njit-etd2000-029 - New Jersey Institute of Technology

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TABLE OF CONTENTS (Continued) 3.5.10 X-Ray Photoelectron Spectroscopy ()CPS) 101 3.5.11 Auger Electron Spectroscopy (AES) 102 3.5.12 Scanning Electron Spectroscopy (SEM) 102 3.5.13 Rutherford Backscattering Spectrometry (RBS) 103 3.5.14 Resistivity 103 3.5.15 Emissivity 105 3.6 Electrical Characterization of BN Thin Films 105 3.6.1 Metallization of BN Films 105 3.6.2 Device Fabrication 107 3.6.3 Capacitance-Voltage and Current-Voltage Measurements 109 3.7 Free Standing B-N-C-H Membrane 110 3.7.1 Fabrication of Free Standing B-N-C-H Membranes 110 3.7.2 Characterization of B-N-C-H Free Standing Membranes 112 4 RESULTS AND DISCUSSION 113 4.1 Introduction 113 4.2 Kinetic Study of Boron Nitride Deposition by LPCVD 114 4.2.1 Influence of Temperature on the Deposition Rate and Film Composition 114 4.2.2 Influence of Reactant Flow ratio on the Deposition Rate and Film Composition 117 4.3 FTIR Spectroscopy and Auger Analysis of BN Thin Films 120 4.4 Properties of LPCVD BN Thin Films 122 4.4.1 Film Density 122 4.4.2 Refractive Index 123
TABLE OF CONTENTS (Continued) Chapter Page 4.4.3 Film Stress 125 4.4.4 Optical Properties 126 4.4.5 Structure Study 130 4.4.6 Electrical Characterization of BN Films 133 4.4.6.1 Dielectric Constant Measurements 133 4.4.6.2 Investigation of LPCVD BN-Si interfaces using MIS Structures 135 4.4.6.3 Current-Voltage (I-V) Characteristics of the Films 140 4.4.7 Boron Nitride X-Ray Masks and Windows 141 4.4.7.1 B-N-C-H X-Ray Window Fabrication 141 4.4.7.2 Characterization of B-N-C-H X-Ray Windows 144 4.5 Kinetic Study of LPCVD Titanium Nitride 145 4.5.1 Influence of Temperature on Deposition Rate 145 4.5.2 Influence of Reactant Partial Pressures on Deposition Rate 148 4.5.3 Rate Equation 152 4.5.4 Reaction Mechanism 154 4.6 Characterization Study 157 4.6.1 X-Ray Photoelectron Spectroscopy ()CPS) 157 4.6.2 Rutherford Backscattering Spectrometry (RBS) 159 4.7 Properties of LPCVD TiN Films 160 4.7.1 Color 160 4.7.2 Density 161 4.7.3 Film Stress 162 xi
Page 1 and 2: Copyright Warning & Restrictions Th
Page 3 and 4: ABSTRACT SYNTHESIS AND CHARACTERIZA
Page 5 and 6: SYNTHESIS AND CHARACTERIZATION OF L
Page 7 and 8: APPROVAL PAGE SYNTHESIS AND CHARACT
Page 9 and 10: This thesis is dedicated to my pare
Page 11 and 12: TABLE OF CONTENTS Chapter Page 1 IN
Page 13: TABLE OF CONTENTS (Continued) 2.6 A
Page 17 and 18: LIST OF TABLES Table Page 1.1 Evapo
Page 19 and 20: LIST OF FIGURES (Continued) 4.2 Fil
Page 21 and 22: LIST OF FIGURES (Continued) 4.43 SE
Page 23 and 24: 2 of transistors on a chip would co
Page 25 and 26: 4 Typically, light beams do the etc
Page 27 and 28: Having the technology to transfer t
Page 29 and 30: 8 capacitance of the wire. It may s
Page 31 and 32: 10 side of the chip to the other. O
Page 33 and 34: metal/oxide/semiconductor integrate
Page 35 and 36: 14 properties of the film obtained
Page 37 and 38: 16 Chemical vapor deposition is dis
Page 39 and 40: 18 Figure 1.1 Scheme to show the tr
Page 41 and 42: 20 the low-pressure operation. Dry
Page 43 and 44: 22 • Reaction: The surface cataly
Page 45 and 46: 24 If the deposition process is lim
Page 47 and 48: 26 1.2 Types of CVD Process As ment
Page 49 and 50: 28 Lowering the gas pressure by abo
Page 51 and 52: 30 purity and density, controllable
Page 53 and 54: 32 to block alkali ions. All films
Page 55 and 56: 34 Some of the attractive propertie
Page 57 and 58: 36 1.5 Refractory Materials Ceramic
Page 59 and 60: 38 deposited and then a conducting
Page 61 and 62: 40 Table 1.7 Physical properties of
Page 63 and 64: 42 In Chapter 2, a review of litera
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Material Melting Temperature (°C)
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46 The reaction involving BCl 3 for
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48 B2H6 + 2NH3 = 2BN + 6H2 Rand et
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50 ammonia at 250° - 600°C in an
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52 2.3.1 Synthesis by CVD and LPCVD
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54 temperature range of 700-1300 K
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56 The refractive index of c-BN was
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58 the problem to hydrogen content
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60 Many researchers 70,69,82 have s
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62 BN film coatings are useful to i
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64 2.5.1 Dielectric Thin Films With
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66 A family of thermally stable, lo
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68 suggested that the there is a ch
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70 a heavily dependent on process c
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72 Typically thin beryllium or poly
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Figure 2.2 Trends in ULSI miniaturi
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76 Figure 2.3 Basic SCALPEL princip
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78 50 nanometers and smaller. The r
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80 A large number of materials have
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82 2.7 Aim and Scope of the Present
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84 jacket maintained the temperatur
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86 Figure 3.2 Schematic diagram of
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88 contamination and hence requires
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90 known reaction chamber volume. T
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92 all the experiments. The boat wa
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94 limited by sample surface and a
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96 3.5.6 Film Stress Stress develop
Page 119 and 120:
98 3.5.7 X-Ray Diffraction (XRD) A
Page 121 and 122:
100 where hγ , Eg(opt) and K 1 den
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102 technique. However the films we
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104 same film surface. Such measure
Page 127 and 128:
106 the device, an electrical conta
Page 129 and 130:
108 Figure 3.5 Process flow diagram
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110 samples. The recombination-gene
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112 3.7.2 Characterization of B-N-C
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114 In all the experiments, films d
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116 operating in the mass transfer
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118 variation in the NH3/TEAB flow
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120 mode, and a small peak close to
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122 infrared absorption spectra, no
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124 increasing the NH3/TEAB flow ra
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126 tensile behavior with increase
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128 material with the electrons jum
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130 while at a constant temperature
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132 4.4.6 Electrical Characterizati
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134 4.4.6.2 Investigation of LPCVD
Page 157 and 158:
136 Figure 4.17 C-V curve shift alo
Page 159 and 160:
138 Figure 4.18 Capacitance-Voltage
Page 161 and 162:
140 Thus by knowing the refractive
Page 163 and 164:
142 rate of 40 sccm, as the Power w
Page 165 and 166:
144 4.4.7.2 Characterization of B-N
Page 167 and 168:
146 the reactant species in eq. 4.2
Page 169 and 170:
148 Figure 4.25 Variation of Film C
Page 171 and 172:
150 Figure 4.27 Plot of growth rate
Page 173 and 174:
152 4.5.3 Rate Equation Knowing the
Page 175 and 176:
154 4.5.4 Reaction Mechanism In the
Page 177 and 178:
156 high TiC14 coverage. ΘTiC13 ca
Page 179 and 180:
158 Figure 4.30 shows a typical XPS
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160 degraded. Hence, films with thi
Page 183 and 184:
162 Figure 4.35 Variation in film d
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164 Figure 4.37 Variation in film r
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166 emittance increased; the transm
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Figure 4.41 SEM micrograph of TiN d
Page 191 and 192:
Figure 4.4 3 SEM micrograph of TiN
Page 193 and 194:
172 Orientation (hid) Table 4.1 Com
Page 195 and 196:
174 carried out under the same proc
Page 197 and 198:
176 was not in a compound form. It
Page 199 and 200:
REFERENCES 1. R. Turton. 1995. The
Page 201 and 202:
180 36. W. Kern and V. S. Ban, "Che
Page 203:
182 74. L. Imhoff, A. Bouteville, a
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