njit-etd2000-029 - New Jersey Institute of Technology

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LIST OF FIGURES Figure Page 1.1 Scheme to show the transport and reaction processes underlying CVD 18 1.2 Deposition rate as a function of substrate temperature exemplifying diffusion controlled and surface-reaction controlled regimes 2.1 Trends in ULSI miniaturization, exposure wavelength and limits of resolution enhancement techniques (RET) as a function of time 2.2 Trends in ULSI miniaturization, exposure wavelength and limits of resolution enhancement techniques (RET) as a function of time 2.3 Basic SCALPEL principle of operation showing contrast generation by differentiating more or less-scattered electrons 24 73 74 76 2.4 Schematic cross-section of a SCALPEL mask showing patterned membrane area and supporting grillage 76 3.1 Schematic representation of the LPCVD reactor 84 3.2 Schematic diagram of the modified experimental setup 86 3.3 Schematic representation showing the experimental setup to measure the radius of curvature of the bending of silicon substrate due to film stress.... 96 3.4 Schematic representation of a four point probe 105 3.5 Process flow diagram for the fabrication of the MOS device 108 3.6 Process flow diagram for the fabrication of the MIM device (Si Type-2) 108 3.7 Process flow diagram for the fabrication of the MIM device with metal film 109 3.8 Process flow diagram for the fabrication of the free standing B-N-C-H membranes 110 3.9 Cross sectional view of the X-ray window 111 4.1 Variation of average growth rate as a function of temperature 115 xiv
LIST OF FIGURES (Continued) 4.2 Film composition as a function of deposition temperature 116 4.3 Carbon concentration in the films as a function of deposition temperature 117 4.4 Variation of growth rate with the flow ratio of the reactants 118 4.5 Variation of Film composition as a function of NH3/TEAB flow ratio 119 4.6(a) Typical FTIR spectrum of BN films at 400°C 120 4.6(b) Typical FTIR spectrum of BN films at 550°C 121 4.7 Variation in the spectra with the flow ratio at 550 C 121 4.8 Variation of film density with increasing flow ratio of NH3/TEAB 123 4.9 Variation of refractive index with increasing flow ratio of NH3/TEAB 124 4.10 Variation of film stress with increasing flow ratio of NH 3/TEAB 126 4.11 Optical transmission of BN thin films 127 4.12 Optical absorption coefficient a as a function of the incident photon wavelength for varying NH3/TEAB flow ratios 128 4.13 Determination of the optical band gap from the plot of (αhv) 1/2 vs hv 129 4.14 X-ray diffraction pattern for a boron nitride film on silicon deposited at a temperature of 575 °C, pressure of 0.05 Torr, TEAB flow rate of 1 sccm, and NH3 flow rate of 50 sccm 131 4.15 Typical MIS capacitance-voltage curves for LPCVD boron nitride 133 4.16 Capacitance-frequency plot for BN MIS structures 135 4.17 C-V curve shift along the voltage axis due to (+) or (-) fixed oxide charge...... 136 4.18 Capacitance-Voltage measurements on MIM structures 138 4.19 Variation of dielectric constant with flow ratio of NH3/TEAB 139 4.20 I- V characteristics of BN films on (a) type-1 Si and (b) type-2 Si 140 xv
Page 1 and 2: Copyright Warning & Restrictions Th
Page 3 and 4: ABSTRACT SYNTHESIS AND CHARACTERIZA
Page 5 and 6: SYNTHESIS AND CHARACTERIZATION OF L
Page 7 and 8: APPROVAL PAGE SYNTHESIS AND CHARACT
Page 9 and 10: This thesis is dedicated to my pare
Page 11 and 12: TABLE OF CONTENTS Chapter Page 1 IN
Page 13 and 14: TABLE OF CONTENTS (Continued) 2.6 A
Page 15 and 16: TABLE OF CONTENTS (Continued) Chapt
Page 17: LIST OF TABLES Table Page 1.1 Evapo
Page 21 and 22: LIST OF FIGURES (Continued) 4.43 SE
Page 23 and 24: 2 of transistors on a chip would co
Page 25 and 26: 4 Typically, light beams do the etc
Page 27 and 28: Having the technology to transfer t
Page 29 and 30: 8 capacitance of the wire. It may s
Page 31 and 32: 10 side of the chip to the other. O
Page 33 and 34: metal/oxide/semiconductor integrate
Page 35 and 36: 14 properties of the film obtained
Page 37 and 38: 16 Chemical vapor deposition is dis
Page 39 and 40: 18 Figure 1.1 Scheme to show the tr
Page 41 and 42: 20 the low-pressure operation. Dry
Page 43 and 44: 22 • Reaction: The surface cataly
Page 45 and 46: 24 If the deposition process is lim
Page 47 and 48: 26 1.2 Types of CVD Process As ment
Page 49 and 50: 28 Lowering the gas pressure by abo
Page 51 and 52: 30 purity and density, controllable
Page 53 and 54: 32 to block alkali ions. All films
Page 55 and 56: 34 Some of the attractive propertie
Page 57 and 58: 36 1.5 Refractory Materials Ceramic
Page 59 and 60: 38 deposited and then a conducting
Page 61 and 62: 40 Table 1.7 Physical properties of
Page 63 and 64: 42 In Chapter 2, a review of litera
Page 65 and 66: Material Melting Temperature (°C)
Page 67 and 68: 46 The reaction involving BCl 3 for
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48 B2H6 + 2NH3 = 2BN + 6H2 Rand et
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50 ammonia at 250° - 600°C in an
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52 2.3.1 Synthesis by CVD and LPCVD
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54 temperature range of 700-1300 K
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56 The refractive index of c-BN was
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58 the problem to hydrogen content
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60 Many researchers 70,69,82 have s
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62 BN film coatings are useful to i
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64 2.5.1 Dielectric Thin Films With
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66 A family of thermally stable, lo
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68 suggested that the there is a ch
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70 a heavily dependent on process c
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72 Typically thin beryllium or poly
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Figure 2.2 Trends in ULSI miniaturi
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76 Figure 2.3 Basic SCALPEL princip
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78 50 nanometers and smaller. The r
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80 A large number of materials have
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82 2.7 Aim and Scope of the Present
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84 jacket maintained the temperatur
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86 Figure 3.2 Schematic diagram of
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88 contamination and hence requires
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90 known reaction chamber volume. T
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92 all the experiments. The boat wa
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94 limited by sample surface and a
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96 3.5.6 Film Stress Stress develop
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98 3.5.7 X-Ray Diffraction (XRD) A
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100 where hγ , Eg(opt) and K 1 den
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102 technique. However the films we
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104 same film surface. Such measure
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106 the device, an electrical conta
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108 Figure 3.5 Process flow diagram
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110 samples. The recombination-gene
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112 3.7.2 Characterization of B-N-C
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114 In all the experiments, films d
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116 operating in the mass transfer
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118 variation in the NH3/TEAB flow
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120 mode, and a small peak close to
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122 infrared absorption spectra, no
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124 increasing the NH3/TEAB flow ra
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126 tensile behavior with increase
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128 material with the electrons jum
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130 while at a constant temperature
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132 4.4.6 Electrical Characterizati
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134 4.4.6.2 Investigation of LPCVD
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136 Figure 4.17 C-V curve shift alo
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138 Figure 4.18 Capacitance-Voltage
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140 Thus by knowing the refractive
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142 rate of 40 sccm, as the Power w
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144 4.4.7.2 Characterization of B-N
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146 the reactant species in eq. 4.2
Page 169 and 170:
148 Figure 4.25 Variation of Film C
Page 171 and 172:
150 Figure 4.27 Plot of growth rate
Page 173 and 174:
152 4.5.3 Rate Equation Knowing the
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154 4.5.4 Reaction Mechanism In the
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156 high TiC14 coverage. ΘTiC13 ca
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158 Figure 4.30 shows a typical XPS
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160 degraded. Hence, films with thi
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162 Figure 4.35 Variation in film d
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164 Figure 4.37 Variation in film r
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166 emittance increased; the transm
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Figure 4.41 SEM micrograph of TiN d
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Figure 4.4 3 SEM micrograph of TiN
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172 Orientation (hid) Table 4.1 Com
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174 carried out under the same proc
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176 was not in a compound form. It
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REFERENCES 1. R. Turton. 1995. The
Page 201 and 202:
180 36. W. Kern and V. S. Ban, "Che
Page 203:
182 74. L. Imhoff, A. Bouteville, a
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