FDD7N20/FDU7N20 N-Channel MOSFET

FDD7N20 / FDU7N20 

N-Channel MOSFET 

200V, 5A, 0.69Ω 

Features 

• R DS(on) = 0.58Ω ( Typ. ) @ V GS = 10V, I D = 2.5A 

• Low gate charge( Typ. 5nC ) 

• Low Crss ( Typ. 5pF ) 

• Fast switching 

• 100% avalanche tested 

• Improved dv/dt capability 

• RoHS compliant 

G 

S 

D 

D-PAK 

FDD Series 

G D S 

Description 

April 2007 

UniFET TM 

tm 

These N-Channel enhancement mode power field effect 

transistors are produced using Fairchild’s proprietary, planar 

stripe, DMOS technology. 

This advanced technology has been especically tailored to 

minimize on-state resistance, provide superior switching 

performance, and withstand high energy pulse in the avalanche 

and commutation mode. These devices are well suited for high 

efficient switched mode power supplies and active power factor 

correction. 

I-PAK 

FDU Series 

G 

D 

S 

FDD7N20 / FDU7N20 200V N-Channel MOSFET 

MOSFET Maximum Ratings T C = 25 o C unless otherwise noted 

Symbol Parameter Ratings Units 

V DSS Drain to Source Voltage 200 V 

V GSS Gate to Source Voltage ±30 V 

I D 

Drain Current 

-Continuous (T C = 25 o C) 5 

-Continuous (T C = 100 o C) 3 

A 

I DM Drain Current - Pulsed (Note 1) 15 A 

E AS Single Pulsed Avalanche Energy (Note 2) 62.5 mJ 

I AR Avalanche Current (Note 1) 5 A 

E AR Repetitive Avalanche Energy (Note 1) 4.3 mJ 

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 

P D 

Power Dissipation 

(T C = 25 o C) 43 W 

- Derate above 25 o C 0.34 W/ o C 

T J , T STG Operating and Storage Temperature Range -55 to +150 o C 

T L 

Maximum Lead Temperature for Soldering Purpose, 

1/8” from Case for 5 Seconds 

300 o C 

Thermal Characteristics 

Symbol Parameter Ratings Units 

R θJC Thermal Resistance, Junction to Case 2.9 

o C/W 

R θJA Thermal Resistance, Junction to Ambient 110 

©2007 Fairchild Semiconductor Corporation 

FDD7N20 / FDU7N20 Rev. A 

1 

www.fairchildsemi.com

Package Marking and Ordering Information T C = 25 o C unless otherwise noted 

Device Marking Device Package Reel Size Tape Width Quantity 

FDD7N20 FDD7N20TM D-PAK 380mm 16mm 2500 

FDD7N20 FDD7N20TF D-PAK 380mm 16mm 2000 

FDU7N20 FDU7N20 I-PAK - - 70 

Electrical Characteristics 

Symbol Parameter Test Conditions Min. Typ. Max. Units 

Off Characteristics 

BV DSS Drain to Source Breakdown Voltage I D = 250μA, V GS = 0V, T J = 25 o C 200 - - V 

ΔBV DSS Breakdown Voltage Temperature 

I 

/ ΔT J Coefficient 

D = 250μA, Referenced to 25 o C - 0.2 - V/ o C 

V 

I DSS 

Zero Gate Voltage Drain Current 

DS = 200V, V GS =0V - - 1 μA 

V DS = 160V, T C = 125 o C - - 10 μA 

I GSS Gate to Body Leakage Current V GS = ±30V, V DS = 0V - - ±100 nA 

On Characteristics 

V GS(th) Gate Threshold Voltage V GS = V DS , I D = 250μA 3.0 - 5.0 V 

R DS(on) Static Drain to Source On Resistance V GS = 10V, I D = 2.5A - 0.58 0.69 Ω 

g FS Forward Transconductance V DS = 40V, I D = 2.5A (Note 4) - 6.2 - S 

Dynamic Characteristics 

C iss 

Input Capacitance 

- 185 250 pF 

V DS = 25V, V GS = 0V 

C oss Output Capacitance - 45 65 pF 

f = 1MHz 

C rss Reverse Transfer Capacitance - 5 10 pF 

Q g 

Total Gate Charge at 10V 

- 5 6.7 nC 

Q gs Gate to Source Gate Charge V DS = 160V, I D = 7A 

- 1.7 - nC 

V GS = 10V 

Q gd Gate to Drain “Miller” Charge (Note 4, 5) - 2.4 - nC 


Switching Characteristics 

t d(on) Turn-On Delay Time 

- 9 28 ns 

t r Turn-On Rise Time V DD = 100V, I D = 7A 

- 30 70 ns 

t d(off) Turn-Off Delay Time 

R G = 25Ω 

- 13 36 ns 

t f Turn-Off Fall Time (Note 4, 5) - 10 30 ns 

Drain-Source Diode Characteristics 

I S Maximum Continuous Drain to Source Diode Forward Current - - 5 A 

I SM Maximum Pulsed Drain to Source Diode Forward Current - - 20 A 

V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 5A - - 1.4 V 

t rr Reverse Recovery Time V GS = 0V, I SD = 7A 

- 120 - ns 

Q rr Reverse Recovery Charge dI F /dt = 100A/μs (Note 4) - 0.4 - μC 

Notes: 

1. Repetitive Rating: Pulse width limited by maximum junction temperature 

2. L =5mH, I AS = 5A, V DD = 50V, R G = 25Ω, Starting T J = 25°C 

3. I SD ≤ 5A, di/dt ≤ 200A/μs, V DD ≤ BV DSS , Starting T J = 25°C 

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 

5. Essentially Independent of Operating Temperature Typical Characteristics 


2 


Typical Performance Characteristics 

ID,Drain Current[A] 

Figure 1. On-Region Characteristics 

20 

10 

1 

0.1 

V GS = 10.0 V 

8.0 V 

7.0 V 

6.5 V 

6.0 V 

5.5 V 

Figure 2. Transfer Characteristics 

* Notes : 

* Notes : 

1. 250μs Pulse Test 

2. T C = 25 o 1. V DS = 25V 

C 


0.01 

1 

0.04 0.1 1 10 25 

4 6 8 10 12 

V DS ,Drain-Source Voltage[V] 

V GS ,Gate-Source Voltage[V] 

Figure 3. On-Resistance Variation vs. 

Figure 4. Body Diode Forward Voltage 

Drain Current and Gate Voltage Variation vs. Source Current 

and Temperature 

1.5 

ID,Drain Current[A] 

20 

10 

200 

100 

25 o C 

150 o C 

-55 o C 


RDS(ON) [Ω], 

Drain-Source On-Resistance 

1.2 

0.9 

0.6 

V GS = 10V 

V GS = 20V 

* Note : T J = 25 o C 

0.3 

0 2 4 6 8 10 

I D , Drain Current [A] 

IS, Reverse Drain Current [A] 

10 

1 

150 o C 

25 o C 

Notes: 

1. V GS 

= 0V 


0.2 

0.0 0.7 1.4 2.1 2.8 3.5 

V SD 

, Body Diode Forward Voltage [V] 

Capacitances [pF] 

Figure 5. Capacitance Characteristics 

500 

400 

300 

200 

100 

C oss 

C iss 

C rss 

Ciss = Cgs + Cgd (Cds = shorted) 

Coss = Cds + Cgd 

Crss = Cgd 

* Note: 

1. V GS = 0V 

2. f = 1MHz 

Figure 6. Gate Charge Characteristics 

VGS, Gate-Source Voltage [V] 

10 

8 

V DS = 160V 

6 

V DS = 100V 

V DS = 50V 

4 

2 

0 

0.1 1 10 

V DS , Drain-Source Voltage [V] 

* Note : I D = 7A 

0 

30 0 1 2 3 4 5 6 

Q g , Total Gate Charge [nC] 


3 


Typical Performance Characteristics (Continued) 

BVDSS, [Normalized] 

Drain-Source Breakdown Voltage 

ID, Drain Current [A] 

Figure 7. Breakdown Voltage Variation 

vs. Temperature 

1.2 

1.1 

1.0 

0.9 

* Notes : 

1. V GS = 0V 

2. I D = 250μA 

0.8 

-100 -50 0 50 100 150 200 

T J , Junction Temperature [ o C] 

Figure 9. Maximum Safe Operating Area 

50 

10 

1 

0.1 

Operation in This Area 

is Limited by R DS(on) 

* Notes : 

1. T C = 25 o C 

2. T J = 150 o C 

3. Single Pulse 

0.01 

1 10 100 

V DS , Drain-Source Voltage [V] 

20μs 

100μs 

1ms 

10ms 

DC 

500 

RDS(on), [Normalized] 

Drain-Source On-Resistance 

Figure 8. On-Resistance Variation 

vs. Temperature 

3.0 

2.5 

2.0 

1.5 

1.0 

0.5 

* Notes : 

1. V GS = 10V 

2. I D = 2.5A 

0.0 

-100 -50 0 50 100 150 200 

T J , Junction Temperature [ o C] 

Figure 10. Maximum Drain Current 

vs. Case Temperature 

ID, Drain Current [A] 

6 

5 

4 

3 

2 

1 

0 

25 50 75 100 125 150 

T C , Case Temperature [ o C] 


Figure 11. Transient Thermal Response Curve 

5 

Thermal Response [Z θJC ] 

1 

0.1 

0.5 

0.2 

0.1 

0.05 

0.02 

0.01 

P DM 

t 1 

t 2 

* Notes : 

1. Z θJC (t) = 2.9 o C/W Max. 

Single pulse 

2. Duty Factor, D=t 1 /t 2 

3. T JM - T C = P DM * Z θJC (t) 

0.01 

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 

Rectangular Pulse Duration [sec] 


4 


Gate Charge Test Circuit & Waveform 

Resistive Switching Test Circuit & Waveforms 


Unclamped Inductive Switching Test Circuit & Waveforms 


5 


Peak Diode Recovery dv/dt Test Circuit & Waveforms 

D U T 

+ 

I S D 

V D 

S 

_ 

L 

D 

r iv e r 

R G S a m e T y p e 

a s D U 

T 

V G S • d v / d t c o n t r o lle d b y R G 

• I S D c o n t r o lle d b y p u ls e p e r io d 

V D 

D 


V G 

S 

( D riv e r ) 

G a t e P u ls e W id t h 

D = 

-------------------------- 

G 

a t e P u ls e P e r io d 

1 0 V 

I F M , B o d y D io d e F o r w a r d C u r r e n t 

I S D 

( D U T ) 

d i/ d t 

I R 

M 

B o d y D io d e R e v e r s e C u r r e n t 

V D 

S 

( D U T ) 

B o d y D io d e R e c o v e r y d v / d t 

V S D 

V D 

D 

B o d y D 

io d e 

F o r w a r d V o lt a g e D r o p 


6 


Mechanical Dimensions 

D-PAK 



7 


Mechanical Dimensions 

I-PAK 



8 


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PRODUCT STATUS DEFINITIONS 

Definition of Terms 

Datasheet Identification Product Status Definition 

Advance Information Formative or In Design This datasheet contains the design specifications for product 

development. Specifications may change in any manner without notice. 

Preliminary First Production This datasheet contains preliminary data; supplementary data will be 

published at a later date. Fairchild Semiconductor reserves the right to 

make changes at any time without notice to improve design. 

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor 

reserves the right to make changes at any time without notice to improve 

design. 

Obsolete Not In Production This datasheet contains specifications on a product that has been 

discontinued by Fairchild Semiconductor. The datasheet is printed for 

reference information only. 

Rev. I28 

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

FDD7N20/FDU7N20 N-Channel MOSFET

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