njit-etd2000-029 - New Jersey Institute of Technology

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ACKNOWLEDGMENT The author wishes to express his sincere gratitude to his supervisor, Professor Roland Levy, for his guidance, friendship, and moral support throughout this research. The following ancient hindu saying correctly represents his contribution; A hundred suns may blaze, A thousand moons may shine, In this intense brilliance, Without my teacher, There is pitch darkness. Special thanks are due towards Prof. J. Grow, Prof. N. M. Ravindra, Dr. D. Ivanov, and Dr. M. Green for serving as committee members and taking time to review my work. I appreciate their efforts in helping me to refine my thesis. Thanks are also due towards Mr. Vitaly Sigal, for taking time to fix the problems that I had with the CVD reactor and to Dr. Roumiana Petrova and Dr. E. Ramos for their encouragement and help from time to time. Last but not the least, I would like to thank my friends who have supported me all the way. Without their encouragement and competitive spirit I would not have been able to complete my degree in this time frame. Some of them such as Krit Aryusook, Kiran Kumar, Dianhong Luo, Sameer Dharmadhikari, Lim Heechuan, Yew Fong, M. Tungare, M. Sonnenberg, R. Dhavalikar deserve special mention for their good wishes, time, many interesting conversations, and good friendship. vi
TABLE OF CONTENTS Chapter Page 1 INTRODUCTION 1 1.1 Thin Film Deposition Methods 13 1.1.1 Physical Vapor Deposition... 13 1.1.2 Chemical Vapor Deposition 16 1.1.2.1 Overview of Chemical Vapor Deposition Process 17 1.1.2.2 CVD Reactor Systems 18 1.1.2.3 Nucleation and Growth 20 1.1.2.4 Chemical Reactions and Kinetics 20 1.1.2.5 Reaction Mechanism in CVD 21 1.1.2.6 Transport Phenomena 23 1.1.2.7 Factors Affecting Film Uniformity 25 1.2 Types of CVD Process 26 1.2.1 Plasma Enhanced CVD (PECVD) 26 1.2.2 Photo Induced CVD 27 1.2.3 Thermally Activated CVD 27 1.3 Low Pressure Chemical Vapor Deposition (LPCVD) Process 28 1.3.1 Advantages of CVD 29 1.3.2 Limitations of CVD 30 1.4 Dielectric Materials 31 1.4.1 Requirements of Dielectric Materials for VLSI Technology 31 1.4.2 Requirements for Low Dielectric Constant ILD Materials 33 1.4.3 Applications of Dielectric Materials in VLSI Technology 34 1.4.4 BN as a Dielectric Materials 34 vii
Page 1 and 2: Copyright Warning & Restrictions Th
Page 3 and 4: ABSTRACT SYNTHESIS AND CHARACTERIZA
Page 5 and 6: SYNTHESIS AND CHARACTERIZATION OF L
Page 7 and 8: APPROVAL PAGE SYNTHESIS AND CHARACT
Page 9: This thesis is dedicated to my pare
Page 13 and 14: TABLE OF CONTENTS (Continued) 2.6 A
Page 15 and 16: TABLE OF CONTENTS (Continued) Chapt
Page 17 and 18: LIST OF TABLES Table Page 1.1 Evapo
Page 19 and 20: LIST OF FIGURES (Continued) 4.2 Fil
Page 21 and 22: LIST OF FIGURES (Continued) 4.43 SE
Page 23 and 24: 2 of transistors on a chip would co
Page 25 and 26: 4 Typically, light beams do the etc
Page 27 and 28: Having the technology to transfer t
Page 29 and 30: 8 capacitance of the wire. It may s
Page 31 and 32: 10 side of the chip to the other. O
Page 33 and 34: metal/oxide/semiconductor integrate
Page 35 and 36: 14 properties of the film obtained
Page 37 and 38: 16 Chemical vapor deposition is dis
Page 39 and 40: 18 Figure 1.1 Scheme to show the tr
Page 41 and 42: 20 the low-pressure operation. Dry
Page 43 and 44: 22 • Reaction: The surface cataly
Page 45 and 46: 24 If the deposition process is lim
Page 47 and 48: 26 1.2 Types of CVD Process As ment
Page 49 and 50: 28 Lowering the gas pressure by abo
Page 51 and 52: 30 purity and density, controllable
Page 53 and 54: 32 to block alkali ions. All films
Page 55 and 56: 34 Some of the attractive propertie
Page 57 and 58: 36 1.5 Refractory Materials Ceramic
Page 59 and 60: 38 deposited and then a conducting
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40 Table 1.7 Physical properties of
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42 In Chapter 2, a review of litera
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Material Melting Temperature (°C)
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46 The reaction involving BCl 3 for
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48 B2H6 + 2NH3 = 2BN + 6H2 Rand et
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50 ammonia at 250° - 600°C in an
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52 2.3.1 Synthesis by CVD and LPCVD
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54 temperature range of 700-1300 K
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56 The refractive index of c-BN was
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58 the problem to hydrogen content
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60 Many researchers 70,69,82 have s
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62 BN film coatings are useful to i
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64 2.5.1 Dielectric Thin Films With
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66 A family of thermally stable, lo
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68 suggested that the there is a ch
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70 a heavily dependent on process c
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72 Typically thin beryllium or poly
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Figure 2.2 Trends in ULSI miniaturi
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76 Figure 2.3 Basic SCALPEL princip
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78 50 nanometers and smaller. The r
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80 A large number of materials have
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82 2.7 Aim and Scope of the Present
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84 jacket maintained the temperatur
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86 Figure 3.2 Schematic diagram of
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88 contamination and hence requires
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90 known reaction chamber volume. T
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92 all the experiments. The boat wa
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94 limited by sample surface and a
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96 3.5.6 Film Stress Stress develop
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98 3.5.7 X-Ray Diffraction (XRD) A
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100 where hγ , Eg(opt) and K 1 den
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102 technique. However the films we
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104 same film surface. Such measure
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106 the device, an electrical conta
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108 Figure 3.5 Process flow diagram
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110 samples. The recombination-gene
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112 3.7.2 Characterization of B-N-C
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114 In all the experiments, films d
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116 operating in the mass transfer
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118 variation in the NH3/TEAB flow
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120 mode, and a small peak close to
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122 infrared absorption spectra, no
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124 increasing the NH3/TEAB flow ra
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126 tensile behavior with increase
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128 material with the electrons jum
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130 while at a constant temperature
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132 4.4.6 Electrical Characterizati
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134 4.4.6.2 Investigation of LPCVD
Page 157 and 158:
136 Figure 4.17 C-V curve shift alo
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138 Figure 4.18 Capacitance-Voltage
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140 Thus by knowing the refractive
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142 rate of 40 sccm, as the Power w
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144 4.4.7.2 Characterization of B-N
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146 the reactant species in eq. 4.2
Page 169 and 170:
148 Figure 4.25 Variation of Film C
Page 171 and 172:
150 Figure 4.27 Plot of growth rate
Page 173 and 174:
152 4.5.3 Rate Equation Knowing the
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154 4.5.4 Reaction Mechanism In the
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156 high TiC14 coverage. ΘTiC13 ca
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158 Figure 4.30 shows a typical XPS
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160 degraded. Hence, films with thi
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162 Figure 4.35 Variation in film d
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164 Figure 4.37 Variation in film r
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166 emittance increased; the transm
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Figure 4.41 SEM micrograph of TiN d
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Figure 4.4 3 SEM micrograph of TiN
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172 Orientation (hid) Table 4.1 Com
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174 carried out under the same proc
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176 was not in a compound form. It
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REFERENCES 1. R. Turton. 1995. The
Page 201 and 202:
180 36. W. Kern and V. S. Ban, "Che
Page 203:
182 74. L. Imhoff, A. Bouteville, a
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