Book of abstracts - Euro-MBE 2011 - CNRS

POSTER SESSION 1
Monday, March 21 st 19:00 – 20:45
OPENING SESSION
MoP10
MoP11
MoP12
MoP13
MoP14
Near infrared high efficiency InAs/GaAsSb QDLEDs: band
alignment and carrier recombination mechanisms.
A. Hierro, M. Montes, M. Moral, J.M. Ulloa, A. Guzman.
In-situ Reflectance Anisotropy Spectroscopy (RAS) for
doping control during MBE growth of AlGaInAsSb laser
structures .
D. Hoffmann , T. Loeber and H. Fouckhardt.
Effect of growth temperature on surface morphology of
selectively grown GaN layers by ammonia-based metalorganic
molecular beam.
S. Naritsuka , C. H. Lin, R. Abe, S. Uchiyama, Y. Uete
and T. Maruyama .
Investigation of the local electronic structure of Cu-doped
GaN grown by plasma assisted MBE.
R. Schuber, P.R. Ganz , F. Wilhelm , A. Rogalev ,
and D.M. Schaadt.
Growth Optimization for InAs/GaSb T2SL Structures by
MBE.
Y. X. Song , S. M. Wang, C. Asplund, H. Malm, X. Lu, J. Shao.
MoP15
MoP16
A prototype of heterovalent interfaces: Reduction of the
potential barrier in the conduction band at the n-ZnSe /
n-GaAs in.
A. Frey, U. Bass, S. Mahapatra, C. Schumacher, J. Geurts
and K. Brunner.
Effect of growth temperature on quantum dot laser (Ga,In)
(N,As) self-assembled quantum dots.
O. A. Niasse, M. AL Khalfioui, B. Ba, A. Bèye, M. Leroux.
MoP17
MoP18
Effect of different monolayer coverage for the seed layer in
quaternary alloy capped multilayer InAs/GaAs quantum
dot system.
S. Chakrabarti ,A. Mandal and N. Halder .
Neutron reflectometry studies of hetero-interfacial H layer
in highly lattice-mismatched epitaxy on Si.
H. Asaoka, T. Yamazaki, D. Yamazaki, M. Takeda
and S. Shamoto.