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Diode Reverse Recovery and its Effect on Switching Losses

Diode Reverse Recovery and its Effect on Switching Losses

Diode Reverse Recovery and its Effect on Switching Losses

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Turn On Loss Due to <str<strong>on</strong>g>Diode</str<strong>on</strong>g> <str<strong>on</strong>g>Recovery</str<strong>on</strong>g> (Phase t R )<br />

V CE<br />

t = t 0<br />

IGBT turns <strong>on</strong><br />

o<br />

dI C /dt<br />

dI F /dt<br />

t 0<br />

I C<br />

t A<br />

t B<br />

t F<br />

I RRM<br />

V F<br />

I F<br />

V RM<br />

I RRM<br />

t R<br />

t 1 t 2 t 3<br />

I L assumed c<strong>on</strong>stant during switching time<br />

with<br />

V out I L t<br />

E <strong>on</strong>1<br />

= * *<br />

2<br />

dI/dt = I L / t R<br />

2<br />

Vout<br />

I L<br />

E <strong>on</strong>1<br />

= *<br />

2 * dI/dt<br />

switching time: t R<br />

+t A<br />

+t B<br />

R<br />

6

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