Book of abstracts - Euro-MBE 2011 - CNRS

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16th European Molecular Beam Epitaxy Workshop Book of Abtracts March 20 – 23, 2011 Congress Center, Alpe d’Huez France
Page 1: 16th European MBE 2011 Book of Abst
Page 5 and 6: Organizing Committee Serge TATARENK
Page 7 and 8: Sponsors http://www.home.agilent.co
Page 10 and 11: Main locations for Euro-MBE 2011 A
Page 12 and 13: Program of the 16th European Molecu
Page 14 and 15: Making nitrides magnetic Monday 17:
Page 16 and 17: Tuesday 10:30-11:00 Tu2.1 (invited)
Page 18 and 19: Program of the 16th European Molecu
Page 20 and 21: Growth kinetics of III-V nanowires
Page 23 and 24: Poster sessions Monday & Tuesday
Page 25 and 26: POSTER SESSION 1 Monday, March 21 s
Page 27 and 28: POSTER SESSION 1 MoP28 MoP29 MoP30
Page 29 and 30: POSTER SESSION 2 Tuesday, March 22
Page 31 and 32: POSTER SESSION 2 Tuesday, March 22
Page 33: POSTER SESSION 2 Tuesday, March 22
Page 37 and 38: Monday Session Mo1 Arsenides I
Page 39 and 40: Mo1.2 Interfacial strains in InAs/A
Page 41 and 42: Mo1.3 200 mm GaAs wafers by MBE on
Page 43 and 44: Mo1.4 Tuning the size, strain and b
Page 45 and 46: Mo1.5 InAs Quantum Dot Chains Grown
Page 47 and 48: Mo2.1 MBE growth of LiMnAs Vít Nov
Page 49 and 50: Mo2.2 011 0ī1 Fig. 1. (2×8) RHEED
Page 51 and 52: Mo2.3 In content (%) 40 30 20 10 0
Page 53 and 54:
Mo2.4 Fig 1: (a) structure of
Page 55 and 56:
Mo2.6 Defects in MBE grown InAs/GaS
Page 57 and 58:
Monday Session Mo3 Nitrides
Page 59 and 60:
Mo3.2 Optical and structural proper
Page 61 and 62:
Mo3.4 Improved luminescence and the
Page 63 and 64:
Mo3.5 Group III-nitrides growth on
Page 65:
Mo3.6 MBE growth of GaN using in-si
Page 69 and 70:
Tuesday Session Tu1 Arsenides II
Page 71 and 72:
Tu1.2 Current-injection lasing in G
Page 73 and 74:
Tu1.4 1.55 µm lasers based on shap
Page 75 and 76:
Tu1.5 InGaAs QW 7nm 1nm InGaAs QW 1
Page 77 and 78:
Tu2.1 Current developments in MBE g
Page 79 and 80:
Tu2.3 MBE growth of the topological
Page 81 and 82:
Tu2.4 Atomic-scale mapping of quant
Page 83 and 84:
Tu2.5 II-VI-based microcavities for
Page 85 and 86:
Tuesday Session Tu3 Wide bandgap
Page 87 and 88:
Tu3.2 Polar and nonpolar (Zn,Mg)O/Z
Page 89 and 90:
Tu3.3 A bi-layer oxide buffer appro
Page 91 and 92:
Tu3.4 GaN/AlGaN superlattices grown
Page 93 and 94:
Tu3.5 Growth and Characterization o
Page 95 and 96:
Tu3.6 InGaN laser diodes operating
Page 97:
STANDARD EFFUSION CELLS ORGANIC MAT
Page 100 and 101:
We1.1 Surfactant-modified epitaxy o
Page 102 and 103:
We1.2 Fig.2 : Evolution of the in a
Page 104 and 105:
We1.4 Growth of small-period Si/Ge
Page 106 and 107:
We1.5 11.0ML 3.3ML Si 5.6ML Si 11.0
Page 108 and 109:
We2.1 MBE growth of IV-VI quantum d
Page 110 and 111:
We2.2 The role of doping scheme in
Page 112 and 113:
We2.4 Short wavelength high power Q
Page 114 and 115:
We2.5 MBE growth of InGaAs/GaAsSb b
Page 116 and 117:
We2.6 Room temperature operation of
Page 118 and 119:
Wednesday Session We3 Nanowires
Page 120 and 121:
We3.2 InAs Quantum Dot Arrays Decor
Page 122 and 123:
We3.4 Distinct nucleation and growt
Page 124 and 125:
We3.5 Strain balanced technique for
Page 127:
2010 Varian becomes a part of Agile
Page 130 and 131:
MoP01 Post-heat treatment on the im
Page 132 and 133:
MoP02 (a) (b) Fig.1: Hall measureme
Page 134 and 135:
MoP04 Growth directions and structu
Page 136 and 137:
MoP05 Fig.1: AFM measurements perfo
Page 138 and 139:
MoP06 2/ (°) Normalized intensity
Page 140 and 141:
MoP08 Structural and optical proper
Page 142 and 143:
MoP09 Multifunctional Epitaxial Nan
Page 144 and 145:
MoP10 Normalized EL intensity (arb.
Page 146 and 147:
MoP11 Fig 1: RAS fingerprint of an
Page 148 and 149:
MoP12 Normalized Intensity (a.u.) 1
Page 150 and 151:
MoP14 Growth Optimization for InAs/
Page 152 and 153:
MoP15 Fig 1: Arrhenius plot of ther
Page 154 and 155:
Intensité lumineuse en u.a Intensi
Page 156 and 157:
MoP17 Figures: (a) Fig. 1: Heterost
Page 158 and 159:
MoP19 Surface Electronic Properties
Page 160 and 161:
MoP21 Epitaxy and characterization
Page 162 and 163:
MoP22 (b) (a) 100 nm (b) p-CdZnTe:N
Page 164 and 165:
MoP24 Structural properties of InAl
Page 166 and 167:
MoP25 Composition studies of site-c
Page 168 and 169:
MoP26 Single InAs quantum dots morp
Page 170 and 171:
MoP27 Investigations of growth kine
Page 172 and 173:
Integrated PL intensity (arb. units
Page 174 and 175:
MoP30 Occurrences 160 140 120 100 8
Page 176 and 177:
MoP32 Ferromagnetic and transport p
Page 178 and 179:
Self-assembled InP-nanoneedles grow
Page 180 and 181:
MoP34 Selective growth of InP on pr
Page 182 and 183:
MoP36 MBE growth of quantum-cascade
Page 184 and 185:
MoP38 Emission of colloidal nano-cr
Page 189 and 190:
Tuesday Poster Session
Page 191 and 192:
TuP02 In-situ, real time Auger Moni
Page 193 and 194:
TuP03 Optimisation of Unusual Quant
Page 195 and 196:
TuP05 Nonpolar III-nitride microcav
Page 197 and 198:
TuP07 Comparison of InAs quantum do
Page 199 and 200:
TuP09 Correlating electronic and st
Page 201 and 202:
TuP10 Growth and microstructure of
Page 203 and 204:
TuP11 Figures Figure 1. First appro
Page 205 and 206:
TuP13 Optical Signatures of Dopant
Page 207 and 208:
TuP14 Optical properties of post-gr
Page 209 and 210:
TuP15 Intensity (a.u.) 10 17 10 15
Page 211 and 212:
TuP16 (a) (b) (c) (d) (e) (f) Fig 1
Page 213 and 214:
TuP17 Fig.1 (a) AFM micrograph of a
Page 215 and 216:
nitrogen flow [sccm] growth rate [n
Page 217 and 218:
TuP21 MBE growth approaches for imp
Page 219 and 220:
TuP22 Post-growth rapid thermal ann
Page 221 and 222:
TuP24 Use of RHEED to optimize atom
Page 223 and 224:
TuP26 Enhanced intermixing in Ge na
Page 225 and 226:
TuP27 Influence of nitrogen flux on
Page 227 and 228:
TuP28 Growth of metal Co/Ag superla
Page 229 and 230:
TuP30 Reversible Nanofacetting and
Page 231 and 232:
TuP31 Homoepitaxy and nitrogen dopi
Page 233 and 234:
TuP32 Structural characterization o
Page 235 and 236:
TuP33 An Auger Electron Analyzer Sy
Page 237 and 238:
TuP34 MBE droplet epitaxy of InGaAs
Page 239 and 240:
TuP36 Correlation of structural, ch
Page 241 and 242:
TuP37 Optical and structural proper
Page 243:
Laser-MBE UHV Cluster PLD Workstati
Page 246 and 247:
COUPPEY Catherine, RIBER (FRANCE) C
Page 248 and 249:
LYAMKINA Anna, Rzhanov Institute (R
Page 251 and 252:
Veeco MBE: The element that takes y
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Book of abstracts - Euro-MBE 2011 - CNRS

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