Book of abstracts - Euro-MBE 2011 - CNRS
Book of abstracts - Euro-MBE 2011 - CNRS
Book of abstracts - Euro-MBE 2011 - CNRS
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Mo2.3<br />
In content (%)<br />
40<br />
30<br />
20<br />
10<br />
0<br />
Exp.<br />
Sim.<br />
growth direction<br />
L lower<br />
= 1.35 ML<br />
L upper<br />
= 1.35 ML<br />
20 40 60 80<br />
Position (ML)<br />
Fig 1: Experimentally determined In pr<strong>of</strong>ile for a (In,Ga)As/GaAs QW grown on GaAs(001) in the 2D<br />
island nucleation mode. Solid line: simulated pr<strong>of</strong>ile where the interfaces are defined by a sigmoidal<br />
function. L lower and L upper denote the width <strong>of</strong> the lower and upper interface, respectively.<br />
In content (%)<br />
30<br />
25<br />
20<br />
15<br />
10<br />
5<br />
(b)<br />
Exp.<br />
Sim.<br />
growth direction<br />
L lower<br />
= 2.6 ML<br />
L upper<br />
= 4.2 ML<br />
0<br />
-60 -40 -20 0 20 40 60<br />
Position (ML)<br />
Fig 2: (a) g 002 DF TEM micrograph <strong>of</strong> a (In,Ga)As/GaAs QW on GaAs(111)B, which has been grown in the step flow<br />
mode. (b) Experimental In distribution and simulated pr<strong>of</strong>ile, where the interfaces are defined by a sigmoidal function<br />
30<br />
Exp.<br />
Sim.<br />
L lower<br />
= 1.8 ML<br />
L upper<br />
= 1.8 ML<br />
In content (%)<br />
20<br />
10<br />
growth direction<br />
0<br />
-20 0 20<br />
Position (ML)<br />
Fig 3: Experimentally determined In pr<strong>of</strong>ile for a (In,Ga)As/GaAs QW grown on GaAs(001) by SPE<br />
and simulated pr<strong>of</strong>ile, where the interfaces are defined by a sigmoidal function.
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