FQA9N90C 900V N-Channel MOSFET

FQA9N90C 

900V N-Channel MOSFET 

Features 

• 9A, 900V, R DS(on) = 1.4Ω @V GS = 10 V 

• Low gate charge ( typical 45 nC) 

• Low Crss ( typical 14pF) 

• Fast switching 

• 100% avalanche tested 

• Improved dv/dt capability 

Description 

July 2007 

QFET ® 

These N-Channel enhancement mode power field effect 

transistors are produced using Fairchild’s proprietary, planar 

stripe, DMOS technology. 

This advanced technology has been especially tailored to 

minimize on-state resistance, provide superior switching 

performance, and withstand high energy pulse in the avalanche 

and commutation mode. These devices are well suited for high 

efficient switched mode power supplies, active power factor 

correction, electronic lamp ballast based on half bridge 

topology. 

FQA9N90C 900V N-Channel MOSFET 

D 

G 

Absolute Maximum Ratings 

G 

D S 

TO-3P 

FQA Series 

S 

Symbol Parameter FQA9N90C Units 

V DSS Drain-Source Voltage 900 V 

I D Drain Current - Continuous (T C = 25°C) 9.0 A 

Thermal Characteristics 

- Continuous (T C = 100°C) 5.7 A 

I DM Drain Current - Pulsed (Note 1) 36 A 

V GSS Gate-Source Voltage ± 30 V 

E AS Single Pulsed Avalanche Energy (Note 2) 900 mJ 

I AR Avalanche Current (Note 1) 9.0 A 

E AR Repetitive Avalanche Energy (Note 1) 28 mJ 

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns 

P D Power Dissipation (T C = 25°C) 280 W 

- Derate above 25°C 2.22 W/°C 

T J , T STG Operating and Storage Temperature Range -55 to +150 °C 

T L 

Maximum lead temperature for soldering purposes, 

1/8 from case for 5 seconds 

300 °C 

Symbol Parameter Typ Max Units 

R θJC Thermal Resistance, Junction-to-Case -- 0.45 °C/W 

R θCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W 

R θJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W 

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com 

FQA9N90C Rev. A

Package Marking and Ordering Information 

Device Marking Device Package Reel Size Tape Width Quantity 

FQA9N90C FQA9N90C TO-3P -- -- 30 

FQA9N90C FQA9N90C_F109 TO-3PN -- -- 30 

Electrical Characteristics T C = 25°C unless otherwise noted 

Symbol Parameter Test Conditions Min Typ Max Units 

Off Characteristics 

BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA 900 -- -- V 

∆BV DSS / 

∆T J 

Breakdown Voltage Temperature Coefficient I D = 250 µA, Referenced to 25°C -- 0.99 -- V/°C 

I DSS Zero Gate Voltage Drain Current V DS = 900 V, V GS = 0 V -- -- 10 µA 

V DS = 720 V, T C = 125°C -- -- 100 µA 

I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V -- -- 100 nA 

I GSSR Gate-Body Leakage Current, Reverse V GS = -30 V, V DS = 0 V -- -- -100 nA 

On Characteristics 

V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250 µA 3.0 -- 5.0 V 

R DS(on) Static Drain-Source On-Resistance V GS = 10 V, I D = 4.5 A -- 1.12 1.4 Ω 

g FS Forward Transconductance V DS = 50 V, I D = 4.5 A (Note 4) -- 9.2 -- S 

Dynamic Characteristics 

C iss Input Capacitance V DS = 25 V, V GS = 0 V, 

-- 2100 2730 pF 

C oss Output Capacitance 

f = 1.0 MHz 

-- 175 230 pF 

C rss Reverse Transfer Capacitance -- 14 18 pF 

Switching Characteristics 

t d(on) 

t r 

Turn-On Delay Time 

Turn-On Rise Time 

V DD = 450 V, I D = 11.0A, 

R G = 25 Ω 

-- 

-- 

50 

120 

110 

250 

ns 

ns 


t d(off) Turn-Off Delay Time -- 100 210 ns 

(Note 4, 5) 

t f Turn-Off Fall Time -- 75 160 ns 

Q g Total Gate Charge V DS = 720 V, I D = 11.0A, 

-- 45 58 nC 

Q gs Gate-Source Charge 

V GS = 10 V 

-- 13 -- nC 

Q gd Gate-Drain Charge 

(Note 4, 5) 

-- 18 -- nC 

Drain-Source Diode Characteristics and Maximum Ratings 

I S Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A 

I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A 

V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S =9.0 A -- -- 1.4 V 

t rr Reverse Recovery Time V GS = 0 V, I S = 9.0 A, 

-- 550 -- ns 

Q rr Reverse Recovery Charge 

dI F / dt = 100 A/µs (Note 4) 

-- 6.5 -- µC 

NOTES: 

1. Repetitive Rating : Pulse width limited by maximum junction temperature 

2. L = 21mH, I AS =9.0A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C 

3. I SD ≤ 9.0A, di/dt ≤200A/µs, V DD ≤ BV DSS, Starting T J = 25°C 

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 

5. Essentially independent of operating temperature 

FQA9N90C Rev. A 

2 www.fairchildsemi.com

Typical Performance Characteristics 

Figure 1. On-Region Characteristics 

I D 

, Drain Current [A] 

V GS 

Top : 15.0 V 

10.0 V 

8.0 V 

10 1 7.0 V 

6.5 V 

6.0 V 

Bottom : 5.5 V 

10 0 

10 -1 

10 -1 10 0 10 1 

V DS 

, Drain-Source Voltage [V] 

Notes : 

1. 250µ s Pulse Test 

2. T C = 25 

Figure 3. On-Resistance Variation vs. 

Drain Current and Gate Voltage 

Figure 2. Transfer Characteristics 

I D 


10 1 150 o C 

10 0 

25 o C -55 o C 

Notes : 

1. V DS = 50V 


10 -1 

2 4 6 8 10 

V GS 

, Gate-Source Voltage [V] 

Figure 4. Body Diode Forward Voltage 

Variation vs. Source Current 

and Temperatue 


3.0 

R DS(ON) 

[Ω ], 

Drain-Source On-Resistance 

2.5 

2.0 

1.5 

V GS 

= 20V 

V GS 

= 10V 

Note : T = 25 

J 

I DR 

, Reverse Drain Current [A] 

10 1 

10 0 

150 

25 

Notes : 

1. V GS = 0V 


1.0 

0 5 10 15 20 25 30 

I D 


10 -1 

0.2 0.4 0.6 0.8 1.0 1.2 1.4 

V SD 

, Source-Drain voltage [V] 

Figure 5. Capacitance Characteristics 

Figure 6. Gate Charge Characteristics 

3500 

3000 

12 

10 

V DS 

= 180V 

V DS 

= 450V 

Capacitance [pF] 

2500 

2000 

1500 

1000 

500 

C iss 

C oss 

C rss 

C iss = C gs + C gd (C ds = shorted) 

C oss = C ds + C gd 

C rss = C gd 

Notes : 

1. V GS = 0 V 

2. f = 1 MHz 

V GS 

, Gate-Source Voltage [V] 

8 

6 

4 

2 

V DS 

= 720V 

Note : I = 9A D 

0 

10 -1 10 0 10 1 

V DS 


0 

0 10 20 30 40 50 

Q G 

, Total Gate Charge [nC] 



Typical Performance Characteristics (Continued) 

Figure 7. Breakdown Voltage Variation 

vs. Temperature 

BV DSS 

, (Normalized) 

Drain-Source Breakdown Voltage 

1.2 

1.1 

1.0 

0.9 

Notes : 

1. V GS 

= 0 V 

2. I D 

= 250 µA 

Figure 8. On-Resistance Variation 

vs. Temperature 

R DS(ON) 

, (Normalized) 

Drain-Source On-Resistance 

3.0 

2.5 

2.0 

1.5 

1.0 

0.5 

Notes : 

1. V GS = 10 V 

2. I D = 4.5 A 


0.8 

-100 -50 0 50 100 150 200 

T J 

, Junction Temperature [ o C] 

Figure 9. Maximum Safe Operating Area 

0.0 

-100 -50 0 50 100 150 200 

T J 

, Junction Temperature [ o C] 

Figure 10. Maximum Drain Current 

vs. Case Temperature 

2 Operation in This Area 

10 is Limited by R DS(on) 

10 µs 

10 

I D 


10 1 

10 0 

1 ms 

10 ms 

DC 

100 µs 

I D 


8 

6 

4 

10 -1 

Notes : 

1. T C = 25 o C 

2. T J = 150 o C 

3. Single Pulse 

2 

10 -2 

10 0 10 1 10 2 10 3 

V DS 


0 

25 50 75 100 125 150 

T C 

, Case Temperature [ ] 

Figure 11. Transient Thermal Response Curve 

Z θ JC 

(t), Thermal Response 

10 -1 

10 -2 

D=0.5 

0.2 

0.1 

0.05 

0.02 

0.01 

10 0 Notes : 

single pulse 

 

1. Z θ JC (t) = 0.45 /W Max. 

2. Duty Factor, D=t 1 /t 2 

3. T JM - T C = P DM * Z θ JC (t) 

P DM 

t 1 

t 2 

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 

t 1 

, Square Wave Pulse Duration [sec] 

FQA9N90CRev. A 


Gate Charge Test Circuit & Waveform 

FQA9N90C F109 900V N-Channel MOSFET 

Resistive Switching Test Circuit & Waveforms 

Unclamped Inductive Switching Test Circuit & Waveforms 



Peak Diode Recovery dv/dt Test Circuit & Waveforms 




Mechanical Dimensions 

15.60 ±0.20 

13.60 ±0.20 

ø3.20 ±0.10 

9.60 ±0.20 

13.90 ±0.20 

TO-3P 

12.76 ±0.20 

3.80 ±0.20 

19.90 ±0.20 

23.40 ±0.20 

18.70 ±0.20 

4.80 ±0.20 

1.50 +0.15 

–0.05 


2.00 ±0.20 

3.00 ±0.20 

1.00 ±0.20 

3.50 ±0.20 

16.50 ±0.30 

1.40 ±0.20 

5.45TYP 

[5.45 ±0.30] 

5.45TYP 

[5.45 ±0.30] 

0.60 +0.15 

–0.05 

Dimensions in Millimeters 



Mechanical Dimensions (Continued) 

TO-3PN 


Dimensions in Millimeters 



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SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

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used in accordance with instructions for use provided in the 

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PRODUCT STATUS DEFINITIONS 

Definition of Terms 

Datasheet Identification Product Status Definition 

Advance Information Formative or In Design This datasheet contains the design specifications for product 

development. Specifications may change in any manner without notice. 

Preliminary First Production This datasheet contains preliminary data; supplementary data will be 

published at a later date. Fairchild Semiconductor reserves the right to 

make changes at any time without notice to improve design. 

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor 

reserves the right to make changes at any time without notice to 

improve design. 

Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued 

by Fairchild Semiconductor.The datasheet is printed for reference 

information only. 

Rev. I29 

FQA9N90C A

FQA9N90C 900V N-Channel MOSFET

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