Book of abstracts - Euro-MBE 2011 - CNRS

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Mo2.2 Growth and structural properties of InSb-based heterostructures A.N. Semenov, B.Ya. Meltser, V.A. Solov'ev, T.A. Komissarova, Ya.V. Teren't'ev, A.A. Sitnikova, and S.V. Ivanov Ioffe Physical-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia Among III-V semiconductors, indium antimonide has the narrowest band gap and the smallest effective electron mass that results in a record value of room-temperature electron mobility in bulk InSb layer as well as 2D electron gas (2DEG). This makes InSb a very attractive material for new generation of high speed devices like a high electron mobility transistor (HEMT) [1] and IR photodetectors [2]. Al x In 1-x Sb alloys can be used as barriers for the InSb QW heterostructures but Al content is limited by x~0.2 due to abrupt increase of the stress in high Al-content alloys grown on InSb. This paper reports on MBE growth, structural, optical, and transport properties of InSb, Al x In 1-x Sb (0≤x≤0.3) and their QW heterostructures. All the structures were grown on semi-insulated GaAs substrates using RIBER 32P setup equipped with conventional solid source effusion cells for Al, In and Sb 4 . Substrate temperature T S was varied in the 380–550°С range and measured by an IR pyrometer calibrated using well-known surface reconstruction transitions on GaAs, monitored in situ by reflection high energy electron diffraction (RHEED). The mobility and carrier concentration were determined using Hall effect measurements at temperatures 77 and 300 K. X-ray diffraction, transmission and scanning electron microscopy (TEM and SEM), scanning probe microscopy and photoluminescence (PL) were employed for structural and optical characterization of the InSb-based samples. PL spectra were measured only for AlInSb alloys because the nitrogen-cooled InSb photodiode was used as a detector. Due to the absence of InSb semi-insulated (SI) substrates the InSb/AlInSb 2DEG QW heterostructures should be grown on strongly lattice-mismatched SI substrates of GaAs (Δa/a=14.6%). To prevent the Sb evaporation induced by the giant mismatch we employed intermediate AlSb buffer layer which is characterized by much higher dissociation temperature and lower Δa/a=7%. Moreover, it was found that growth of Sb-based compounds on GaAs substrates is improved in case of exposure of the GaAs surface to the Sb 4 flux. The RHEED pattern during this procedure changes from (2×4) for As-stabilised surface to (2×8) one (Fig. 1) inherent to GaAs surface covered by a 1-ML-thick GaSb layer [3]. This GaSb layer promotes transition to the 2D growth mode during initial stage of AlSb growth. The perfect streaky (1×3)Sb RHEED pattern is observed after growth of 40 nm AlSb. The initiation of the AlSb growth at low temperatures (480°С) leads to the formation of high density of stacking faults and microtwins (Fig.2a). Such defects could lead to the strong anisotropy of transport properties of 2DEG heterostructures [8]. The higher AlSb growth temperature (T S ~520°С) results in suppression of microtwins formation at the AlSb/GaAs heterointerface while preserves the 1ML-GaSb coverage. The microtwins formation then takes place only at the AlSb/AlInSb heterointerface grown at low temperature inevitably (Fig. 2b), but their density is at least 5 times lower as compared with heterostructures grown atop of the low-temperature AlSb layer. Further optimization of the buffer structures, including inserting the thin InSb layers as well as the InSb/AlInSb strained superlattices (SL), allowed us to reduce the dislocation density around the top InSb QWs by two orders of magnitude. The room-temperature electron mobility and concentration in 1-μm-thick InSb/GaAs heteroepitaxial layers were measured as 52 000 cm2/V×s and 3×10 16 cm -3 , respectively. In the case of AlInSb epilayers, concentration and mobility values were found to depend strongly on Al content. Based on these findings, the InSb/AlInSb 2DEG QW heterostructures were grown. The room-temperature electron concentration and mobility in the InSb channel were as high as 3.6×10 12 cm -2 and 20 500 cm 2 /V×s, respectively. We believe that optimization of the InSb/AlInSb heterostructure design and improving the quality of heterointerfaces will enable one to improve characteristics of InSb 2DEG. This work is supported by the Russian Foundation for Basic Research Project #09-02-01500 [1] T. Ashley, L. Buckle, S. Dutta et al. Electron. Lett. 43, (2007) 777. [2] Patrick J. Treado, Ira W. Levin, and E. Neil Lewis Applied Spectroscopy 48, (1994) 607. [3] L.J. Whitman, B.R. Bennett, E.M. Kneedler et al. Surface Science 436 (1999) L707. [4] J.B. Boos, B.R. Bennett, W. Kruppa et al. Sol. St. Electron. 47, 181 (2003)
Mo2.2 011 0ī1 Fig. 1. (2×8) RHEED pattern during antimony exposure of GaAs surface (T S = 480°C) 011 a AlInSb AlInSb AlSb GaAs b Fig. 2 Cross-section TEM images of GaAs/AlSb/AlInSb heterostructures: a) AlSb grown at Ts ~ 480°Ñ, b) AlSb grown at Ts ~ 510°Ñ. __________________________ * Contact: semenov@beam.ioffe.ru AlSb
Page 1: 16th European MBE 2011 Book of Abst
Page 4 and 5: The Euro-MBE Workshop is held bienn
Page 6 and 7: Invited speakers D. AS, Paderborn U
Page 8: List of Exhibitors present on site,
Page 11 and 12: Conference Program
Page 13 and 14: MBE growth of LiMnAs Monday 10:30-1
Page 15 and 16: Program of the 16th European Molecu
Page 17 and 18: Tuesday 17:00-17:30 Tu3.1 (invited)
Page 19 and 20: Wednesday 11:00-11:30 We2.1 (invite
Page 21: RHEED S T A I B INSTRUMENTS Powerfu
Page 24 and 25: POSTER SESSION 1 Monday, March 21 s
Page 26 and 27: POSTER SESSION 1 Monday, March 21 s
Page 28 and 29: POSTER SESSION 1 MoP37 Monday, Marc
Page 30 and 31: POSTER SESSION 2 Tuesday, March 22
Page 32 and 33: POSTER SESSION 2 TuP28 TuP29 TuP30
Page 35: TERRITORY Silicon Wafers, Ultrapure
Page 38 and 39: Mo1.1 GaAs based nanostructures gro
Page 40 and 41: Mo1.2 -3% +3% (a) (b) Fig 1: Refere
Page 42 and 43: Mo1.3 (a) (b) Fig 1: XPS after the
Page 44 and 45: Mo1.4 Capped QD height/Uncapped QD
Page 46 and 47: Monday Session Mo2 Antimonides & Ph
Page 50 and 51: Mo2.3 Comparison of interface prope
Page 52 and 53: Mo2.4 MBE growth of (GaAsPN/GaPN)/G
Page 54 and 55: Mo2.5 Lattice mismatch accommodatio
Page 56 and 57: Mo2.6 Fig 1: Transmission SWBXRT to
Page 58 and 59: Mo3.1 Making nitrides magnetic Albe
Page 60 and 61: Mo3.3 Specialized MBE system for gr
Page 62 and 63: Mo3.4 Fig 1: HRTEM images from (a)
Page 64 and 65: Mo3.5 Fig. 1: AFM scan of the N-pol
Page 67: Quadrupole Mass Spectrometers for M
Page 70 and 71: Tu1.1 Advances of dilute-nitrides M
Page 72 and 73: Tu1.3 MBE growth of high power Mode
Page 74 and 75: Tu1.5 Broadband emission and mode-l
Page 76 and 77: Tuesday Session Tu2 New trends in M
Page 78 and 79: Tu2.2 MBE of semiconducting oxides
Page 80 and 81: Tu2.3 Figure 1: a) symmetric XRD cu
Page 82 and 83: Tu2.4 Fig. 1: Cross-section Scannin
Page 84 and 85: Tu2.5 (a) (b) Fig 1: New II-VI DBR
Page 86 and 87: Tu3.1 Recent device applications of
Page 88 and 89: Tu3.2 Fig 1: PL emission dependence
Page 90 and 91: Tu3.3 2.61 average CTE = 4.1x10-6 1
Page 92 and 93: Tu3.4 3.200 Relaxed GaN 3.200 Relax
Page 94 and 95: Tu3.5 Intensity [arb. units] QW emi
Page 96 and 97: Tu3.6 Optical Power (mW) 40 30 20 L
Page 99 and 100:
Wednesday Session We1 Group IV Mate
Page 101 and 102:
We1.2 Epitaxial growth of SrTiO 3 o
Page 103 and 104:
We1.3 Morphology and luminescence p
Page 105 and 106:
We1.5 In situ STM and RHEED study o
Page 107 and 108:
Wednesday Session We2 Devices
Page 109 and 110:
We2.1 Fig. 1: (a) Cross-sectional T
Page 111 and 112:
We2.3 Investigations of Si-dopant l
Page 113 and 114:
Voltage (V) Output power (mW) Detec
Page 115 and 116:
We2.5 Fig 1: Light output vs. curre
Page 117 and 118:
Barrier Al 0,25Ga 0,51In 0,24As 0.2
Page 119 and 120:
We3.1 Growth kinetics of III-V nano
Page 121 and 122:
We3.3 AlAs-GaAs core-shell nanowire
Page 123 and 124:
We3.4 (b) 1µm (a) (c) Fig 1: (a) T
Page 125:
We3.6 Polarity of GaN nanowires gro
Page 129 and 130:
Monday Poster Session
Page 131 and 132:
MoP02 Sn doped GaAs by CBE using te
Page 133 and 134:
MoP03 Early stages of the growth of
Page 135 and 136:
MoP05 Optimization of MBE-grown AlS
Page 137 and 138:
MoP06 Monolithic integration of InP
Page 139 and 140:
MoP07 Crystal structure X-ray inves
Page 141 and 142:
MoP08 FWHM 002 (arcsec) 500 400 300
Page 143 and 144:
MoP10 Near infrared high efficiency
Page 145 and 146:
MoP11 In-situ Reflectance Anisotrop
Page 147 and 148:
MoP12 Effect of growth temperature
Page 149 and 150:
MoP13 Investigation of the local el
Page 151 and 152:
MoP15 A prototype of heterovalent i
Page 153 and 154:
MoP16 Effect of growth temperature
Page 155 and 156:
MoP17 Effect of different monolayer
Page 157 and 158:
MoP18 Neutron reflectometry studies
Page 159 and 160:
MoP20 Critical thickness of 2D-3D a
Page 161 and 162:
MoP22 Mid-infrared Quantum Dot LEDs
Page 163 and 164:
MoP23 High-quality structures of In
Page 165 and 166:
MoP24 Diffraction intensity (a. u.)
Page 167 and 168:
MoP25 Fig 1: Left: AFM image of an
Page 169 and 170:
MoP26 Fig 1: (a) 100*76 nm² ST
Page 171 and 172:
MoP28 Low Thermal Budget Fabricatio
Page 173 and 174:
MoP30 Shape Changes in Patterned Pl
Page 175 and 176:
MoP31 Influence of Al on the group
Page 177 and 178:
MoP32 Fig 1 (a): Self consistent so
Page 179 and 180:
MoP33 Fig.1 (a) SEM-image of extra
Page 181 and 182:
MoP35 Scaling of quantum cascade la
Page 183 and 184:
MoP37 Non polar GaN/ZnO heterostruc
Page 185:
MoP39 Reproducible temperature cali
Page 190 and 191:
TuP01 Fabrication and optical prope
Page 192 and 193:
TuP02 Figure 1 Figure 2 Figure 3
Page 194 and 195:
TuP04 A New Route for Strain relaxa
Page 196 and 197:
TuP06 Annealing effects on site-sel
Page 198 and 199:
TuP08 Study on homoepitaxial german
Page 200 and 201:
TuP09 Fig 1: (a) Scanning transmiss
Page 202 and 203:
TuP11 Different strategies towards
Page 204 and 205:
TuP12 Capping effect on the morphol
Page 206 and 207:
TuP13 As2Te3 AsHg Band to band AsHg
Page 208 and 209:
TuP15 Metamorphic 6.3Å GaInSb temp
Page 210 and 211:
TuP16 Reflection high-energy electr
Page 212 and 213:
TuP17 Optical polarization from sel
Page 214 and 215:
TuP18 The MBE growth of HgCdTe on C
Page 216 and 217:
TuP20 GaN/AlN semipolar quantum dot
Page 218 and 219:
TuP21 PL intensity (a.u.) reference
Page 220 and 221:
TuP23 Ga blocking effect for GaN gr
Page 222 and 223:
TuP25 II-VI nanostructures, with ty
Page 224 and 225:
TuP26 Figure 2 (a)-(b): 3D view of
Page 226 and 227:
TuP27 20 Ga = 4.9 [nm/min] Ga = 1.3
Page 228 and 229:
TuP29 Quantum dot formation from su
Page 230 and 231:
TuP30 Fig. 1: Scanning tunneling mi
Page 232 and 233:
Concentration [cm -3 ] Intensity (a
Page 234 and 235:
TuP32 Fig 1: Typical defects in GaP
Page 236 and 237:
TuP33 Intensity [Arb. Units] Carbon
Page 238 and 239:
TuP35 Synthesis of AlGaN nanowires
Page 240 and 241:
TuP36 Fig 2:ZnSe NW grown at 400°C
Page 242 and 243:
TuP38 Position controlled self-cata
Page 245 and 246:
LIST OF PARTICIPANTS ALEKSANDROVA A
Page 247 and 248:
GOBAUT Benoit, Ecole Centrale de Ly
Page 249:
SIEKACZ Marcin, TopGaN Ltd. (POLAND
Page 252:
Registration Lobby Hotel Pic Blanc
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