Diode Reverse Recovery and its Effect on Switching Losses
Diode Reverse Recovery and its Effect on Switching Losses
Diode Reverse Recovery and its Effect on Switching Losses
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Variati<strong>on</strong> of E ON losses with di/dt for different diode<br />
technologies<br />
E<strong>on</strong> losses of the FET vs. dI/dt @ V = 300V @ dI/dt = 4A<br />
35<br />
30<br />
25<br />
E<strong>on</strong> <strong>Losses</strong> [uJ]<br />
20<br />
15<br />
E<strong>on</strong> @ FFP08H60S<br />
E<strong>on</strong> @ ISL9R860<br />
E<strong>on</strong> @ ISL9R460<br />
10<br />
5<br />
0<br />
0 200 400 600 800 1000 1200 1400 1600<br />
dI/dt [A/us]<br />
A higher dI/dt will decrease the E<strong>on</strong> losses.<br />
28
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