Diode Reverse Recovery and its Effect on Switching Losses

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Switching Losses @ increasing switching speed • Switching off: Same FET <strong>and</strong> <strong>Diode</strong>, reducing Rg: E OFF = 22.8uJ 16.7uJ Drawback: ringing due to parasitic Ind. & Caps All measurements: FDD6N50 + ISL9R460, U = 300V, I = 4A Recommended Rg Good switching performance, no ringing Low Rg Bad switching performance, ringing, but lower E OFF 24
Switching Losses @ increasing switching speed - Same MOSFET, different Rg - <strong>Diode</strong> = ISL9R460, U = 300V, I = 4A FDD6N50, Rg = 10 Ohm E ON = 8 uJ dI/dt = 1400A/us I RRM = 6.2A Right : FDD6N50, Rg = 3 Ohm E ON = 4 uJ dI/dt = 1600A/us I RRM = 7.4A 25
Page 1 and 2: Diode Reve
Page 3 and 4: Diode charge distr
Page 5 and 6: Switching loss calculations • Def
Page 7 and 8: Turn On Loss Due to Diode</
Page 9 and 10: Double check of the formulas: Eon c
Page 11 and 12: 8A Stealth II versus Stealth compar
Page 13 and 14: Test circuits Ids
Page 15 and 16: Switching Losses vs. Voltage FQP9N5
Page 17 and 18: Switching Losses vs. Current FQP9N5
Page 19 and 20: Variation of I RRM with load curren
Page 21 and 22: Variation of the E ON Losses with i
Page 23: Effect of temperat
Page 27 and 28: Variation of I RRM with dI/dt for d
Page 29 and 30: Effect of parallel
Page 31: Summary ‣ Reverse</strong

Diode Reverse Recovery and its Effect on Switching Losses

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