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DEPFET Pixel Vertex Detector for the ILC - MPG HLL

DEPFET Pixel Vertex Detector for the ILC - MPG HLL

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chip (see Fig. 24) has been fabricated using a 0.25µm process. Radiation<br />

tolerance <strong>for</strong> <strong>the</strong> dose expected at <strong>the</strong> <strong>ILC</strong> is <strong>the</strong>re<strong>for</strong>e not considered to be<br />

a critical issue.<br />

channel i<br />

(I ped<br />

+ I sig<br />

) or I ped<br />

I sig<br />

cascode<br />

I sig<br />

storage:<br />

I ped<br />

+ I sig<br />

current<br />

buffer A<br />

current<br />

buffer B<br />

ANALOG - Channel<br />

current<br />

compare<br />

Mixed Signal FIFO<br />

analog<br />

FIFO<br />

cells<br />

1/0<br />

Output MUX<br />

outA<br />

outB<br />

Hit-Finder<br />

DIGITAL - Part<br />

HIT-RAM<br />

hit-address<br />

serial-out<br />

Figure 23: Architecture of <strong>the</strong> CURO readout chip (see text)<br />

The hit detection and zero suppression (i.e. <strong>the</strong> digital part) has been<br />

operated successfully at more than 100 MHz. The analog part (double correlated<br />

sampling, current comparison) has been tested up to a row rate of<br />

25 MHz with a sufficient accuracy. The intrinsic noise contribution of <strong>the</strong><br />

sampling in <strong>the</strong> chip at this speed has been measured to 45 nA in perfect<br />

agreement with <strong>the</strong> calculated value. For <strong>the</strong> present <strong>DEPFET</strong> devices with<br />

a charge to current gain of up to g q ≈ 500 pA/ e − , this translates to a noise<br />

contribution of <strong>the</strong> fast readout of ENC = 90 e − .<br />

3.3.3 Radiation Tolerance of <strong>the</strong> Chips<br />

The radiation tolerance of <strong>the</strong> CURO and SWITCHER chips has not yet<br />

been tested. An irradiation of <strong>the</strong> chips at <strong>the</strong> CaliFa facility in Munich is<br />

presently being prepared.<br />

25

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