njit-etd2000-029 - New Jersey Institute of Technology

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BIOGRAPHICAL SKETCH Author: Narahari Ramanuja Degree: Doctor of Philosophy in Materials Science and Engineering Date: May 2000 Undergraduate and Graduate Education: • Doctor of Philosophy in Materials Science & Engineering, New Jersey Institute of Technology, Newark, NJ, 2000 • Master of Science in Materials Science and Engineering, New Jersey Institute of Technology, Newark, NJ, 1998 • Bachelor of Engineering in Chemical Engineering, Rashtreeya Vidyalaya College of Engineering, Bangalore University, Bangalore, India, 1996 Publications and Presentations: N. Ramanuja, R. A. Levy, and S. N. Dharmadhikari, "Synthesis and Characterization of LPCVD Titanium Nitride Films Using TiCl 4 and NH3", Pending Publication in the Journal of Applied Physics. N. Ramanuja, M. Narayan, and R. A. Levy, "Characterization B-N-C-H Films Synthesized by LPCVD using NH 3 and TEAB", Pending Publication in the Journal of Electrochemical Society. N. Ramanuja, S. N. Dharmadhikari, R. A. Levy, and E. Ramos, Proc. International Symposium on Interconects and Contact Metallization for ULSI, Electrochemical Society, October 1999. N. Ramanuja, W. Lolertpiphop, E. Ramos and R. A. Levy, Proc. Second International Symposium on Environmental Issues with Materials and Processes for the Electronic and Semiconductor Industries, Electrochemical Society, Vol. 99-8, May 1999. iv
This thesis is dedicated to my parents and sister Mr. Narayanaswamy Ramanuja, Mrs. Pushpa Ramanuja, and Ms. Deepa Ramanuja v
Page 1 and 2: Copyright Warning & Restrictions Th
Page 3 and 4: ABSTRACT SYNTHESIS AND CHARACTERIZA
Page 5 and 6: SYNTHESIS AND CHARACTERIZATION OF L
Page 7: APPROVAL PAGE SYNTHESIS AND CHARACT
Page 11 and 12: TABLE OF CONTENTS Chapter Page 1 IN
Page 13 and 14: TABLE OF CONTENTS (Continued) 2.6 A
Page 15 and 16: TABLE OF CONTENTS (Continued) Chapt
Page 17 and 18: LIST OF TABLES Table Page 1.1 Evapo
Page 19 and 20: LIST OF FIGURES (Continued) 4.2 Fil
Page 21 and 22: LIST OF FIGURES (Continued) 4.43 SE
Page 23 and 24: 2 of transistors on a chip would co
Page 25 and 26: 4 Typically, light beams do the etc
Page 27 and 28: Having the technology to transfer t
Page 29 and 30: 8 capacitance of the wire. It may s
Page 31 and 32: 10 side of the chip to the other. O
Page 33 and 34: metal/oxide/semiconductor integrate
Page 35 and 36: 14 properties of the film obtained
Page 37 and 38: 16 Chemical vapor deposition is dis
Page 39 and 40: 18 Figure 1.1 Scheme to show the tr
Page 41 and 42: 20 the low-pressure operation. Dry
Page 43 and 44: 22 • Reaction: The surface cataly
Page 45 and 46: 24 If the deposition process is lim
Page 47 and 48: 26 1.2 Types of CVD Process As ment
Page 49 and 50: 28 Lowering the gas pressure by abo
Page 51 and 52: 30 purity and density, controllable
Page 53 and 54: 32 to block alkali ions. All films
Page 55 and 56: 34 Some of the attractive propertie
Page 57 and 58: 36 1.5 Refractory Materials Ceramic
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38 deposited and then a conducting
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40 Table 1.7 Physical properties of
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42 In Chapter 2, a review of litera
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Material Melting Temperature (°C)
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46 The reaction involving BCl 3 for
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48 B2H6 + 2NH3 = 2BN + 6H2 Rand et
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50 ammonia at 250° - 600°C in an
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52 2.3.1 Synthesis by CVD and LPCVD
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54 temperature range of 700-1300 K
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56 The refractive index of c-BN was
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58 the problem to hydrogen content
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60 Many researchers 70,69,82 have s
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62 BN film coatings are useful to i
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64 2.5.1 Dielectric Thin Films With
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66 A family of thermally stable, lo
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68 suggested that the there is a ch
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70 a heavily dependent on process c
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72 Typically thin beryllium or poly
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Figure 2.2 Trends in ULSI miniaturi
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76 Figure 2.3 Basic SCALPEL princip
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78 50 nanometers and smaller. The r
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80 A large number of materials have
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82 2.7 Aim and Scope of the Present
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84 jacket maintained the temperatur
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86 Figure 3.2 Schematic diagram of
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88 contamination and hence requires
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90 known reaction chamber volume. T
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92 all the experiments. The boat wa
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94 limited by sample surface and a
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96 3.5.6 Film Stress Stress develop
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98 3.5.7 X-Ray Diffraction (XRD) A
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100 where hγ , Eg(opt) and K 1 den
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102 technique. However the films we
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104 same film surface. Such measure
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106 the device, an electrical conta
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108 Figure 3.5 Process flow diagram
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110 samples. The recombination-gene
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112 3.7.2 Characterization of B-N-C
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114 In all the experiments, films d
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116 operating in the mass transfer
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118 variation in the NH3/TEAB flow
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120 mode, and a small peak close to
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122 infrared absorption spectra, no
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124 increasing the NH3/TEAB flow ra
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126 tensile behavior with increase
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128 material with the electrons jum
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130 while at a constant temperature
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132 4.4.6 Electrical Characterizati
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134 4.4.6.2 Investigation of LPCVD
Page 157 and 158:
136 Figure 4.17 C-V curve shift alo
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138 Figure 4.18 Capacitance-Voltage
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140 Thus by knowing the refractive
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142 rate of 40 sccm, as the Power w
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144 4.4.7.2 Characterization of B-N
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146 the reactant species in eq. 4.2
Page 169 and 170:
148 Figure 4.25 Variation of Film C
Page 171 and 172:
150 Figure 4.27 Plot of growth rate
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152 4.5.3 Rate Equation Knowing the
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154 4.5.4 Reaction Mechanism In the
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156 high TiC14 coverage. ΘTiC13 ca
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158 Figure 4.30 shows a typical XPS
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160 degraded. Hence, films with thi
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162 Figure 4.35 Variation in film d
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164 Figure 4.37 Variation in film r
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166 emittance increased; the transm
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Figure 4.41 SEM micrograph of TiN d
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Figure 4.4 3 SEM micrograph of TiN
Page 193 and 194:
172 Orientation (hid) Table 4.1 Com
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174 carried out under the same proc
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176 was not in a compound form. It
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REFERENCES 1. R. Turton. 1995. The
Page 201 and 202:
180 36. W. Kern and V. S. Ban, "Che
Page 203:
182 74. L. Imhoff, A. Bouteville, a
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