2012-2016 Microsystem Technology Strategy and Roadmaps
2012-2016 Microsystem Technology Strategy and Roadmaps
2012-2016 Microsystem Technology Strategy and Roadmaps
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Integrated <strong>Microsystem</strong><br />
Architecture Attributes<br />
Design Methodology<br />
<strong>Technology</strong> for Devices,<br />
Structures <strong>and</strong><br />
Transducers (sensors<br />
<strong>and</strong> actuators)<br />
Test Methodology<br />
Legend: Arrows indicate continuing<br />
enhancement or new options.<br />
Infrastructure <strong>Technology</strong> Roadmap 2009<br />
Footprint: 10 cm 3 (includes folded PCB)<br />
Footprint: 1 cm 3<br />
Stack: 5 layers, boards 2 (accelerometer, temp) .. Add-in sensor options … 8 <br />
Stack: TSV devices<br />
Power: mW<br />
Hours/days .. Operating time … Years/indefinite <br />
Power: nW<br />
RF centre: 430MHz, 870MHz, 2.5GHz <br />
passive, COTS, chip-scale … Antenna …active, tunable, monolithically integrated <br />
Programmability: small footprint<br />
flash, register setup<br />
Mixed-signal FPGA<br />
Programmability: SDR,<br />
reconfigurable hardware<br />
Kit: digital <br />
Design-for-assembly (flow)<br />
Kit: analog St<strong>and</strong>ard, scalable system High-speed clock <strong>and</strong> data Interfaces optimised for Condition telemetry<br />
Kit: RF <br />
driver <strong>and</strong> test interface recovery modules bench-top multi-sensor (hardware, software)<br />
Kit: MEMS <br />
system prototyping<br />
Kit: microfluidics <br />
Kit: real-time operations <br />
Communications protocol stack tools<br />
Kit: Multi-tech prototyping flow <br />
Multi-processor debug <br />
Code parallelization tools <br />
Simulation: co-simulation methods <strong>and</strong> portfolio of point simulators on-dem<strong>and</strong> <br />
Power: battery Power: scavenging Power: PV/solar Power: scavenging/implantable<br />
CMOS: 800nm to 45nm <br />
CMOS: 32nm<br />
GaN: 0.8µm Ft~ 20GHz <br />
GaN: 0.4µm Ft~ 60GHz GaN: Ft~ 125GHz<br />
Photonic crystals/SOI III-V Qdot lasers III-V Qwell intermixing Photonics/GaN III-V Qcascade structures<br />
MEMS <br />
Microfluidics <br />
Si-photonics<br />
Si-fluidics Si-other enhancements <br />
SiC substrate technologies <br />
Nanotechnology region epi lift-off<br />
Coatings: inorganic Coatings: organic<br />
Coatings: bio-compatible<br />
Interposer: embedded passives<br />
SIP test interface<br />
Interposer: embedded active<br />
Substrate: LTCC<br />
Substrate: RF signal Substrate: RF+<br />
Substrate: photonic+<br />
optimised<br />
microfluidic optimised microfluidic optimised<br />
Fixturing/assembly: small footprint optics <br />
Fixturing: microfluidics <br />
Fixturing: 600MHz digital<br />
Fixturing: multi-technology <br />
Fixturing: photonics <br />
Nano-scale wire interconnect<br />
MEMS<br />
resonator<br />
Near IR λ test<br />
MEMS test module<br />
(optical, 20 KHz)<br />
Visible λ test<br />
Portable environmental<br />
test chambers<br />
100 Ghz Telecom test<br />
100 GHz BERT<br />
THz component test<br />
Instrument signal sensitivity<br />
on femto-scale<br />
Embedded software<br />
debug <strong>and</strong> on-line lab.<br />
New baseline instrumentation<br />
cage <strong>and</strong> racked instruments<br />
Extend rack options for select<br />
technologies (photonics/microfluidics)<br />
2009 2010 2011<br />
<strong>2012</strong> 2013<br />
2014<br />
Roadmap Period of Interest: April 2009 to March 2015<br />
© <strong>2012</strong> CMC <strong>Microsystem</strong>s 20
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