- Page 1: 16th European MBE 2011 Book of Abst
- Page 4 and 5: The Euro-MBE Workshop is held bienn
- Page 6 and 7: Invited speakers D. AS, Paderborn U
- Page 8: List of Exhibitors present on site,
- Page 11 and 12: Conference Program
- Page 13 and 14: MBE growth of LiMnAs Monday 10:30-1
- Page 15 and 16: Program of the 16th European Molecu
- Page 17 and 18: Tuesday 17:00-17:30 Tu3.1 (invited)
- Page 19 and 20: Wednesday 11:00-11:30 We2.1 (invite
- Page 21: RHEED S T A I B INSTRUMENTS Powerfu
- Page 24 and 25: POSTER SESSION 1 Monday, March 21 s
- Page 26 and 27: POSTER SESSION 1 Monday, March 21 s
- Page 28 and 29: POSTER SESSION 1 MoP37 Monday, Marc
- Page 30 and 31: POSTER SESSION 2 Tuesday, March 22
- Page 32 and 33: POSTER SESSION 2 TuP28 TuP29 TuP30
- Page 35: TERRITORY Silicon Wafers, Ultrapure
- Page 39 and 40: Mo1.2 Interfacial strains in InAs/A
- Page 41 and 42: Mo1.3 200 mm GaAs wafers by MBE on
- Page 43 and 44: Mo1.4 Tuning the size, strain and b
- Page 45 and 46: Mo1.5 InAs Quantum Dot Chains Grown
- Page 47 and 48: Mo2.1 MBE growth of LiMnAs Vít Nov
- Page 49 and 50: Mo2.2 011 0ī1 Fig. 1. (2×8) RHEED
- Page 51 and 52: Mo2.3 In content (%) 40 30 20 10 0
- Page 53 and 54: Mo2.4 Fig 1: (a) structure of
- Page 55 and 56: Mo2.6 Defects in MBE grown InAs/GaS
- Page 57 and 58: Monday Session Mo3 Nitrides
- Page 59 and 60: Mo3.2 Optical and structural proper
- Page 61 and 62: Mo3.4 Improved luminescence and the
- Page 63 and 64: Mo3.5 Group III-nitrides growth on
- Page 65: Mo3.6 MBE growth of GaN using in-si
- Page 69 and 70: Tuesday Session Tu1 Arsenides II
- Page 71 and 72: Tu1.2 Current-injection lasing in G
- Page 73 and 74: Tu1.4 1.55 µm lasers based on shap
- Page 75 and 76: Tu1.5 InGaAs QW 7nm 1nm InGaAs QW 1
- Page 77 and 78: Tu2.1 Current developments in MBE g
- Page 79 and 80: Tu2.3 MBE growth of the topological
- Page 81 and 82: Tu2.4 Atomic-scale mapping of quant
- Page 83 and 84: Tu2.5 II-VI-based microcavities for
- Page 85 and 86: Tuesday Session Tu3 Wide bandgap
- Page 87 and 88:
Tu3.2 Polar and nonpolar (Zn,Mg)O/Z
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Tu3.3 A bi-layer oxide buffer appro
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Tu3.4 GaN/AlGaN superlattices grown
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Tu3.5 Growth and Characterization o
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Tu3.6 InGaN laser diodes operating
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STANDARD EFFUSION CELLS ORGANIC MAT
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We1.1 Surfactant-modified epitaxy o
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We1.2 Fig.2 : Evolution of the in a
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We1.4 Growth of small-period Si/Ge
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We1.5 11.0ML 3.3ML Si 5.6ML Si 11.0
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We2.1 MBE growth of IV-VI quantum d
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We2.2 The role of doping scheme in
- Page 112 and 113:
We2.4 Short wavelength high power Q
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We2.5 MBE growth of InGaAs/GaAsSb b
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We2.6 Room temperature operation of
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Wednesday Session We3 Nanowires
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We3.2 InAs Quantum Dot Arrays Decor
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We3.4 Distinct nucleation and growt
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We3.5 Strain balanced technique for
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2010 Varian becomes a part of Agile
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MoP01 Post-heat treatment on the im
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MoP02 (a) (b) Fig.1: Hall measureme
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MoP04 Growth directions and structu
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MoP05 Fig.1: AFM measurements perfo
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MoP06 2/ (°) Normalized intensity
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MoP08 Structural and optical proper
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MoP09 Multifunctional Epitaxial Nan
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MoP10 Normalized EL intensity (arb.
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MoP11 Fig 1: RAS fingerprint of an
- Page 148 and 149:
MoP12 Normalized Intensity (a.u.) 1
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MoP14 Growth Optimization for InAs/
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MoP15 Fig 1: Arrhenius plot of ther
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Intensité lumineuse en u.a Intensi
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MoP17 Figures: (a) Fig. 1: Heterost
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MoP19 Surface Electronic Properties
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MoP21 Epitaxy and characterization
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MoP22 (b) (a) 100 nm (b) p-CdZnTe:N
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MoP24 Structural properties of InAl
- Page 166 and 167:
MoP25 Composition studies of site-c
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MoP26 Single InAs quantum dots morp
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MoP27 Investigations of growth kine
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Integrated PL intensity (arb. units
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MoP30 Occurrences 160 140 120 100 8
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MoP32 Ferromagnetic and transport p
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Self-assembled InP-nanoneedles grow
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MoP34 Selective growth of InP on pr
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MoP36 MBE growth of quantum-cascade
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MoP38 Emission of colloidal nano-cr
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Tuesday Poster Session
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TuP02 In-situ, real time Auger Moni
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TuP03 Optimisation of Unusual Quant
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TuP05 Nonpolar III-nitride microcav
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TuP07 Comparison of InAs quantum do
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TuP09 Correlating electronic and st
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TuP10 Growth and microstructure of
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TuP11 Figures Figure 1. First appro
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TuP13 Optical Signatures of Dopant
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TuP14 Optical properties of post-gr
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TuP15 Intensity (a.u.) 10 17 10 15
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TuP16 (a) (b) (c) (d) (e) (f) Fig 1
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TuP17 Fig.1 (a) AFM micrograph of a
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nitrogen flow [sccm] growth rate [n
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TuP21 MBE growth approaches for imp
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TuP22 Post-growth rapid thermal ann
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TuP24 Use of RHEED to optimize atom
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TuP26 Enhanced intermixing in Ge na
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TuP27 Influence of nitrogen flux on
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TuP28 Growth of metal Co/Ag superla
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TuP30 Reversible Nanofacetting and
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TuP31 Homoepitaxy and nitrogen dopi
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TuP32 Structural characterization o
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TuP33 An Auger Electron Analyzer Sy
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TuP34 MBE droplet epitaxy of InGaAs
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TuP36 Correlation of structural, ch
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TuP37 Optical and structural proper
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Laser-MBE UHV Cluster PLD Workstati
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COUPPEY Catherine, RIBER (FRANCE) C
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LYAMKINA Anna, Rzhanov Institute (R
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Veeco MBE: The element that takes y