- Page 1: 16th European MBE 2011 Book of Abst
- Page 4 and 5: The Euro-MBE Workshop is held bienn
- Page 6 and 7: Invited speakers D. AS, Paderborn U
- Page 8: List of Exhibitors present on site,
- Page 11 and 12: Conference Program
- Page 13 and 14: MBE growth of LiMnAs Monday 10:30-1
- Page 15 and 16: Program of the 16th European Molecu
- Page 17: Tuesday 17:00-17:30 Tu3.1 (invited)
- Page 21: RHEED S T A I B INSTRUMENTS Powerfu
- Page 24 and 25: POSTER SESSION 1 Monday, March 21 s
- Page 26 and 27: POSTER SESSION 1 Monday, March 21 s
- Page 28 and 29: POSTER SESSION 1 MoP37 Monday, Marc
- Page 30 and 31: POSTER SESSION 2 Tuesday, March 22
- Page 32 and 33: POSTER SESSION 2 TuP28 TuP29 TuP30
- Page 35: TERRITORY Silicon Wafers, Ultrapure
- Page 38 and 39: Mo1.1 GaAs based nanostructures gro
- Page 40 and 41: Mo1.2 -3% +3% (a) (b) Fig 1: Refere
- Page 42 and 43: Mo1.3 (a) (b) Fig 1: XPS after the
- Page 44 and 45: Mo1.4 Capped QD height/Uncapped QD
- Page 46 and 47: Monday Session Mo2 Antimonides & Ph
- Page 48 and 49: Mo2.2 Growth and structural propert
- Page 50 and 51: Mo2.3 Comparison of interface prope
- Page 52 and 53: Mo2.4 MBE growth of (GaAsPN/GaPN)/G
- Page 54 and 55: Mo2.5 Lattice mismatch accommodatio
- Page 56 and 57: Mo2.6 Fig 1: Transmission SWBXRT to
- Page 58 and 59: Mo3.1 Making nitrides magnetic Albe
- Page 60 and 61: Mo3.3 Specialized MBE system for gr
- Page 62 and 63: Mo3.4 Fig 1: HRTEM images from (a)
- Page 64 and 65: Mo3.5 Fig. 1: AFM scan of the N-pol
- Page 67: Quadrupole Mass Spectrometers for M
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Tu1.1 Advances of dilute-nitrides M
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Tu1.3 MBE growth of high power Mode
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Tu1.5 Broadband emission and mode-l
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Tuesday Session Tu2 New trends in M
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Tu2.2 MBE of semiconducting oxides
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Tu2.3 Figure 1: a) symmetric XRD cu
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Tu2.4 Fig. 1: Cross-section Scannin
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Tu2.5 (a) (b) Fig 1: New II-VI DBR
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Tu3.1 Recent device applications of
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Tu3.2 Fig 1: PL emission dependence
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Tu3.3 2.61 average CTE = 4.1x10-6 1
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Tu3.4 3.200 Relaxed GaN 3.200 Relax
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Tu3.5 Intensity [arb. units] QW emi
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Tu3.6 Optical Power (mW) 40 30 20 L
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Wednesday Session We1 Group IV Mate
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We1.2 Epitaxial growth of SrTiO 3 o
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We1.3 Morphology and luminescence p
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We1.5 In situ STM and RHEED study o
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Wednesday Session We2 Devices
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We2.1 Fig. 1: (a) Cross-sectional T
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We2.3 Investigations of Si-dopant l
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Voltage (V) Output power (mW) Detec
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We2.5 Fig 1: Light output vs. curre
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Barrier Al 0,25Ga 0,51In 0,24As 0.2
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We3.1 Growth kinetics of III-V nano
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We3.3 AlAs-GaAs core-shell nanowire
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We3.4 (b) 1µm (a) (c) Fig 1: (a) T
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We3.6 Polarity of GaN nanowires gro
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Monday Poster Session
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MoP02 Sn doped GaAs by CBE using te
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MoP03 Early stages of the growth of
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MoP05 Optimization of MBE-grown AlS
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MoP06 Monolithic integration of InP
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MoP07 Crystal structure X-ray inves
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MoP08 FWHM 002 (arcsec) 500 400 300
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MoP10 Near infrared high efficiency
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MoP11 In-situ Reflectance Anisotrop
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MoP12 Effect of growth temperature
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MoP13 Investigation of the local el
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MoP15 A prototype of heterovalent i
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MoP16 Effect of growth temperature
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MoP17 Effect of different monolayer
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MoP18 Neutron reflectometry studies
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MoP20 Critical thickness of 2D-3D a
- Page 161 and 162:
MoP22 Mid-infrared Quantum Dot LEDs
- Page 163 and 164:
MoP23 High-quality structures of In
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MoP24 Diffraction intensity (a. u.)
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MoP25 Fig 1: Left: AFM image of an
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MoP26 Fig 1: (a) 100*76 nm² ST
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MoP28 Low Thermal Budget Fabricatio
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MoP30 Shape Changes in Patterned Pl
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MoP31 Influence of Al on the group
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MoP32 Fig 1 (a): Self consistent so
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MoP33 Fig.1 (a) SEM-image of extra
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MoP35 Scaling of quantum cascade la
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MoP37 Non polar GaN/ZnO heterostruc
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MoP39 Reproducible temperature cali
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TuP01 Fabrication and optical prope
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TuP02 Figure 1 Figure 2 Figure 3
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TuP04 A New Route for Strain relaxa
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TuP06 Annealing effects on site-sel
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TuP08 Study on homoepitaxial german
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TuP09 Fig 1: (a) Scanning transmiss
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TuP11 Different strategies towards
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TuP12 Capping effect on the morphol
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TuP13 As2Te3 AsHg Band to band AsHg
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TuP15 Metamorphic 6.3Å GaInSb temp
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TuP16 Reflection high-energy electr
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TuP17 Optical polarization from sel
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TuP18 The MBE growth of HgCdTe on C
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TuP20 GaN/AlN semipolar quantum dot
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TuP21 PL intensity (a.u.) reference
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TuP23 Ga blocking effect for GaN gr
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TuP25 II-VI nanostructures, with ty
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TuP26 Figure 2 (a)-(b): 3D view of
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TuP27 20 Ga = 4.9 [nm/min] Ga = 1.3
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TuP29 Quantum dot formation from su
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TuP30 Fig. 1: Scanning tunneling mi
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Concentration [cm -3 ] Intensity (a
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TuP32 Fig 1: Typical defects in GaP
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TuP33 Intensity [Arb. Units] Carbon
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TuP35 Synthesis of AlGaN nanowires
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TuP36 Fig 2:ZnSe NW grown at 400°C
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TuP38 Position controlled self-cata
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LIST OF PARTICIPANTS ALEKSANDROVA A
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GOBAUT Benoit, Ecole Centrale de Ly
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SIEKACZ Marcin, TopGaN Ltd. (POLAND
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Registration Lobby Hotel Pic Blanc