Diode Reverse Recovery and its Effect on Switching Losses
Diode Reverse Recovery and its Effect on Switching Losses
Diode Reverse Recovery and its Effect on Switching Losses
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E ON = f (Ice) <str<strong>on</strong>g>and</str<strong>on</strong>g> E OFF = f (Ice) for different diode<br />
technologies <str<strong>on</strong>g>and</str<strong>on</strong>g> ratings<br />
200<br />
E<strong>on</strong> <str<strong>on</strong>g>and</str<strong>on</strong>g> Eoff losses of the FET - FQP9N50C vs. Current<br />
180<br />
E<strong>on</strong> <str<strong>on</strong>g>and</str<strong>on</strong>g> Eoff <strong>Losses</strong> [uJ]<br />
160<br />
140<br />
120<br />
100<br />
80<br />
60<br />
40<br />
E<strong>on</strong> @FCP11N60F<br />
E<strong>on</strong> @ FQPF5N50CF<br />
E<strong>on</strong> @ RURD660<br />
E<strong>on</strong> @ RHRP860<br />
E<strong>on</strong> @ ISL9R460<br />
Eoff @ ISL9R460<br />
FQP9N50C<br />
20<br />
0<br />
0 1 2 3 4 5 6 7<br />
Current [A]<br />
Technologies as well as rating will have a big<br />
impact <strong>on</strong> the E<strong>on</strong> losses. Fast recovery FETs will<br />
lead to significant higher E<strong>on</strong> losses compared to<br />
single diode technologies. => Sometimes the<br />
reas<strong>on</strong> for external fast recovery diodes.<br />
18
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