njit-etd2000-029 - New Jersey Institute of Technology

More documents

Recommendations

Info

TABLE OF CONTENTS (Continued) 1.4.5 Boron Triethylamine Complex as a Precursor 35 1.5 Refractory Materials 36 1.5.1 Application of Refractory Materials in VLSI 36 1.5.2 TiN as a Refractory Interconnect Material 38 1.5.3 Titanium tetrachloride and Ammonia as Precursors 41 1.6 Objectives of this Study 41 2 LITERATURE REVIEW OF BN AND TIN FILMS 43 2.1 Introduction 43 2.2 Deposition Techniques of Boron Nitride Thin Films 45 2.2.1 Synthesis by CVD Techniques 45 2.2.2 Synthesis by LPCVD Technique 49 2.3 Deposition Techniques of Titanium Nitride Thin Films 50 2.3.1 Synthesis by CVD and LPCVD Techniques 52 2.4 Properties of Boron Nitride and Titanium Nitride Films 54 2.5 Applications of CVD Boron Nitride 60 2.5.1 Dielectric Thin Films 64 2.5.1.1 Organic Fluorinated Dielectric Films 65 2.5.1.2 Fluorinated SiO 2 Dielectric Films 67 2.5.1.3 BN and SiBN Thin Films 68 2.5.2 Transparent Boron Carbon Nitrogen Thin Films 69 2.5.2.1 X-ray Windows 71 2.5.2.2 Next Generation Lithography (NGL) 73 viii
TABLE OF CONTENTS (Continued) 2.6 Applications of CVD Titanium Nitride 78 2.6.1 Refractory Metal Interconnects for VLSI 78 2.6.2 Diffusion Barriers 79 2.7 Aim and Scope of the Present Work 82 3 EXPERIMENTAL PROCEDURE 83 3.1 Introduction 83 3.2 LPCVD Reactor 83 3.2.1 Vapor Phase Flow Mechanism 86 3.3 Experimental Setup 88 3.3.1 Leakage Test 88 3.3.2 Calibration of Gas Flow System 88 3.3.3 Calibration of Vapor Phase Flow Controller 90 3.4 Deposition Procedure 91 3.5 Characterization of Boron Nitride and Titanium Nitride Films 93 3.5.1 Thickness 93 3.5.2 Growth Rate 94 3.5.3 Density 94 3.5.4 Refractive Index 95 3.5.5 Fourier Transform Infrared Spectroscopy 95 3.5.6 Film Stress 96 3.5.7 X-Ray Diffraction (XRD) 98 3.5.8 UV/Visible Spectroscopy 99 3.5.9 Hardness and Young's Modulus Measurements 100 ix
Page 1 and 2: Copyright Warning & Restrictions Th
Page 3 and 4: ABSTRACT SYNTHESIS AND CHARACTERIZA
Page 5 and 6: SYNTHESIS AND CHARACTERIZATION OF L
Page 7 and 8: APPROVAL PAGE SYNTHESIS AND CHARACT
Page 9 and 10: This thesis is dedicated to my pare
Page 11: TABLE OF CONTENTS Chapter Page 1 IN
Page 15 and 16: TABLE OF CONTENTS (Continued) Chapt
Page 17 and 18: LIST OF TABLES Table Page 1.1 Evapo
Page 19 and 20: LIST OF FIGURES (Continued) 4.2 Fil
Page 21 and 22: LIST OF FIGURES (Continued) 4.43 SE
Page 23 and 24: 2 of transistors on a chip would co
Page 25 and 26: 4 Typically, light beams do the etc
Page 27 and 28: Having the technology to transfer t
Page 29 and 30: 8 capacitance of the wire. It may s
Page 31 and 32: 10 side of the chip to the other. O
Page 33 and 34: metal/oxide/semiconductor integrate
Page 35 and 36: 14 properties of the film obtained
Page 37 and 38: 16 Chemical vapor deposition is dis
Page 39 and 40: 18 Figure 1.1 Scheme to show the tr
Page 41 and 42: 20 the low-pressure operation. Dry
Page 43 and 44: 22 • Reaction: The surface cataly
Page 45 and 46: 24 If the deposition process is lim
Page 47 and 48: 26 1.2 Types of CVD Process As ment
Page 49 and 50: 28 Lowering the gas pressure by abo
Page 51 and 52: 30 purity and density, controllable
Page 53 and 54: 32 to block alkali ions. All films
Page 55 and 56: 34 Some of the attractive propertie
Page 57 and 58: 36 1.5 Refractory Materials Ceramic
Page 59 and 60: 38 deposited and then a conducting
Page 61 and 62: 40 Table 1.7 Physical properties of
Page 63 and 64:
42 In Chapter 2, a review of litera
Page 65 and 66:
Material Melting Temperature (°C)
Page 67 and 68:
46 The reaction involving BCl 3 for
Page 69 and 70:
48 B2H6 + 2NH3 = 2BN + 6H2 Rand et
Page 71 and 72:
50 ammonia at 250° - 600°C in an
Page 73 and 74:
52 2.3.1 Synthesis by CVD and LPCVD
Page 75 and 76:
54 temperature range of 700-1300 K
Page 77 and 78:
56 The refractive index of c-BN was
Page 79 and 80:
58 the problem to hydrogen content
Page 81 and 82:
60 Many researchers 70,69,82 have s
Page 83 and 84:
62 BN film coatings are useful to i
Page 85 and 86:
64 2.5.1 Dielectric Thin Films With
Page 87 and 88:
66 A family of thermally stable, lo
Page 89 and 90:
68 suggested that the there is a ch
Page 91 and 92:
70 a heavily dependent on process c
Page 93 and 94:
72 Typically thin beryllium or poly
Page 95 and 96:
Figure 2.2 Trends in ULSI miniaturi
Page 97 and 98:
76 Figure 2.3 Basic SCALPEL princip
Page 99 and 100:
78 50 nanometers and smaller. The r
Page 101 and 102:
80 A large number of materials have
Page 103 and 104:
82 2.7 Aim and Scope of the Present
Page 105 and 106:
84 jacket maintained the temperatur
Page 107 and 108:
86 Figure 3.2 Schematic diagram of
Page 109 and 110:
88 contamination and hence requires
Page 111 and 112:
90 known reaction chamber volume. T
Page 113 and 114:
92 all the experiments. The boat wa
Page 115 and 116:
94 limited by sample surface and a
Page 117 and 118:
96 3.5.6 Film Stress Stress develop
Page 119 and 120:
98 3.5.7 X-Ray Diffraction (XRD) A
Page 121 and 122:
100 where hγ , Eg(opt) and K 1 den
Page 123 and 124:
102 technique. However the films we
Page 125 and 126:
104 same film surface. Such measure
Page 127 and 128:
106 the device, an electrical conta
Page 129 and 130:
108 Figure 3.5 Process flow diagram
Page 131 and 132:
110 samples. The recombination-gene
Page 133 and 134:
112 3.7.2 Characterization of B-N-C
Page 135 and 136:
114 In all the experiments, films d
Page 137 and 138:
116 operating in the mass transfer
Page 139 and 140:
118 variation in the NH3/TEAB flow
Page 141 and 142:
120 mode, and a small peak close to
Page 143 and 144:
122 infrared absorption spectra, no
Page 145 and 146:
124 increasing the NH3/TEAB flow ra
Page 147 and 148:
126 tensile behavior with increase
Page 149 and 150:
128 material with the electrons jum
Page 151 and 152:
130 while at a constant temperature
Page 153 and 154:
132 4.4.6 Electrical Characterizati
Page 155 and 156:
134 4.4.6.2 Investigation of LPCVD
Page 157 and 158:
136 Figure 4.17 C-V curve shift alo
Page 159 and 160:
138 Figure 4.18 Capacitance-Voltage
Page 161 and 162:
140 Thus by knowing the refractive
Page 163 and 164:
142 rate of 40 sccm, as the Power w
Page 165 and 166:
144 4.4.7.2 Characterization of B-N
Page 167 and 168:
146 the reactant species in eq. 4.2
Page 169 and 170:
148 Figure 4.25 Variation of Film C
Page 171 and 172:
150 Figure 4.27 Plot of growth rate
Page 173 and 174:
152 4.5.3 Rate Equation Knowing the
Page 175 and 176:
154 4.5.4 Reaction Mechanism In the
Page 177 and 178:
156 high TiC14 coverage. ΘTiC13 ca
Page 179 and 180:
158 Figure 4.30 shows a typical XPS
Page 181 and 182:
160 degraded. Hence, films with thi
Page 183 and 184:
162 Figure 4.35 Variation in film d
Page 185 and 186:
164 Figure 4.37 Variation in film r
Page 187 and 188:
166 emittance increased; the transm
Page 189 and 190:
Figure 4.41 SEM micrograph of TiN d
Page 191 and 192:
Figure 4.4 3 SEM micrograph of TiN
Page 193 and 194:
172 Orientation (hid) Table 4.1 Com
Page 195 and 196:
174 carried out under the same proc
Page 197 and 198:
176 was not in a compound form. It
Page 199 and 200:
REFERENCES 1. R. Turton. 1995. The
Page 201 and 202:
180 36. W. Kern and V. S. Ban, "Che
Page 203:
182 74. L. Imhoff, A. Bouteville, a
show all

njit-etd2000-029 - New Jersey Institute of Technology

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?