njit-etd2000-029 - New Jersey Institute of Technology

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3 flips the other way, with as many as one hundred computers for every person. It is estimated that by 2020, the era of ubiquitous computing should be in full flower. Beyond 2020, it is likely that the reign of silicon will end and entirely new computer architectures will have to be created. Computer analysts believe that this will lead to a fourth phase, the introduction of artificial intelligence into computing systems. From 2020 to 2050, the world of computers may well be dominated by invisible, networked computers having the power of artificial intelligence, reason, speech recognition, even common sense. "Longterm, the PC and workstation will wither because computing access will be everywhere: in the walls, on wrists, and in 'scrap computers' (like scrap paper) lying about to be grabbed as needed." — Mark Weiser, Xerox PARC. The drive towards invisibility of the PC may be a universal law of human behavior. As Weiser says: "Disappearance is a fundamental consequence not of technology but of human psychology. Whenever people learn something sufficiently well, they cease to be aware of it." Today transistors are made by using beams of light to make microscopic grooves and lines on silicon wafers (a process called "photolithography"). Computer experts today debate as to how many transistors can be crammed into a microprocessor by means of this etching process. The Motorola Power PC 620, for example has almost seven million transistors squeezed into silicon chips smaller than a postage stamp. This miniaturization process however cannot continue indefinitely. There is a limit to how many wires can be etched on a wafer. This limit is the result, in part, of the wavelength of the light beam.
4 Typically, light beams do the etching of silicon wafers from a mercury lamp, which have wavelengths measured in microns. Over the last few decades, Moore's law has been driven by using increasingly smaller and smaller wavelengths of mercury light to manufacture microprocessors. Mercury lamps emit light of wavelength 0.43 micron and 0.365 micron (ultraviolet). These distances are about 300 times thinner than a human hair. The technology that may dominate the first few years of this century, perhaps untill 2005, is based on the pulsed excimer laser, which can push the wavelength down to 0.193 micron (deep UV). But beyond 2020, this process will end and entirely new technologies will be required. In the past the increase in the number of devices on a chip has been almost totally due to constant improvements in the fabrication methods, enabling ever-smaller devices and more complex circuits to be constructed. Quite amazingly, amidst such a rapidly changing environment, the transistor itself has changed very little. Progress has been made simply be scaling down the dimensions of the individual devices and adjusting certain related properties accordingly. However several factors suggest that this approach may not be viable for much longer. If this trend is to continue into the twenty-first century, a replacement for the conventional semiconductor transistor must be found. There are several advantages of integration. The prime intention for this dramatic miniaturization has been an economic one. It costs little more to manufacture a chip containing one million components than it does to produce a single discrete device. In addition, the chip already contains the necessary interconnections between the
Page 1 and 2: Copyright Warning & Restrictions Th
Page 3 and 4: ABSTRACT SYNTHESIS AND CHARACTERIZA
Page 5 and 6: SYNTHESIS AND CHARACTERIZATION OF L
Page 7 and 8: APPROVAL PAGE SYNTHESIS AND CHARACT
Page 9 and 10: This thesis is dedicated to my pare
Page 11 and 12: TABLE OF CONTENTS Chapter Page 1 IN
Page 13 and 14: TABLE OF CONTENTS (Continued) 2.6 A
Page 15 and 16: TABLE OF CONTENTS (Continued) Chapt
Page 17 and 18: LIST OF TABLES Table Page 1.1 Evapo
Page 19 and 20: LIST OF FIGURES (Continued) 4.2 Fil
Page 21 and 22: LIST OF FIGURES (Continued) 4.43 SE
Page 23: 2 of transistors on a chip would co
Page 27 and 28: Having the technology to transfer t
Page 29 and 30: 8 capacitance of the wire. It may s
Page 31 and 32: 10 side of the chip to the other. O
Page 33 and 34: metal/oxide/semiconductor integrate
Page 35 and 36: 14 properties of the film obtained
Page 37 and 38: 16 Chemical vapor deposition is dis
Page 39 and 40: 18 Figure 1.1 Scheme to show the tr
Page 41 and 42: 20 the low-pressure operation. Dry
Page 43 and 44: 22 • Reaction: The surface cataly
Page 45 and 46: 24 If the deposition process is lim
Page 47 and 48: 26 1.2 Types of CVD Process As ment
Page 49 and 50: 28 Lowering the gas pressure by abo
Page 51 and 52: 30 purity and density, controllable
Page 53 and 54: 32 to block alkali ions. All films
Page 55 and 56: 34 Some of the attractive propertie
Page 57 and 58: 36 1.5 Refractory Materials Ceramic
Page 59 and 60: 38 deposited and then a conducting
Page 61 and 62: 40 Table 1.7 Physical properties of
Page 63 and 64: 42 In Chapter 2, a review of litera
Page 65 and 66: Material Melting Temperature (°C)
Page 67 and 68: 46 The reaction involving BCl 3 for
Page 69 and 70: 48 B2H6 + 2NH3 = 2BN + 6H2 Rand et
Page 71 and 72: 50 ammonia at 250° - 600°C in an
Page 73 and 74: 52 2.3.1 Synthesis by CVD and LPCVD
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54 temperature range of 700-1300 K
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56 The refractive index of c-BN was
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58 the problem to hydrogen content
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60 Many researchers 70,69,82 have s
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62 BN film coatings are useful to i
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64 2.5.1 Dielectric Thin Films With
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66 A family of thermally stable, lo
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68 suggested that the there is a ch
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70 a heavily dependent on process c
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72 Typically thin beryllium or poly
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Figure 2.2 Trends in ULSI miniaturi
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76 Figure 2.3 Basic SCALPEL princip
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78 50 nanometers and smaller. The r
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80 A large number of materials have
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82 2.7 Aim and Scope of the Present
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84 jacket maintained the temperatur
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86 Figure 3.2 Schematic diagram of
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88 contamination and hence requires
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90 known reaction chamber volume. T
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92 all the experiments. The boat wa
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94 limited by sample surface and a
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96 3.5.6 Film Stress Stress develop
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98 3.5.7 X-Ray Diffraction (XRD) A
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100 where hγ , Eg(opt) and K 1 den
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102 technique. However the films we
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104 same film surface. Such measure
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106 the device, an electrical conta
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108 Figure 3.5 Process flow diagram
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110 samples. The recombination-gene
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112 3.7.2 Characterization of B-N-C
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114 In all the experiments, films d
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116 operating in the mass transfer
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118 variation in the NH3/TEAB flow
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120 mode, and a small peak close to
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122 infrared absorption spectra, no
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124 increasing the NH3/TEAB flow ra
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126 tensile behavior with increase
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128 material with the electrons jum
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130 while at a constant temperature
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132 4.4.6 Electrical Characterizati
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134 4.4.6.2 Investigation of LPCVD
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136 Figure 4.17 C-V curve shift alo
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138 Figure 4.18 Capacitance-Voltage
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140 Thus by knowing the refractive
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142 rate of 40 sccm, as the Power w
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144 4.4.7.2 Characterization of B-N
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146 the reactant species in eq. 4.2
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148 Figure 4.25 Variation of Film C
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150 Figure 4.27 Plot of growth rate
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152 4.5.3 Rate Equation Knowing the
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154 4.5.4 Reaction Mechanism In the
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156 high TiC14 coverage. ΘTiC13 ca
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158 Figure 4.30 shows a typical XPS
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160 degraded. Hence, films with thi
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162 Figure 4.35 Variation in film d
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164 Figure 4.37 Variation in film r
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166 emittance increased; the transm
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Figure 4.41 SEM micrograph of TiN d
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Figure 4.4 3 SEM micrograph of TiN
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172 Orientation (hid) Table 4.1 Com
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174 carried out under the same proc
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176 was not in a compound form. It
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REFERENCES 1. R. Turton. 1995. The
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180 36. W. Kern and V. S. Ban, "Che
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182 74. L. Imhoff, A. Bouteville, a
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