Diode Reverse Recovery and its Effect on Switching Losses

More documents

Recommendations

Info

E ON Losses at Hard Switching with different <strong>Diode</strong> Technology @ V IN = 300V @ I = 4A MUR1560; E ON = 77.7uJ RURD660; E ON = 60.1uJ RHRP860; E ON = 37.9uJ ISL9R1560; E ON = 42.9uJ ISL9R860; E ON = 33.1uJ ISL9R460; E ON = 32.3uJ 20
Variation of the E ON Losses with input voltage for different diode technologies <strong>and</strong> ratings Eon Losses [uJ] 90 80 70 60 50 40 30 20 Eon losses of the FET - FQP9N50C vs. Input Voltage Eon @ MUR1560 Eon @ RURP860 Eon @ RURD660 Eon @ FFPF10UP60 Eon @ ISL9R1560 Eon @ RHRP860 Eon @ ISL9R860 Eon @ ISL9R460 Eon @ SIC 6A 10 0 0 50 100 150 200 250 300 350 Input Voltage [V] Especially in hard switching applications the diode technology will have a significant impact on the Eon losses of the switch. FQP9N50C 21
Page 1 and 2: Diode Reve
Page 3 and 4: Diode charge distr
Page 5 and 6: Switching loss calculations • Def
Page 7 and 8: Turn On Loss Due to Diode</
Page 9 and 10: Double check of the formulas: Eon c
Page 11 and 12: 8A Stealth II versus Stealth compar
Page 13 and 14: Test circuits Ids
Page 15 and 16: Switching Losses vs. Voltage FQP9N5
Page 17 and 18: Switching Losses vs. Current FQP9N5
Page 19: Variation of I RRM with load curren
Page 23 and 24: Effect of temperat
Page 25 and 26: Switching Losses @ increasing switc
Page 27 and 28: Variation of I RRM with dI/dt for d
Page 29 and 30: Effect of parallel
Page 31: Summary ‣ Reverse</strong

Diode Reverse Recovery and its Effect on Switching Losses

Create successful ePaper yourself

Delete template?

Save as template?