DEPFET Pixel Vertex Detector for the ILC - MPG HLL
DEPFET Pixel Vertex Detector for the ILC - MPG HLL
DEPFET Pixel Vertex Detector for the ILC - MPG HLL
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chip (see Fig. 24) has been fabricated using a 0.25µm process. Radiation<br />
tolerance <strong>for</strong> <strong>the</strong> dose expected at <strong>the</strong> <strong>ILC</strong> is <strong>the</strong>re<strong>for</strong>e not considered to be<br />
a critical issue.<br />
channel i<br />
(I ped<br />
+ I sig<br />
) or I ped<br />
I sig<br />
cascode<br />
I sig<br />
storage:<br />
I ped<br />
+ I sig<br />
current<br />
buffer A<br />
current<br />
buffer B<br />
ANALOG - Channel<br />
current<br />
compare<br />
Mixed Signal FIFO<br />
analog<br />
FIFO<br />
cells<br />
1/0<br />
Output MUX<br />
outA<br />
outB<br />
Hit-Finder<br />
DIGITAL - Part<br />
HIT-RAM<br />
hit-address<br />
serial-out<br />
Figure 23: Architecture of <strong>the</strong> CURO readout chip (see text)<br />
The hit detection and zero suppression (i.e. <strong>the</strong> digital part) has been<br />
operated successfully at more than 100 MHz. The analog part (double correlated<br />
sampling, current comparison) has been tested up to a row rate of<br />
25 MHz with a sufficient accuracy. The intrinsic noise contribution of <strong>the</strong><br />
sampling in <strong>the</strong> chip at this speed has been measured to 45 nA in perfect<br />
agreement with <strong>the</strong> calculated value. For <strong>the</strong> present <strong>DEPFET</strong> devices with<br />
a charge to current gain of up to g q ≈ 500 pA/ e − , this translates to a noise<br />
contribution of <strong>the</strong> fast readout of ENC = 90 e − .<br />
3.3.3 Radiation Tolerance of <strong>the</strong> Chips<br />
The radiation tolerance of <strong>the</strong> CURO and SWITCHER chips has not yet<br />
been tested. An irradiation of <strong>the</strong> chips at <strong>the</strong> CaliFa facility in Munich is<br />
presently being prepared.<br />
25