Diode Reverse Recovery and its Effect on Switching Losses
Diode Reverse Recovery and its Effect on Switching Losses
Diode Reverse Recovery and its Effect on Switching Losses
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<strong>Switching</strong> <strong>Losses</strong> vs. Voltage: E ON <str<strong>on</strong>g>and</str<strong>on</strong>g> E OFF losses<br />
E<strong>on</strong> <str<strong>on</strong>g>and</str<strong>on</strong>g> Eoff losses of the FET - FQP9N50C vs. Input Voltage<br />
E<strong>on</strong> <str<strong>on</strong>g>and</str<strong>on</strong>g> Eoff <strong>Losses</strong> [uJ]<br />
50<br />
45<br />
40<br />
35<br />
30<br />
25<br />
20<br />
15<br />
Comparis<strong>on</strong> of<br />
two Stealth diodes,<br />
which are optimized for<br />
hard switching<br />
E<strong>on</strong> @ ISL9R1560<br />
Eoff @ ISL9R1560<br />
E<strong>on</strong> @ ISL9R460<br />
Eoff @ ISL9R460<br />
10<br />
5<br />
0<br />
0 50 100 150 200 250 300 350<br />
Input Voltage [V]<br />
Higher Current rating of the <str<strong>on</strong>g>Diode</str<strong>on</strong>g> will increase<br />
E<strong>on</strong>, but decrease Eoff (<str<strong>on</strong>g>Diode</str<strong>on</strong>g> capacitance acts as<br />
a snubber). E<strong>on</strong> is dominating!<br />
16<br />
FQP9N50C
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