Book of abstracts - Euro-MBE 2011 - CNRS

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Invited speakers D. AS, Paderborn Univ. (Germany) Recent device applications of non-polar cubic group III-nitrides O. BIERWAGEN, Univ. California Santa Barbara (USA) MBE of semiconducting oxides A. BONANNI, Johannes Kepler Univ., Linz (Austria) Controlling and visualizing the distribution of transition metals in nitrides J.-M. CHAUVEAU, CRHEA-CNRS (France) Polar and nonpolar (Zn,Mg)O/ZnO heterostructures : the benefits of homoepitaxy M. EIBELHUBER, Johannes Kepler Univ., Linz (Austria) MBE growth of IV-VI quantum dots F. FURTMAYR, Walter Schottky Institut, Munich (Germany) Optical and structural properties of III-Nitride nanowires and nanowire heterostructures F. GLAS, LPN-CNRS (France) Growth kinetics of III-V nanowires M. GUINA, Tampere Univ. of Technology (Finland) Recent advances in MBE of dilute-nitrides and related device applications V. NOVAK, Institute of Physics ASCR, Prague (Czech Rep.) MBE growth of LiMnAs J.-B. RODRIGUEZ, Univ. Montpellier 2 (France) Current developments in MBE growth of highly mismatched materials S. SANGUINETTI, Univ. degli Studi Milano-Bicocca (Italy) GaAs based nanostructures grown by droplet epitaxy T. WIETLER, Leibniz Univ. Hannover (Germany) Surfactant-modified epitaxy of germanium layers on silicon for high mobility channels
Sponsors http://www.home.agilent.com/ http://www.omicron.de/ http://www.azeliselectronics.com/ http://www.riber.com/ http://rta-instruments.com/ http://www.dca.fi/ http://eurotherm.com/ http://www.staibinstruments.com/ http://www.hidenanalytical.com/ http://www.surface-tec.com/ / http://www.mbe-kompo.de/ http://www.vbseurope.com/ http://www.oerlikon.com/leyboldvacuum/ http://www.veeco.com/ http://www.vinci-technologies.com/ http://www.rhonealpes.fr/ http://www.fondation-nanosciences.fr/
Page 1: 16th European MBE 2011 Book of Abst
Page 4 and 5: The Euro-MBE Workshop is held bienn
Page 8: List of Exhibitors present on site,
Page 11 and 12: Conference Program
Page 13 and 14: MBE growth of LiMnAs Monday 10:30-1
Page 15 and 16: Program of the 16th European Molecu
Page 17 and 18: Tuesday 17:00-17:30 Tu3.1 (invited)
Page 19 and 20: Wednesday 11:00-11:30 We2.1 (invite
Page 21: RHEED S T A I B INSTRUMENTS Powerfu
Page 24 and 25: POSTER SESSION 1 Monday, March 21 s
Page 26 and 27: POSTER SESSION 1 Monday, March 21 s
Page 28 and 29: POSTER SESSION 1 MoP37 Monday, Marc
Page 30 and 31: POSTER SESSION 2 Tuesday, March 22
Page 32 and 33: POSTER SESSION 2 TuP28 TuP29 TuP30
Page 35: TERRITORY Silicon Wafers, Ultrapure
Page 38 and 39: Mo1.1 GaAs based nanostructures gro
Page 40 and 41: Mo1.2 -3% +3% (a) (b) Fig 1: Refere
Page 42 and 43: Mo1.3 (a) (b) Fig 1: XPS after the
Page 44 and 45: Mo1.4 Capped QD height/Uncapped QD
Page 46 and 47: Monday Session Mo2 Antimonides & Ph
Page 48 and 49: Mo2.2 Growth and structural propert
Page 50 and 51: Mo2.3 Comparison of interface prope
Page 52 and 53: Mo2.4 MBE growth of (GaAsPN/GaPN)/G
Page 54 and 55: Mo2.5 Lattice mismatch accommodatio
Page 56 and 57:
Mo2.6 Fig 1: Transmission SWBXRT to
Page 58 and 59:
Mo3.1 Making nitrides magnetic Albe
Page 60 and 61:
Mo3.3 Specialized MBE system for gr
Page 62 and 63:
Mo3.4 Fig 1: HRTEM images from (a)
Page 64 and 65:
Mo3.5 Fig. 1: AFM scan of the N-pol
Page 67:
Quadrupole Mass Spectrometers for M
Page 70 and 71:
Tu1.1 Advances of dilute-nitrides M
Page 72 and 73:
Tu1.3 MBE growth of high power Mode
Page 74 and 75:
Tu1.5 Broadband emission and mode-l
Page 76 and 77:
Tuesday Session Tu2 New trends in M
Page 78 and 79:
Tu2.2 MBE of semiconducting oxides
Page 80 and 81:
Tu2.3 Figure 1: a) symmetric XRD cu
Page 82 and 83:
Tu2.4 Fig. 1: Cross-section Scannin
Page 84 and 85:
Tu2.5 (a) (b) Fig 1: New II-VI DBR
Page 86 and 87:
Tu3.1 Recent device applications of
Page 88 and 89:
Tu3.2 Fig 1: PL emission dependence
Page 90 and 91:
Tu3.3 2.61 average CTE = 4.1x10-6 1
Page 92 and 93:
Tu3.4 3.200 Relaxed GaN 3.200 Relax
Page 94 and 95:
Tu3.5 Intensity [arb. units] QW emi
Page 96 and 97:
Tu3.6 Optical Power (mW) 40 30 20 L
Page 99 and 100:
Wednesday Session We1 Group IV Mate
Page 101 and 102:
We1.2 Epitaxial growth of SrTiO 3 o
Page 103 and 104:
We1.3 Morphology and luminescence p
Page 105 and 106:
We1.5 In situ STM and RHEED study o
Page 107 and 108:
Wednesday Session We2 Devices
Page 109 and 110:
We2.1 Fig. 1: (a) Cross-sectional T
Page 111 and 112:
We2.3 Investigations of Si-dopant l
Page 113 and 114:
Voltage (V) Output power (mW) Detec
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We2.5 Fig 1: Light output vs. curre
Page 117 and 118:
Barrier Al 0,25Ga 0,51In 0,24As 0.2
Page 119 and 120:
We3.1 Growth kinetics of III-V nano
Page 121 and 122:
We3.3 AlAs-GaAs core-shell nanowire
Page 123 and 124:
We3.4 (b) 1µm (a) (c) Fig 1: (a) T
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We3.6 Polarity of GaN nanowires gro
Page 129 and 130:
Monday Poster Session
Page 131 and 132:
MoP02 Sn doped GaAs by CBE using te
Page 133 and 134:
MoP03 Early stages of the growth of
Page 135 and 136:
MoP05 Optimization of MBE-grown AlS
Page 137 and 138:
MoP06 Monolithic integration of InP
Page 139 and 140:
MoP07 Crystal structure X-ray inves
Page 141 and 142:
MoP08 FWHM 002 (arcsec) 500 400 300
Page 143 and 144:
MoP10 Near infrared high efficiency
Page 145 and 146:
MoP11 In-situ Reflectance Anisotrop
Page 147 and 148:
MoP12 Effect of growth temperature
Page 149 and 150:
MoP13 Investigation of the local el
Page 151 and 152:
MoP15 A prototype of heterovalent i
Page 153 and 154:
MoP16 Effect of growth temperature
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MoP17 Effect of different monolayer
Page 157 and 158:
MoP18 Neutron reflectometry studies
Page 159 and 160:
MoP20 Critical thickness of 2D-3D a
Page 161 and 162:
MoP22 Mid-infrared Quantum Dot LEDs
Page 163 and 164:
MoP23 High-quality structures of In
Page 165 and 166:
MoP24 Diffraction intensity (a. u.)
Page 167 and 168:
MoP25 Fig 1: Left: AFM image of an
Page 169 and 170:
MoP26 Fig 1: (a) 100*76 nm² ST
Page 171 and 172:
MoP28 Low Thermal Budget Fabricatio
Page 173 and 174:
MoP30 Shape Changes in Patterned Pl
Page 175 and 176:
MoP31 Influence of Al on the group
Page 177 and 178:
MoP32 Fig 1 (a): Self consistent so
Page 179 and 180:
MoP33 Fig.1 (a) SEM-image of extra
Page 181 and 182:
MoP35 Scaling of quantum cascade la
Page 183 and 184:
MoP37 Non polar GaN/ZnO heterostruc
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MoP39 Reproducible temperature cali
Page 190 and 191:
TuP01 Fabrication and optical prope
Page 192 and 193:
TuP02 Figure 1 Figure 2 Figure 3
Page 194 and 195:
TuP04 A New Route for Strain relaxa
Page 196 and 197:
TuP06 Annealing effects on site-sel
Page 198 and 199:
TuP08 Study on homoepitaxial german
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TuP09 Fig 1: (a) Scanning transmiss
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TuP11 Different strategies towards
Page 204 and 205:
TuP12 Capping effect on the morphol
Page 206 and 207:
TuP13 As2Te3 AsHg Band to band AsHg
Page 208 and 209:
TuP15 Metamorphic 6.3Å GaInSb temp
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TuP16 Reflection high-energy electr
Page 212 and 213:
TuP17 Optical polarization from sel
Page 214 and 215:
TuP18 The MBE growth of HgCdTe on C
Page 216 and 217:
TuP20 GaN/AlN semipolar quantum dot
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TuP21 PL intensity (a.u.) reference
Page 220 and 221:
TuP23 Ga blocking effect for GaN gr
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TuP25 II-VI nanostructures, with ty
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TuP26 Figure 2 (a)-(b): 3D view of
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TuP27 20 Ga = 4.9 [nm/min] Ga = 1.3
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TuP29 Quantum dot formation from su
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TuP30 Fig. 1: Scanning tunneling mi
Page 232 and 233:
Concentration [cm -3 ] Intensity (a
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TuP32 Fig 1: Typical defects in GaP
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TuP33 Intensity [Arb. Units] Carbon
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TuP35 Synthesis of AlGaN nanowires
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TuP36 Fig 2:ZnSe NW grown at 400°C
Page 242 and 243:
TuP38 Position controlled self-cata
Page 245 and 246:
LIST OF PARTICIPANTS ALEKSANDROVA A
Page 247 and 248:
GOBAUT Benoit, Ecole Centrale de Ly
Page 249:
SIEKACZ Marcin, TopGaN Ltd. (POLAND
Page 252:
Registration Lobby Hotel Pic Blanc
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