QEC122-IR Emitting Diode - Cornell
QEC122-IR Emitting Diode - Cornell
QEC122-IR Emitting Diode - Cornell
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PLASTIC INFRARED<br />
LIGHT EMITTING DIODE<br />
QEC121 <strong>QEC122</strong> QEC123<br />
PACKAGE DIMENSIONS<br />
0.116 (2.95)<br />
REFERENCE<br />
SURFACE<br />
0.052 (1.32)<br />
0.032 (0.082)<br />
0.193 (4.90)<br />
0.030 (0.76)<br />
NOM<br />
0.800 (20.3)<br />
MIN<br />
0.050 (1.27)<br />
CATHODE<br />
0.100 (2.54)<br />
NOM<br />
0.018 (0.46)<br />
SQ. (2X)<br />
0.155 (3.94)<br />
SCHEMATIC<br />
NOTES:<br />
1. Dimensions are in inches (millimeters)<br />
2. Tolerance of ± .010 (.25) on all non nominal dimensions<br />
unless otherwise specified.<br />
ANODE<br />
CATHODE<br />
DESCRIPTION<br />
The QEC12X is an 880 nm AlGaAs LED encapsulated in a clear purple tinted, plastic T-1 package.<br />
FEATURES<br />
• = 880 nm<br />
• Chip material = AlGaAs<br />
• Package type: T-1 (3mm lens diameter)<br />
• Matched Photosensor: QSC112/113/114<br />
• Narrow Emission Angle, 16°<br />
• High Output Power<br />
• Package material and color: Clear, purple tinted, plastic<br />
© 2001 Fairchild Semiconductor Corporation<br />
DS300335 5/18/01 1 OF 4 www.fairchildsemi.com
PLASTIC INFRARED<br />
LIGHT EMITTING DIODE<br />
QEC121 <strong>QEC122</strong> QEC123<br />
ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise specified)<br />
Parameter Symbol Rating Unit<br />
Operating Temperature T OPR -40 to +100 °C<br />
Storage Temperature T STG -40 to +100 °C<br />
Soldering Temperature (Iron) (2,3,4) T SOL-I 240 for 5 sec °C<br />
Soldering Temperature (Flow) (2,3) T SOL-F 260 for 10 sec °C<br />
Continuous Forward Current I F 50 mA<br />
Reverse Voltage V R 5 V<br />
Power Dissipation (1) P D 100 mW<br />
NOTES<br />
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.<br />
2. RMA flux is recommended.<br />
3. Methanol or isopropyl alcohols are recommended as cleaning agents.<br />
4. Soldering iron 1/16” (1.6mm) minimum from housing.<br />
ELECTRICAL / OPTICAL CHARACTERISTICS (T A = 25°C)<br />
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS<br />
Peak Emission Wavelength I F = 100 mA PE — 880 — nm<br />
Emission Angle I F = 100 mA 21/ 2 — 16 — Deg.<br />
Forward Voltage I F = 100 mA, tp = 20 ms V F — — 1.7 V<br />
Reverse Current V R = 5 V I R — — 10 µA<br />
Radiant IntensityQEC121 I F = 100 mA, tp = 20 ms I E 14 — — mW/sr<br />
Radiant Intensity<strong>QEC122</strong> I F = 100 mA, tp = 20 ms I E 27 — 94 mW/sr<br />
Radiant IntensityQEC123 I F = 100 mA, tp = 20 ms I E 39 — — mW/sr<br />
Rise Time<br />
t r — 800 — ns<br />
I F = 100 mA<br />
Fall Time t f — 800 — ns<br />
www.fairchildsemi.com 2 OF 4 5/18/01 DS300335
NORMALIZED RADIANT INTENSITY<br />
PLASTIC INFRARED<br />
LIGHT EMITTING DIODE<br />
QEC121 <strong>QEC122</strong> QEC123<br />
Fig.1 Normalized Radiant Intensity vs. Forward Current<br />
Fig.2 Coupling Characteristics of QEC12X And QSC11X<br />
Ie - NORMALIZED RADIANT INTENSITY<br />
10<br />
1<br />
0.1<br />
0.01<br />
Normalized to:<br />
I F = 100 mA Pulsed<br />
t pw = 100 µs<br />
Duty Cycle = 0.1 %<br />
T A = 25˚C<br />
0.001<br />
1 10 100 1000<br />
I F - FORWARD CURRENT (mA)<br />
IC (ON) - NORMALIZED COLLECTOR CURRENT (mA)<br />
1.0<br />
0.8<br />
0.6<br />
0.4<br />
0.2<br />
I F = 20 mA<br />
I F = 100 mA<br />
0.0<br />
0 1 2 3 4 5 6 7 8<br />
LENS TIP SEPARATION (INCHES)<br />
Normalized to:<br />
d = 0<br />
I F Pulsed<br />
t pw = 100 µs<br />
Duty Cycle = 0.1 %<br />
V CC = 5 V<br />
R L = 100 Ω<br />
T A = 25˚C<br />
Fig.3 Forward Voltage vs. Ambient Temperature<br />
Fig. 4 Normalized Radiant Intensity vs. Wavelength<br />
2.0<br />
I F = 50 mA<br />
1.0<br />
0.9<br />
VF - FORWARD VOLTAGE (V)<br />
1.5<br />
1.0<br />
0.5<br />
Normalized to:<br />
I F Pulsed<br />
t pw = 100 µs<br />
Duty Cycle = 0.1 %<br />
I F = 20 mA<br />
0.0<br />
-40 -20 0 20 40 60 80 100<br />
T A - AMBIENT TEMPERATURE (˚C)<br />
I F = 100 mA<br />
I F = 10 mA<br />
0.8<br />
0.7<br />
0.6<br />
0.5<br />
0.4<br />
0.3<br />
0.2<br />
0.1<br />
775 800 825 850 875 900 925 950<br />
(nm)<br />
Fig. 5 Radiation Diagram<br />
120<br />
110<br />
100<br />
90<br />
80<br />
70<br />
60<br />
130<br />
50<br />
140<br />
40<br />
150<br />
30<br />
160<br />
20<br />
170<br />
10<br />
180<br />
1.0<br />
0.8<br />
0.6<br />
0.4<br />
0.2<br />
0<br />
0.0 0.2 0.4 0.6 0.8 1.0<br />
DS300335 5/18/01 3 OF 4 www.fairchildsemi.com
PLASTIC INFRARED<br />
LIGHT EMITTING DIODE<br />
QEC121 <strong>QEC122</strong> QEC123<br />
DISCLAIMER<br />
FA<strong>IR</strong>CHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO<br />
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FA<strong>IR</strong>CHILD DOES NOT ASSUME<br />
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR C<strong>IR</strong>CUIT DESCRIBED<br />
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF<br />
OTHERS.<br />
LIFE SUPPORT POLICY<br />
FA<strong>IR</strong>CHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT<br />
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FA<strong>IR</strong>CHILD<br />
SEMICONDUCTOR CORPORATION. As used herein:<br />
1. Life support devices or systems are devices or<br />
systems which, (a) are intended for surgical<br />
implant into the body,or (b) support or sustain life,<br />
and (c) whose failure to perform when properly<br />
used in accordance with instructions for use provided<br />
in labeling, can be reasonably expected to result in a<br />
significant injury of the user.<br />
2. A critical component in any component of a life support<br />
device or system whose failure to perform can be<br />
reasonably expected to cause the failure of the life<br />
support device or system, or to affect its safety or<br />
effectiveness.<br />
www.fairchildsemi.com 4 OF 4 5/18/01 DS300335