop point-of-use (POU) drinking water disinfection systems based on deep ultraviolet LEDs (DUV LEDs). www.s-et.com Copyrights © Yole Développement SA. All rights reserved - Recycled paper 13
Page 1 and 2: THE DISRUPTIVE SEMICONDUCTOR TECHNO
Page 3 and 4: THE DISRUPTIVE SEMICONDUCTOR TECHNO
Page 5 and 6: OCTOBER 2010 issue n°100 THE DISRU
Page 7 and 8: THE DIS RUPTI VE SEMICONDUCTOR TECH
Page 13: OCTOBER 2010 issue n°100 THE DISRU
Page 19 and 20: Surface cleaning > Wet cleaning Saw
Page 25: Kongsberg OCTOBER 2010 issue n°100

the disruptive semiconductor technologies magazine - I-Micronews

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?