njit-etd2000-029 - New Jersey Institute of Technology

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13 is dominant. Presence of chlorine in the TiN films is a reliability threat and is likely to shorten the lifetime of an integrated circuit, because the metal alloy on the TiN film could be easily corroded by chlorine. All the current and potential applications of the B-N-C-H and Ti-N-Cl films depend on the film properties which further depends on the growth parameters. Hence, a study was initiated to investigate the influence of the process parameters on growth rate and film properties of LPCVD TiN. 1.1 Thin-Film Deposition Methods Thin-film deposition techniques have traditionally been used in the microelectronics industry for microchip coating, wear and corrosion resistance, and thermal protection. Deposition methods can be classified under two groups: Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD). 1.1.1 Physical Vapor Deposition Physical vapor deposition (PVD) is mainly focused into two categories, evaporation and sputtering. The objective of these deposition techniques is to controllably transfer atoms from a source to a substrate where film formation and growth proceed atomistically, without the need of a chemical reaction. In evaporation, atoms are removed from the source by thermal means, whereas in sputtering the atoms are dislodged from a solid target by the impact of gaseous ions. Advances in vacuum-pumping equipment and Joule heating sources spurred the emergence of PVD as a suitable industrial film deposition process. In general, the
14 properties of the film obtained by PVD are governed by the following: evaporation rate of the atoms, vapor pressure of the target materials, deposition geometry, temperature, pressure, and thermal history of the substrate28 . Traditionally, evaporation was the preferred PVD technique over sputtering. Higher deposition rates, better vacuum (thus cleaner environments for film formation and growth), and versatility in the fact that all classes of materials can apply were some of the reasons for the dominance of evaporation. The microelectronics revolution required the use of alloys with strict stoichiometric limits, which had to conformally cover and adhere well to substrate surfaces. This facilitated the need for the sputtering technique and so, as developments were made in radio frequency, bias, and magnetron variants, so were advances made in sputtering. The decision to use either technique depends solely on the desired application and has even spurred the development of hybrid techniques 28. A comparison of the two is given in Table 1.1.
Page 1 and 2: Copyright Warning & Restrictions Th
Page 3 and 4: ABSTRACT SYNTHESIS AND CHARACTERIZA
Page 5 and 6: SYNTHESIS AND CHARACTERIZATION OF L
Page 7 and 8: APPROVAL PAGE SYNTHESIS AND CHARACT
Page 9 and 10: This thesis is dedicated to my pare
Page 11 and 12: TABLE OF CONTENTS Chapter Page 1 IN
Page 13 and 14: TABLE OF CONTENTS (Continued) 2.6 A
Page 15 and 16: TABLE OF CONTENTS (Continued) Chapt
Page 17 and 18: LIST OF TABLES Table Page 1.1 Evapo
Page 19 and 20: LIST OF FIGURES (Continued) 4.2 Fil
Page 21 and 22: LIST OF FIGURES (Continued) 4.43 SE
Page 23 and 24: 2 of transistors on a chip would co
Page 25 and 26: 4 Typically, light beams do the etc
Page 27 and 28: Having the technology to transfer t
Page 29 and 30: 8 capacitance of the wire. It may s
Page 31 and 32: 10 side of the chip to the other. O
Page 33: metal/oxide/semiconductor integrate
Page 37 and 38: 16 Chemical vapor deposition is dis
Page 39 and 40: 18 Figure 1.1 Scheme to show the tr
Page 41 and 42: 20 the low-pressure operation. Dry
Page 43 and 44: 22 • Reaction: The surface cataly
Page 45 and 46: 24 If the deposition process is lim
Page 47 and 48: 26 1.2 Types of CVD Process As ment
Page 49 and 50: 28 Lowering the gas pressure by abo
Page 51 and 52: 30 purity and density, controllable
Page 53 and 54: 32 to block alkali ions. All films
Page 55 and 56: 34 Some of the attractive propertie
Page 57 and 58: 36 1.5 Refractory Materials Ceramic
Page 59 and 60: 38 deposited and then a conducting
Page 61 and 62: 40 Table 1.7 Physical properties of
Page 63 and 64: 42 In Chapter 2, a review of litera
Page 65 and 66: Material Melting Temperature (°C)
Page 67 and 68: 46 The reaction involving BCl 3 for
Page 69 and 70: 48 B2H6 + 2NH3 = 2BN + 6H2 Rand et
Page 71 and 72: 50 ammonia at 250° - 600°C in an
Page 73 and 74: 52 2.3.1 Synthesis by CVD and LPCVD
Page 75 and 76: 54 temperature range of 700-1300 K
Page 77 and 78: 56 The refractive index of c-BN was
Page 79 and 80: 58 the problem to hydrogen content
Page 81 and 82: 60 Many researchers 70,69,82 have s
Page 83 and 84: 62 BN film coatings are useful to i
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64 2.5.1 Dielectric Thin Films With
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66 A family of thermally stable, lo
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68 suggested that the there is a ch
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70 a heavily dependent on process c
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72 Typically thin beryllium or poly
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Figure 2.2 Trends in ULSI miniaturi
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76 Figure 2.3 Basic SCALPEL princip
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78 50 nanometers and smaller. The r
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80 A large number of materials have
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82 2.7 Aim and Scope of the Present
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84 jacket maintained the temperatur
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86 Figure 3.2 Schematic diagram of
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88 contamination and hence requires
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90 known reaction chamber volume. T
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92 all the experiments. The boat wa
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94 limited by sample surface and a
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96 3.5.6 Film Stress Stress develop
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98 3.5.7 X-Ray Diffraction (XRD) A
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100 where hγ , Eg(opt) and K 1 den
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102 technique. However the films we
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104 same film surface. Such measure
Page 127 and 128:
106 the device, an electrical conta
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108 Figure 3.5 Process flow diagram
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110 samples. The recombination-gene
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112 3.7.2 Characterization of B-N-C
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114 In all the experiments, films d
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116 operating in the mass transfer
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118 variation in the NH3/TEAB flow
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120 mode, and a small peak close to
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122 infrared absorption spectra, no
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124 increasing the NH3/TEAB flow ra
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126 tensile behavior with increase
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128 material with the electrons jum
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130 while at a constant temperature
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132 4.4.6 Electrical Characterizati
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134 4.4.6.2 Investigation of LPCVD
Page 157 and 158:
136 Figure 4.17 C-V curve shift alo
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138 Figure 4.18 Capacitance-Voltage
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140 Thus by knowing the refractive
Page 163 and 164:
142 rate of 40 sccm, as the Power w
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144 4.4.7.2 Characterization of B-N
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146 the reactant species in eq. 4.2
Page 169 and 170:
148 Figure 4.25 Variation of Film C
Page 171 and 172:
150 Figure 4.27 Plot of growth rate
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152 4.5.3 Rate Equation Knowing the
Page 175 and 176:
154 4.5.4 Reaction Mechanism In the
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156 high TiC14 coverage. ΘTiC13 ca
Page 179 and 180:
158 Figure 4.30 shows a typical XPS
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160 degraded. Hence, films with thi
Page 183 and 184:
162 Figure 4.35 Variation in film d
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164 Figure 4.37 Variation in film r
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166 emittance increased; the transm
Page 189 and 190:
Figure 4.41 SEM micrograph of TiN d
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Figure 4.4 3 SEM micrograph of TiN
Page 193 and 194:
172 Orientation (hid) Table 4.1 Com
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174 carried out under the same proc
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176 was not in a compound form. It
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REFERENCES 1. R. Turton. 1995. The
Page 201 and 202:
180 36. W. Kern and V. S. Ban, "Che
Page 203:
182 74. L. Imhoff, A. Bouteville, a
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